A light-emitting device, a method of manufacturing the same and an electronic apparatus. The light-emitting device includes a silicon-based base substrate; at least one organic light-emitting diode device at the silicon-based base substrate; a first encapsulation layer, at a side of the at least one organic light-emitting diode device away from the silicon-based base substrate and including one or more sublayers; a color filter layer, at a side of the first encapsulation layer away from the at least one organic light-emitting diode device; and a second encapsulation layer, at a side of the color filter layer away from the first encapsulation layer and including one or more sublayers. A refractive index of at least one sublayer in the first encapsulation layer is greater than a refractive index of at least one sublayer in the second encapsulation layer.

A molecular electronic device (10) includes a framework of polynucleotides (3), one or more molecular electronic components (4) and one or more electrical contacts (7). The molecular electronic components and the electrical contacts are each connected to the plurality of polynucleotides such that the molecular electronic components and the electrical contacts are located with respect to the framework and with respect to each other. This forms a coupling between the electrical contacts and the molecular electronic components.

A transistor has a substrate, source and drain electrodes on the substrate, the source and drain electrodes formed of a conductor ink having silver nanoparticles with integrated dipolar surfactants, an organic semiconductor forming a channel between the source and drain electrodes, the organic semiconductor in contact with the source and drain electrodes, a gate dielectric layer having a first surface in contact with the organic semiconductor, and a gate electrode in contact with a second surface of the gate dielectric layer, the gate electrode formed of silver nanoparticles with integrated dipolar surfactants.

A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased.

An object of the present invention is to provide an electrode material for an organic semiconductor device which maintains excellent conductivity and of which contact properties with an organic semiconductor becomes favorable. The electrode material for an organic semiconductor device of the present invention contains inorganic nanoparticles and an organic π-conjugated ligand, in which the organic π-conjugated ligand is a ligand having at least one electron-withdrawing substituent.

The disclosure provides a method of manufacturing an organic electronic device, including providing a layered device structure, the layered device structure including a plurality of electrodes and an electronically active region, said providing of the layered device structure including steps of providing an organic semiconducting layer, applying a structuring layer to the organic semiconducting layer, the structuring layer having a first region and a second region, the first region being covered by a layer material, applying a contact improving layer to the structuring layer by depositing at least one of an organic dopant material and an organic dopant-matrix material at least in the first region, depositing a layer material on the contact improving layer at least in the first region, and removing the structuring layer at least in the second region. Furthermore, an organic electronic device is provided.

Technologies are generally described for a four-terminal, gate-controlled, thin-film thyristor device. The thyristor device may essentially be an n-type thin-film transistor (TFT) with an additional emitter terminal. The thyristor device may exhibit an S-shaped negative differential resistance (NDR) characteristic resulting from conductance modulation. The conductance modulation may be caused by formation of a secondary channel for current flow due to an inherent structure of the device. The secondary channel may be formed in a semiconductor area within the device, the semiconductor area including a hole transporting organic semiconductor layer (HTL) and an electron transporting organic semiconductor layer (ETL). A gate terminal of the thyristor device may further allow onset of NDR characteristics to be controlled and may allow the device to be switched off.

A method for forming a PN junction in graphene includes: forming a graphene layer, and forming a DNA molecule layer on a partial region of the graphene layer, the DNA molecule layer having a nucleotide sequence structure designed to provide the graphene layer with a predetermined doping property upon adsorption on the graphene layer. The DNA molecule has a nucleotide sequence structure designed for doping of graphene so that doped graphene has a specific semiconductor property. The DNA molecule is coated on the surface of the graphene layer of which the partial region is exposed by micro patterning, and thereby, PN junctions of various structures may be formed by a region coated with the DNA molecule and a non-coated region in the graphene layer.

Provided is a thin film transistor array substrate, including a gate electrode, a gate insulating layer covering the gate electrode, a semiconductor pattern formed on the gate insulating layer and including a channel region overlapping the gate electrode, a source electrode and a drain electrode formed on the semiconductor pattern and facing each other with a first opening exposing the channel region therebetween, a first protective layer formed on the gate insulating layer to cover the source electrode, the drain electrode and the semiconductor pattern and a metal oxide layer formed along a surface of the first protective layer.

A light-emitting component is provided including a functional layer stack having at least one light-emitting layer which is set up to generate light during the operation of the component, a first electrode and a second electrode, which are set up to inject charge carriers into the functional layer stack during operation, and an encapsulation arrangement having encapsulation material, which is arranged above at least one of the electrodes and the functional layer stack. At least one of the electrodes is transparent and contains a wavelength conversion substance and/or the encapsulation material is transparent and contains a wavelength conversion substance.