A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.

An object of the present invention is to provide a cut sheet-like piezoelectric film which includes electrode layers on both surfaces of a piezoelectric layer and is capable of preventing a short circuit of the electrode layers. The object is achieved by providing a cut sheet-like piezoelectric film including a piezoelectric layer which contains piezoelectric particles in a matrix containing a polymer material, and electrode layers which are provided on both surfaces of the piezoelectric layer, in which a distance between the electrode layers at an end portion in a thickness direction is 40% or greater with respect to a thickness of the piezoelectric layer.

There is provided a piezoelectric composite comprising a piezoelectric polymer and particles of a filler dispersed in the polymer, wherein the filler is in micro or nanoparticle form and is present in a filler:polymer weight ratio between about 1:99 and about 95:5. There is also provided an ink and ink cartridge for 3D printing of the piezoelectric composite. There is also provided a piezoelectric 3D printed material comprising the piezoelectric composite and a bifunctional material comprising the piezoelectric composite with one or more conductive electrodes adjacent to the piezoelectric composite. Methods of manufacture and uses thereof are also provided, including methods for 3D printing of a piezoelectric 3D printed material via solvent-cast or FDM 3D printing starting from the piezoelectric composite and/or the ink.

A current introduction terminal includes a board made of resin. The board has a first face and a second face opposite each other. The board hermetically separates environments of different air pressures from each other. A plurality of through via holes corresponding both to a plurality of metal terminals of a first surface-mount connector to be mounted on the first face and to a plurality of metal terminals of a second surface-mount connector to be mounted on the second face are formed to penetrate between the first and second faces, and then hole parts of the through via holes are filled with resin.

Doped-aluminum nitride (doped-AlN) films and methods of manufacturing doped-AlN films are disclosed. Some methods comprise forming alternating pinning layers and doped-AlN layers including a dopant selected from the group consisting of Sc, Y, Hf, Mg, Zr and Cr, wherein the pinning layers pin the doped-AlN layers to a c-axis orientation. Some methods include forming a conducting layer including a material selected from the group consisting of Mo, Pt, Ta, Ru, LaNiO.sub.3 and SrRuO.sub.3. Some methods include forming a thermal oxide layer having silicon oxide on a silicon substrate. Piezoelectric devices comprising the doped-AlN film are also disclosed.

[Object]

An object of the present invention is to provide a method for manufacturing an oxide single crystal substrate having less dispersion in characteristics within the substrate surface.

[Means to solve the Problems]

In the manufacture method of the present invention, a powder containing a Li compound is dispersed in a medium to form a slurry, and heat is applied while the slurry is in contact with the surface of the oxide single crystal substrate, so as to diffuse Li into the substrate from the surface thereof to effect a modification of the substrate; or after the slurry is brought into contact with the surface of the oxide single crystal substrate, the oxide single crystal substrate is buried in a powder containing the Li compound, and heat is applied to effect the diffusion of Li in the substrate from the surface thereof whereby a modification of the substrate occurs.

Provided are a polymer composite piezoelectric body in which the conversion efficiency between electricity and sound is increased and thus the sound pressure level is improved, an electroacoustic transduction film, and an electroacoustic transducer. The polymer composite piezoelectric body includes a viscoelastic matrix formed of a polymer material having a cyanoethyl group, piezoelectric body particles which are dispersed in the viscoelastic matrix and have an average particle diameter of more than or equal to 2.5 μm, and dielectric particles dispersed in the viscoelastic matrix, in which the dielectric particles are formed of a material different from that of the piezoelectric body particles and have an average particle diameter of less than or equal to 0.5 μm and a relative permittivity of more than or equal to 80.

A quartz crystal microbalance (QCM) sensor includes a crystal plate, a buffer layer, and an electrode. The crystal plate has a first surface and a second surface. The second surface is opposite the first surface. The buffer layer includes a first buffer layer and a second buffer layer. The first buffer layer is disposed on the first surface of the crystal plate. the second buffer layer is disposed on the second surface of the crystal plate. The electrode includes a first electrode and a second electrode. The first electrode is disposed on the first buffer layer. The second electrode is disposed on the second buffer layer. The electrode includes at least one of titanium, scandium, beryllium, cobalt, yttrium, zirconium, technetium, ruthenium, lanthanum, cerium, praseodymium, neodymium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, lutetium, hafnium, rhenium, osmium, americium, curium, berkelium, and californium.

A piezoelectric element includes, on a base, an underlying layer for controlling crystallinity of a piezoelectric layer, and the piezoelectric layer. The piezoelectric layer includes a crystal with an ABO.sub.3-type structure having at least Pb at A sites. In the underlying layer, an interface-with-the-base side is configured including at least Pb and another substance with a different composition rate from that of the piezoelectric layer at the A sites, and a substance with a different composition ratio from that of the piezoelectric layer at B sites. In a layer above the interface-with-the-base side in the underlying layer, the composition rate of the other substance included at the A sites of the underlying layer progressively changes and also the composition ratio of the substance included at the B sites progressively changes, from the interface-with-the-base side toward the interface-with-the-piezoelectric-layer side to approach the composition of the piezoelectric layer.

A structure of an integrated crystal oscillator package has a first quartz crystal resonator, a second quartz crystal resonator, and application-specific integrated circuit chip (ASIC) combined in a package. The ASIC has a switch control for receiving audio formats of 44.1 kHz and 48 kHz with different hi-fidelity (hi-fi). The first quartz crystal resonator has a first clock rate corresponding to the 44.1 kHz frequency and the second quartz crystal resonator has a second clock rate corresponding to the 48 kHz frequency to be switched by the present invention in operation.