High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

An optoelectronic component (100) comprises an optoelectronic semiconductor chip (10), a first contact area (31) and a second contact area (32), which is laterally offset with respect to the first contact area and is electrically insulated therefrom, and a housing element (40). The first contact area (31) is electrically conductively connected to the first semiconductor layer (21) and the second contact area (32) is electrically conductively connected to the second semiconductor layer (22) of the optoelectronic semiconductor chip. The first contact area (31) and the second contact area (32) project beyond the optoelectronic semiconductor chip laterally in each case. The housing element (40) is fixed to the first contact area (31) and the second contact area (32) in regions in which the first contact area (31) and the second contact area (32) project beyond the optoelectronic semiconductor chip laterally in each case. The housing element surrounds the optoelectronic semiconductor chip at least partly. A surface of the housing element that faces the optoelectronic semiconductor chip is embodied as reflective at least in partial regions. A wall of the housing element has a cutout (61).

A method for producing a semiconductor layer sequence is disclosed. In an embodiment the includes growing a first nitridic semiconductor layer at the growth side of a growth substrate, growing a second nitridic semiconductor layer having at least one opening on the first nitridic semiconductor layer, removing at least pail of the first nitridic semiconductor layer through the at least one opening in the second nitridic semiconductor layer, growing a third nitridic semiconductor layer on the second nitridic semiconductor layer, wherein the third nitridic semiconductor layer covers the at least one opening at least in places in such a way that at least one cavity free of a semiconductor material is present between the growth substrate and a subsequent semiconductor layers and removing the growth substrate.

The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.

Provided is a high-performance infrared optical device including a reflecting layer structure that can be widely used in the mid-infrared region. An infrared optical device that has a light emission/reception property of having a peak at a center wavelength comprises: a semiconductor substrate; and a thin film laminate portion including a first reflecting layer formed on the semiconductor substrate, a lower semiconductor layer of a first conductivity type, a light emitting/receiving layer, an upper semiconductor layer of a second conductivity type, and a second reflecting layer in the stated order, wherein the first reflecting layer has a constituent material made of AlGaInAsSb where 0Al+Ga0.5 and 0As1.0, and includes a plurality of layers that differ in impurity concentration, and the center wavelength is 2.5 m or more at room temperature.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.

Provided are a semiconductor material based on metal nanowires and a porous nitride, and a preparation method thereof. The semiconductor material includes: a substrate; a buffer layer formed on the substrate; and a composite material layer formed on the buffer layer the composite material layer includes: a transverse porous nitride template layer; and a plurality of metal nanowires filled in pores of the transverse porous nitride template layer.

Methods and apparatus for processing a photonic device are provided herein. For example, methods include etching, using a plasma etch process that uses a first gas, a first epitaxial layer of material of the photonic device comprising a base layer comprising at least one of silicon, germanium, sapphire, aluminum indium gallium arsenide (Al.sub.xIn.sub.yGa.sub.1-x-yAs), aluminum indium gallium phosphide (Al.sub.xIn.sub.yGa.sub.1-x-yP), aluminum indium gallium nitride (Al.sub.xIn.sub.yGa.sub.1-x-yN), aluminum indium gallium arsenide phosphide (Al.sub.xIn.sub.yGa.sub.1-x-yAs.sub.zP.sub.1-z), depositing, using a plasma deposition process that uses a second gas different from the first gas, a first dielectric layer over etched sidewalls of the first epitaxial layer of material, etching, using the first gas, a second epitaxial layer of material of the photonic device, and depositing, using the second gas, a second dielectric layer over etched sidewalls of the second epitaxial layer of material.

The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded Al.sub.yGa.sub.1-yN layer, and an undoped N-polar plane Al.sub.xGa.sub.1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiN.sub.z passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector' in the UV solar-blind band.