Disclosed is a CMOS element. The CMOS element comprises a substrate, a first metal layer, an insulation layer and a first type metal oxide semiconductor layer; and the element further comprises a first, a second and a third metal parts which are located on the insulation layer, and the first and the second metal parts are located at two sides of the first type metal oxide semiconductor layer and both contacts therewith; a second type organic semiconductor layer, located in a gap between the second, and the third metal parts and on the second, the third metal parts where are adjacent to the gap; a passivation layer, located on the first, the second and the third metal parts, the first type metal oxide semiconductor layer and the second type organic semiconductor layer; a third metal layer located on the passivation layer corresponding to the second type organic semiconductor layer.

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

A flexible display apparatus includes: a flexible substrate including a first surface and a second surface which is opposite to the first surface; a first display unit which displays an image with light and is on the first surface of the flexible substrate, the first display unit including a transmission area at which light from the flexible substrate passes through the first display unit to outside the first display unit; and a second display unit which displays an image with light and is on the second surface of the flexible substrate, the second display unit disposed corresponding to the transmission area of the first display unit on the first surface of the flexible substrate

A semiconductor device that can transmit and receive data without contact is popular partly as some railway passes, electronic money cards, and the like; however, it has been a prime task to provide an inexpensive semiconductor device for further popularization. In view of the above current conditions, a semiconductor device of the present invention includes a memory with a simple structure for providing an inexpensive semiconductor device and a manufacturing method thereof. A memory element included in the memory includes a layer containing an organic compound, and a source electrode or a drain electrode of a TFT provided in the memory element portion is used as a conductive layer which forms a bit line of the memory element.

Oxacycloolefinic polymers as typically obtained by metathesis polymerization using Ru-catalysts, show good solubility and are well suitable as dielectric material in electronic devices such as capacitors and organic field effect transistors.

A thin film transistor includes a gate electrode, an insulation film disposed on the gate electrode, a semiconductor layer facing the gate electrode with the insulation film in between, and a source-drain wiring layer electrically coupled to the semiconductor layer, and including a first wiring layer and a second wiring layer. The first wiring layer is in contact with the semiconductor layer between the semiconductor layer and the insulation film, and is configured of a transparent electroconductive film. The second wiring layer is overlapped with a portion of the first wiring layer. Another semiconductor layer made of a material same as a material of the semiconductor layer is stacked on the second wiring layer.

The present invention provides a bio-sensing device. The bio-sensing device includes an array of unit cells, each unit cell including: a source electrode and a drain electrode spaced apart from each other; a sensing film that serves as a channel between the source electrode and the drain electrode; and gate electrodes spaced apart from the sensing film, wherein the gate electrodes is disposed at a lower level than the source electrode, the drain electrode and the sensing film.

In a method of forming a gate-all-around field effect transistor (GAA FET), a fin structure including CNTs embedded in a semiconductor layer is formed, a sacrificial gate structure is formed over the fin structure, the semiconductor layer is doped at a source/drain region of the fin structure, an isolation insulating layer is formed, a source/drain opening is formed by patterning the isolation insulating layer, and a source/drain contact layer is formed over the doped source/drain region of the fin structure.

We describe a method for reducing a parasitic resistance at an interface between a conducting electrode region and an organic semiconductor in a thin film transistor, the method comprising: providing a solution comprising a dopant for doping said semiconductor, and depositing said solution onto said semiconductor and/or said conducting electrode region to selectively dope said semiconductor adjacent said interface between said conducting electrode region and said semiconductor, wherein depositing said solution comprises inkjet-printing said solution.

A pixel circuit, a drive method, a display panel and a display device are provided. A switch transistor is arranged between a first power supply signal and an input terminal (a source) of a drive transistor. When a drive circuit is at a second detection period during which drive current of a light emitting element is detected, the switch transistor is controlled to be turned off, such that the first power supply signal is disconnected from the source of the drive transistor. In this case, no current flows through the light emitting element, and therefore the light emitting element does not emit light, thereby solving a problem in the conventional technology that the light emitting element is lighted and it is not dark in a dark state when drive current of the pixel circuit is detected.