Methods of fabricating solar cell emitter regions with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer, and resulting solar cells, are described. In an example, a solar cell includes a substrate having a light-receiving surface and a back surface. A P-type emitter region is disposed on the back surface of the substrate. An N-type emitter region is disposed in a trench formed in the back surface of the substrate. An N-type passivation layer is disposed on the N-type emitter region. A first conductive contact structure is electrically connected to the P-type emitter region. A second conductive contact structure is electrically connected to the N-type emitter region and is in direct contact with the N-type passivation layer.

A functional polycrystalline silicon tunneling silicon oxide passivated contact structure (TOPCon) and a preparation method thereof are provided. The functional polycrystalline silicon tunneling silicon oxide passivated contact structure includes a crystalline silicon substrate, a nano silicon oxide, and a functional polycrystalline silicon structure laminated in sequence. The functional polycrystalline silicon structure includes a carbon and nitrogen co-doped polycrystalline silicon layer, or alternating layers of a carbon-doped polycrystalline silicon layer and a nitrogen-doped polycrystalline silicon layer. The present invention uses doping engineering to prepare new polycrystalline silicon with different functions, namely, carbon-doped polycrystalline silicon, nitrogen-doped polycrystalline silicon, and carbon and nitrogen co-doped polycrystalline silicon, and forms a functional polycrystalline silicon structure, exerting different functional effects of carbon and nitrogen doped atoms, and simultaneously realizing passivation in the bulk and surface of the silicon wafer, thereby obtaining a TOPCon structure with ultra-high passivation performance.

Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.

Image sensors and methods of forming the same are provided. An image sensor according to the present disclosure includes a silicon substrate, a germanium region disposed in the silicon substrate, a doped semiconductor isolation layer disposed between the silicon substrate and the germanium region, a heavily p-doped region disposed on the germanium region, a heavily n-doped region disposed on the silicon substrate, a first n-type well disposed immediately below the germanium region, a second n-type well disposed immediately below the heavily n-doped region, and a deep n-type well disposed below and in contact with the first n-type well and the second n-type well.

A sensor element includes a first silicon semiconductor portion, a second silicon semiconductor portion, a third silicon semiconductor portion, and a p-n junction. The first silicon semiconductor portion includes a first p-type impurity. The second silicon semiconductor portion is arranged on the first silicon semiconductor portion and includes a second p-type impurity. The third silicon semiconductor portion is arranged on the second silicon semiconductor portion and includes an n-type impurity. The p-n junction is defined between the second silicon semiconductor portion and the third silicon semiconductor portion. The sensor element has light-receiving sensitivity to light having a wavelength longer than a wavelength corresponding to a band gap of silicon.

A sensor element includes a first silicon semiconductor portion, a second silicon semiconductor portion, a third silicon semiconductor portion, and a p-n junction. The first silicon semiconductor portion includes a first p-type impurity. The second silicon semiconductor portion is arranged on the first silicon semiconductor portion and includes a second p-type impurity. The third silicon semiconductor portion is arranged on the second silicon semiconductor portion and includes an n-type impurity. The p-n junction is defined between the second silicon semiconductor portion and the third silicon semiconductor portion. The sensor element has light-receiving sensitivity to light having a wavelength longer than a wavelength corresponding to a band gap of silicon.

An semiconductor detector includes an n-type semiconductor substrate, a detection electrode formed on a first surface of the semiconductor substrate, a plurality of drift electrodes formed to surround the detection electrode and applied with a voltage causing a potential gradient in which a potential changes toward the detection electrode, a radiation incidence window provided on a second surface of the semiconductor substrate, a P-type semiconductor region formed by adding boron to a surface side on the second surface of the semiconductor substrate through the radiation incidence window, and a depleting electrode causing a reverse bias between the P-type semiconductor region formed on the second surface and an N-type semiconductor region formed in the semiconductor substrate. F is added to the P-type semiconductor region, and a region with the highest concentration of F is located deeper than a region with the highest concentration of B.

An semiconductor detector includes an n-type semiconductor substrate, a detection electrode formed on a first surface of the semiconductor substrate, a plurality of drift electrodes formed to surround the detection electrode and applied with a voltage causing a potential gradient in which a potential changes toward the detection electrode, a radiation incidence window provided on a second surface of the semiconductor substrate, a P-type semiconductor region formed by adding boron to a surface side on the second surface of the semiconductor substrate through the radiation incidence window, and a depleting electrode causing a reverse bias between the P-type semiconductor region formed on the second surface and an N-type semiconductor region formed in the semiconductor substrate. F is added to the P-type semiconductor region, and a region with the highest concentration of F is located deeper than a region with the highest concentration of B.

The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm.sup.3 to 2E+16 cm.sup.3, and an oxygen content in the silicon wafer is less than 25 ppma.

The present disclosure provides a silicon wafer, a solar cell, and a solar module. In an example silicon wafer, a concentration of an antimony element in the silicon wafer ranges from 4E+14 cm.sup.3 to 2E+16 cm.sup.3, and an oxygen content in the silicon wafer is less than 25 ppma.