A method for manufacturing an organic memory device is disclosed. According to one embodiment, the method comprises the steps of: forming a first electrode on a substrate; forming an organic active layer on the first electrode; and forming a second electrode on the organic active layer through an orthogonal photolithography technique using a fluorinated material.

A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a nano-scale semiconductor structure. The second electrode is located on the second end.

A field effect transistor (FET) structure includes a substrate, an internal gate, an insulation layer, a semiconductor strip, a gate dielectric insulator, and a gate conductor. The internal gate includes a floor portion located on the substrate and a wall portion extending from the floor portion. The insulation layer is located on the floor portion of the internal gate. The semiconductor strip is located on the wall portion and a portion of the insulation layer, and the semiconductor strip includes source/drain regions and a channel region adjacent to the source/drain regions. The gate dielectric insulator is located on the channel region. The gate conductor is located on the gate dielectric insulator.

An organic EL display device has a TFT formed on the substrate, and an organic EL layer formed on the TFT. A protective layer is formed on the organic EL layer, and a first bather layer which contains AlOx is formed between the substrate and the TFT.

The disclosure provides a thin film transistor, an array substrate, and a method for fabricating the same. An embodiment of the disclosure provides a method for fabricating a thin film transistor, the method including: forming a gate, a gate insulation layer, and an active layer above an underlying substrate successively; forming a patterned hydrophobic layer above the active layer, wherein the hydrophobic layer includes first pattern components, and orthographic projections of the first pattern components onto the underlying substrate overlap with a orthographic projection of a channel area at the active layer onto the underlying substrate; and forming a source and a drain above the hydrophobic layer, wherein the source and the drain are located respectively on two sides of a channel area, and in contact with the active layer.

There is disclosed a method for preparing a modified electrode for an organic electronic device, wherein said modified electrode comprises a surface modification layer, comprising: (i) depositing a solution comprising M(tfd).sub.3, wherein M is Mo, Cr or W, and at least one solvent onto at least a part of at least one surface of said electrode; and (ii) removing at least some of said solvent to form said surface modification layer on said electrode.

Urethane (multi)-(meth)acrylate (multi)-silane compositions, and articles including a (co)polymer reaction product of at least one urethane (multi)-(meth)acrylate (multi)-silane precursor compound. The disclosure also articles including a substrate, a base (co)polymer layer on a major surface of the substrate, an oxide layer on the base (co)polymer layer; and a protective (co)polymer layer on the oxide layer, the protective (co)polymer layer including the reaction product of at least one urethane (multi) (meth)acrylate (multi)-silane precursor compound. The substrate may be a (co)polymeric film or an electronic device such as an organic light emitting device, electrophoretic light emitting device, liquid crystal display, thin film transistor, or combination thereof. Methods of making urethane (multi)-(meth)acrylate (multi)-silane precursor compounds and their use in composite multilayer barrier films are also described. Methods of using such barrier films in articles selected from a solid state lighting device, a display device, and combinations thereof, are also described.

The present disclosure pertains to the field of carbon nanotube technologies, and provides a carbon nanotube semiconductor device and a manufacturing method thereof. The manufacturing method of a carbon nanotube semiconductor device provided in the present disclosure comprises: forming a carbon nanotube layer with a carbon nanotube solution; and treating the carbon nanotube layer with an acidic solution. The carbon nanotube semiconductor device manufactured by the method of the present disclosure has good performance uniformity.

A method of making a carbon nanotube structure includes depositing a first oxide layer on a substrate and a second oxide layer on the first oxide layer; etching a trench through the second oxide layer; removing end portions of the first oxide layer and portions of the substrate beneath the end portions to form cavities in the substrate; depositing a metal in the cavities to form first body metal pads; disposing a carbon nanotube on the first body metal pads and the first oxide layer such that ends of the carbon nanotube contact each of the first body metal layers; depositing a metal to form second body metal pads on the first body metal pads at the ends of the carbon nanotube; and etching to release the carbon nanotube, first body metal pads, and second body metal pads from the substrate, first oxide layer, and second oxide layer.

Various embodiments may relate to an electronic structure, including at least one organic layer, at least one metal growth layer grown onto the organic layer, and at least one metal layer grown on the metal growth layer. The at least one metal growth layer contains germanium. Various embodiments further relate to a method for producing the electronic structure.