A MOS transistor structure for matched operation in weak-inversion or sub-threshold range (e.g. input-pair of operational amplifier, comparator, and/or current-mirror) is disclosed. The transistor structure may include a well region of any impurity type in a substrate (SOI is included). The well-region can even be represented by the substrate itself. At least one transistor is located in the well region, whereby the active channel-region of the transistor is independent from lateral isolation interfaces between GOX (gate oxide) and FOX (field oxide; including STI-shallow trench isolation).

A high voltage DMOS half-bridge output for various DC to DC converters on a monolithic, junction isolated wafer is presented. A high-side lateral DMOS transistor is based on the epi extension diffusion and a five layer RESURF structure. The five layers are made possible by the epi extension diffusion which is formed by a suitable n-type dopant diffused into a p-type substrate and it is the same polarity as the epi. The five layers, starting with the p-type substrate, are the substrate, the n-type epi extension diffusion, a p-type buried layer, the n-type epi and a shallow p-type layer at the top of the epi. The epi extension is also used to shape the electric field by a specific lateral distribution and make the lateral and vertical electric fields to be the smoothest to avoid electric field induced breakdown in the silicon or oxide layers above the silicon.

A semiconductor device includes a first semiconductor layer of a first conductivity type formed on one side of a semiconductor substrate; a second semiconductor layer of a second conductivity type formed on the first semiconductor layer; a third semiconductor layer of the first conductivity type formed on the second semiconductor layer; an opening part formed by removing part of the first to third semiconductor layers; a gate insulating film formed so as to cover an inner wall of the opening part; a gate electrode formed inside the opening part via the gate insulating film; a source electrode formed on a surface of the third semiconductor layer; a drain electrode connected to a part corresponding to the gate electrode on another side of the semiconductor substrate; and a fourth electrode formed on the another side of the semiconductor substrate at a part corresponding to the source electrode.

A semiconductor device having a super junction structure includes a substrate, an epitaxial layer of a first conductivity type, a first trench, a first doped region of a second conductivity type opposite to the first conductivity type, a second trench and a second doped region of the first conductivity type. The epitaxial layer of the first conductivity type is over the substrate. The first trench is in the epitaxial layer. The first doped region of the second conductivity type is in the epitaxial layer and surrounds the first trench. The second trench is in the epitaxial layer and separated from the first trench. The second doped region of the first conductivity type is in the epitaxial layer and surrounds the second trench. The second doped region has a dopant concentration greater than a dopant concentration of the epitaxial layer. A method for manufacturing the semiconductor device is also provided.

A MOS transistor structure is provided. The MOS transistor structure includes a semiconductor substrate having an active area including a first edge and a second edge opposite thereto. A gate layer is disposed on the active area of the semiconductor substrate and has a first edge extending across the first and second edges of the active area. A source region having a first conductivity type is in the active area at a side of the first edge of the gate layer and between the first and second edges of the active area. First and second heavily doped regions of a second conductivity type are in the active area adjacent to the first and second edges thereof, respectively, and spaced apart from each other by the source region.

A device includes a substrate, a buffer layer, a nanowire, a gate structure, and a remnant of a sacrificial layer. The buffer layer is above the substrate. The nanowire is above the buffer layer and includes a pair of source/drain regions and a channel region between the source/drain regions. The gate structure surrounds the channel region. The remnant of the sacrificial layer is between the buffer layer and the nanowire and includes a group III-V semiconductor material.

A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the substrate, a source region disposed in the high-voltage well, a drain region disposed in the high-voltage well and spaced apart from the source region along a first direction, and a buried layer having the second conductivity type and disposed under an area between the source region and the drain region.

A field effect transistor (FET) having one or more fins provides an extended current path as compared to conventional finFETs. A source terminal is disposed on a first fin between a first dummy gate and a gate structure. A drain terminal is disposed on a second fin between a second dummy gate and a third dummy gate. A first gate oxide layer disposed under second and third dummy gates is made to be thinner than a second gate oxide layer disposed under the first dummy gate and the gate structure. By making the first gate oxide layer thinner, an overall footprint of the finFET device is reduced.

Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when manufacturing multiple semiconductor devices. When a concentration balance is disrupted due to an increase in doping region size, doping concentration is still controllable in example by using ion injected blocking pattern. Thus, the examples relate to a semiconductor and manufacture device with even doping, and high breakdown voltage obtainable as a result of such doping.

In a method for manufacturing a semiconductor device, when a second conductive type impurity layer is formed to provide a deep layer having a second conductive type in a first concavity and to provide a channel layer having the second conductive type on a surface of a drift layer, an epitaxial growth is performed under a growth condition that a contact trench provided by a recess is formed on a surface of a part of the second conductive type impurity layer corresponding to a center position of the first concavity, and a contact region is formed by ion-implanting a second conductive type impurity on a bottom of the contact trench.