A stacked type image sensor including color separation elements, and an image pickup apparatus including the stacked type image sensor, are provided. The stacked type image sensor includes a first light sensing layer including first pixels configured to absorb and detect light of a first wavelength band and transmit light of a second wavelength band and a third wavelength band, and a second light sensing layer disposed to face the first light sensing layer, the second light sensing layer including second pixels configured to detect light of the second wavelength band and third pixels configured to detect light of the third wavelength band. The color separation elements are disposed between the first light sensing layer and the second light sensing layer, and are configured to direct the light of the second wavelength band toward the second pixels, and direct the light of the third wavelength band toward the third pixels.

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

A semiconductor device of the present disclosure includes: a semiconductor element disposed on a first surface side of a semiconductor substrate; a through-electrode that is provided through the semiconductor substrate in a thickness direction of the semiconductor substrate and introduces charge obtained in the semiconductor element to a second surface side of the semiconductor substrate; and an amplifier transistor that outputs an electrical signal based on the charge introduced by the through-electrode, the amplifier transistor using the through-electrode as a gate electrode and including a source region and a drain region around the through-electrode.

An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13.sub.C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13.sub.B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

An image sensor includes a plurality of pixels including a blue pixel, a green pixel, and a red pixel. At least a portion of the plurality of pixels includes a first photo-sensing device including a first perovskite which absorbs at least a portion of light in a visible light wavelength spectrum, and a second photo-sensing device which is stacked with the first photo-sensing device and senses at least a portion of light in an infrared wavelength spectrum.

A solid-state imaging device includes: a first electrode, supplied with a fixed voltage, partially surrounding a periphery of a first pixel; a charge transfer layer, transferring electric charge, disposed at least in a region opposed to the first electrode and corresponding to the first pixel; a photoelectric conversion layer, converting light into electric charge, disposed on the charge transfer layer oppositely to the first electrode; an electrode disposed on the photoelectric conversion layer oppositely to the charge transfer layer and supplying a voltage thereto; first and second accumulation electrodes each accumulating electric charge in the charge transfer layer and disposed to be spaced apart on the charge transfer layer oppositely to the photoelectric conversion layer in a region corresponding to the first pixel; and a first control electrode disposed between the first and second accumulation electrodes and transferring one of electric charge accumulated by the first and second accumulation electrodes.

According to an aspect, a detection device includes: a light source configured to emit light that includes a first wavelength band and a second wavelength band; a first color filter configured to transmit light in the first wavelength band; a second color filter configured to transmit light in the second wavelength band; a first photodiode configured to receive light transmitted through the first color filter; and a second photodiode configured to receive light transmitted through the second color filter.