Disclosed is a method of manufacturing a III-V group nanorod solar cell so that a substrate can be reused. The method may includes a first growth process of forming an etch stop layer on a substrate, a second growth process of growing a sacrificial layer on the etch stop layer, a third growth process of forming, on the sacrificial layer, a pattern layer including an opening at each location at which each nanorod solar cell is able to be grown, a fourth growth process of growing the nanorod solar cells on the sacrificial layer through the openings within the pattern layer, a forming process of forming a solar cell protection layer on outsides of the nanorod solar cells, a first etching process of etching the sacrificial layer and the pattern layer, and a second etching process of etching the etch stop layer.

A slot-die type gas distribution device for photovoltaic manufacturing is provided. The slot-die type gas distribution device includes a first gas distribution device (105) at a process chamber inlet (104) and a second gas distribution device (13) at a process chamber outlet (11). The first gas distribution device (105) is connected to the process chamber inlet (104) through a flat quadrangular first communication device (9), and the second gas distribution device (13) is connected to the process chamber outlet (11) through a flat quadrangular third communication device (12). The device effectively improves the gas distribution uniformity in the process chamber.

Method for forming a semiconductor structure includes: providing a first substrate including a first surface and second surface opposite to each other, where the first substrate includes first ions with a first concentration; forming a first epitaxial layer on the first surface of the first substrate, where the first epitaxial layer includes second ions with a second concentration smaller than the first concentration; forming a second epitaxial layer on the first epitaxial layer and a third epitaxial layer located on the second epitaxial layer, where the second epitaxial layer includes third ions with a third concentration and the third epitaxial layer includes fourth ions with a fourth concentration smaller than the third concentration; and thinning the first substrate from the second surface of the first substrate until the surface of the second epitaxial layer is exposed.