A semiconductor device is provided. The semiconductor device includes a semiconductor structure comprising silicon carbide. The semiconductor device further includes a mesa structure protruding in a first direction from the semiconductor structure, the mesa structure extending in a second direction between a first contact on the semiconductor structure and a second contact on the semiconductor structure. The semiconductor device further includes a channel region in the mesa structure. The semiconductor device further includes an electrically floating confining region, the electrically floating confining region in contact with the channel region in the mesa structure. The semiconductor device further includes a third contact on at least one sidewall of the mesa structure.

A method for producing a 3D semiconductor device including: providing a first level, including a single crystal layer; forming memory control circuits in and/or on the first level which include first single crystal transistors and at least two interconnection metal layers; forming at least one second level; performing a first etch step into the second level; forming at least one third level on top of the second level; performing additional processing steps to form first memory cells within the second level and second memory cells within the third level, where each of the first memory cells include at least one second transistor including a metal gate, where each of the second memory cells include at least one third transistor; and performing bonding of the first level to the second level, where the first level includes control of power delivery to the at least one third transistor.

A semiconductor device including: a first level including a plurality of first metal layers; a second level overlaying the first level, where the second level includes at least one single-crystal silicon layer and a plurality of transistors, where each of the plurality of transistors includes a single-crystal channel, where the second level includes a plurality of second metal layers which includes interconnections between the plurality of transistors, the second level is overlaid by an isolation layer; a connective path from the plurality of transistors to the plurality of first metal layers, where at least one of the plurality of transistors includes a second single-crystal channel overlaying a first single-crystal channel, where each of at least one of the plurality of transistors includes at least a two sided gate, where the first single-crystal channel is self-aligned to the second single-crystal channel being processed following a same lithography step.

A method of manufacturing a semiconductor device includes implanting a channel region of a first transistor and a channel region of a second transistor to have a first conductivity type. The method further includes forming source/drain regions of the first transistor to have the first conductivity type and source/drain regions of the second transistor to have a second conductivity type, wherein the second conductivity is different from the first conductivity type. The method further includes depositing a first work function layer over the channel region of the first transistor. The method further includes depositing a second work function layer over the channel region of the second transistor, wherein the first work function layer includes a same material as the second work function layer.