A solar cell includes a substrate, a first doped conductive layer, a local doping region, and a first electrode. The first layer is formed at one side of the substrate. The local doping region is formed at one side of the first layer away from the substrate, and the local doping region is doped with a same doping element as that in the first layer and first element. The first electrode is provided at one side of the local doping region away from the first layer and electrically connected to the local doping region. This structure can reduce the surface barrier, thereby reducing the contact resistivity between the first electrode and the local doping region, so that the first electrode forms better ohmic contact with the local doping region, which is conducive to the transport of carriers, improving the filling factor, and improving the efficiency.

A solar cell includes a substrate, a first doped conductive layer, a local doping region, and a first electrode. The first layer is formed at one side of the substrate. The local doping region is formed at one side of the first layer away from the substrate, and the local doping region is doped with a same doping element as that in the first layer and first element. The first electrode is provided at one side of the local doping region away from the first layer and electrically connected to the local doping region. This structure can reduce the surface barrier, thereby reducing the contact resistivity between the first electrode and the local doping region, so that the first electrode forms better ohmic contact with the local doping region, which is conducive to the transport of carriers, improving the filling factor, and improving the efficiency.

An ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof are provided. The ultrathin silicon oxynitride interface material is an SiON film with a thickness of 1 nm to 4 nm, and the percentage content of N atoms is 1% to 40%. Compared with silicon oxide, the diffusion rate of boron in the SiON film of the present disclosure is low, which effectively reduces the damaging effect of boron, improves the integrity of the SiON film and maintains the chemical passivation effect. The SiON film with high nitrogen concentration can noticeably lower the concentration of boron on the silicon surface so as to lessen the boron-induced defects. Furthermore, the SiON film has an energy band structure approximate to silicon nitride, which increases the hole transport efficiency and hole selectivity, and further improves the passivation quality and reduces the contact resistivity.

An ultrathin silicon oxynitride interface material, a tunnel oxide passivated structure and preparation methods and applications thereof are provided. The ultrathin silicon oxynitride interface material is an SiON film with a thickness of 1 nm to 4 nm, and the percentage content of N atoms is 1% to 40%. Compared with silicon oxide, the diffusion rate of boron in the SiON film of the present disclosure is low, which effectively reduces the damaging effect of boron, improves the integrity of the SiON film and maintains the chemical passivation effect. The SiON film with high nitrogen concentration can noticeably lower the concentration of boron on the silicon surface so as to lessen the boron-induced defects. Furthermore, the SiON film has an energy band structure approximate to silicon nitride, which increases the hole transport efficiency and hole selectivity, and further improves the passivation quality and reduces the contact resistivity.

The present disclosure is applicable to the technical field of solar cells, and provides a passivated contact structure, a solar cell, a module, and a system. The passivated contact structure of a solar cell includes: a silicon substrate; and a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein a local region of the first silicon oxide layer includes a thinned region, and the proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region. Thus, the thinning of the local region of the first silicon oxide layer allows H to quickly pass through, so that a H passivation effect can be effectively improved, and the heat treatment control difficulty is reduced.

The present disclosure is applicable to the technical field of solar cells, and provides a passivated contact structure, a solar cell, a module, and a system. The passivated contact structure of a solar cell includes: a silicon substrate; and a first silicon oxide layer, a doped layer, a second silicon dioxide layer and a passivation layer, which are sequentially disposed on the silicon substrate, wherein a local region of the first silicon oxide layer includes a thinned region, and the proportion of a silicon oxide content in the first silicon oxide layer is reduced in the thinned region. Thus, the thinning of the local region of the first silicon oxide layer allows H to quickly pass through, so that a H passivation effect can be effectively improved, and the heat treatment control difficulty is reduced.

Some embodiments relate to an integrated circuit device that includes an optical coupler structure and a photodiode structure over a substrate, where the photodiode structure is laterally adjacent the optical coupler structure. The photodiode structure includes a doped structure including a first semiconductor material, and a light absorption structure includes a second semiconductor material, contacts the doped structure, and is aligned with the optical coupler structure. The light absorption structure includes a first region proximal to the optical coupler structure and having a first width, a second region distal from the optical coupler structure and having a second width greater than the first width, and a tapered region connecting the first region to the second region. The tapered region has a first end adjacent the first region and a second end adjacent the second region. The first end has the first width and the second end has the second width.

The present application provides a solar cell, including: a silicon substrate, and a plurality of fingers formed on a surface of the silicon substrate. The silicon substrate is doped with antimony, and a concentration of antimony in the silicon substrate is a atom/cm.sup.3. The plurality of fingers extend in a first direction, and a density of fingers with the same polarity in a second direction perpendicular to the first direction is n/cm. n and a meet the following relationship: 35k.Math.lg an35Ig a, where k is a constant less than or equal to 2, a ranges from 1E13 to 2E17.

The present application provides a solar cell, including: a silicon substrate, and a plurality of fingers formed on a surface of the silicon substrate. The silicon substrate is doped with antimony, and a concentration of antimony in the silicon substrate is a atom/cm.sup.3. The plurality of fingers extend in a first direction, and a density of fingers with the same polarity in a second direction perpendicular to the first direction is n/cm. n and a meet the following relationship: 35k.Math.lg an35Ig a, where k is a constant less than or equal to 2, a ranges from 1E13 to 2E17.

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.