The present disclosure provides a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.

The present disclosure provides a solar cell and a method of producing a solar cell. The solar cell comprises a silicon substrate; a tunneling layer and a polysilicon layer successively formed on a backside of the silicon substrate; a dielectric layer formed on a backside of the polysilicon layer; a first electrode and a second electrode, the first electrode and the second electrode penetrate the dielectric layer and are in contact with the polysilicon layer; a first doped region and a second doped region, the first doped region starts from the first electrode and extends to an inside of the silicon substrate, and the second doped region starts from the second electrode and extends to the inside of the silicon substrate; and an isolation groove located between the first doped region and the second doped region, and the isolation groove deeps into the polysilicon layer at least as deep as a predetermined depth.

In one aspect, a preparation method for a solar cell includes: providing a silicon wafer substrate having a first surface and a second surface opposite to the first surface; forming a silicon-containing film on the first surface of the silicon wafer substrate; patterning the silicon-containing film on the first surface by laser to form a patterned region; placing the silicon wafer substrate having the silicon-containing film and the patterned region into an alkaline solution containing a strong monobasic base to obtain a pre-treated silicon wafer substrate, and placing the pre-treated silicon wafer substrate into a texturing liquid containing a strong monobasic base for texturing treatment, wherein a concentration of the strong monobasic base in the alkaline solution is greater than a concentration of the strong monobasic base in the texturing liquid.

In one aspect, a preparation method for a solar cell includes: providing a silicon wafer substrate having a first surface and a second surface opposite to the first surface; forming a silicon-containing film on the first surface of the silicon wafer substrate; patterning the silicon-containing film on the first surface by laser to form a patterned region; placing the silicon wafer substrate having the silicon-containing film and the patterned region into an alkaline solution containing a strong monobasic base to obtain a pre-treated silicon wafer substrate, and placing the pre-treated silicon wafer substrate into a texturing liquid containing a strong monobasic base for texturing treatment, wherein a concentration of the strong monobasic base in the alkaline solution is greater than a concentration of the strong monobasic base in the texturing liquid.

In an aspect, an ambient light energy harvesting device includes a semiconductor structure constituting at least a first diode of the ambient light energy harvesting device. The semiconductor structure includes a substrate portion of a first doping type, a first plurality of doped regions of the first doping type over the substrate portion, and a second plurality of doped regions of a second doping type over the substrate portion. The first plurality of doped regions and the second plurality of doped regions are arranged in an alternating manner along a lateral direction.

Disclosed are a solar cell and a photovoltaic module. The solar cell includes a substrate and a doped semiconductor layer disposed on the substrate. The solar cell further includes holes distributed across an edge region of the doped semiconductor layer, and a respective hole of the holes extending through at least the doped semiconductor layer and being filled with a passivation material. The solar cell further includes a passivation layer formed on a side of the doped semiconductor layer away from the substrate, and a plurality of electrodes arranged at intervals along a first direction, extending through the passivation layer and in electrical contact with the doped semiconductor layer.

A single crystal silicon wafer has a thickness between a first surface and an opposite second surface from 50 m to 300 m. The wafer includes a first region extending a first depth from the first surface. The first region has a reduced oxygen concentration relative to an adjacent region of the wafer. The wafer has a bulk minority carrier lifetime greater than 100 s.

In one aspect, a manufacturing method for a solar cell includes the following steps: providing a solar cell substrate, the solar cell substrate comprising a region A on which a first processing needs to be performed and a region B on which the first processing does not need to be performed; and forming on the region B a phosphorus-boron co-doped silicon oxide layer; and performing the first processing on the region A, the first processing comprising one or more of texturing processing, etching processing and wrapping-plating removal processing.

In one aspect, a manufacturing method for a solar cell includes the following steps: providing a solar cell substrate, the solar cell substrate comprising a region A on which a first processing needs to be performed and a region B on which the first processing does not need to be performed; and forming on the region B a phosphorus-boron co-doped silicon oxide layer; and performing the first processing on the region A, the first processing comprising one or more of texturing processing, etching processing and wrapping-plating removal processing.

The present disclosure provides a method of manufacturing a light detecting device. The light detecting devices includes an insulating layer, a silicon layer, a light detecting layer, N first doped regions and M second doped regions. The silicon layer is disposed over the insulating layer. The light detecting layer is disposed over the silicon layer and extends within at least a portion of the silicon layer. The first doped regions have a first dopant type and are disposed within the light detecting layer. The second doped regions have a second dopant type and are disposed within the light detecting layer. The first doped regions and the second doped regions are alternatingly arranged. M and N are integers equal to or greater than 2.