The techniques described herein relate to a semiconductor structure including: a substrate, or a single crystal growth surface, including single crystal 4H-SiC(0001); a buffer layer on the single crystal growth surface; and an epitaxial oxide layer on the buffer layer. The buffer layer can include a crystal symmetry type that is compatible with the single crystal 4H-SiC(0001). The epitaxial oxide layer can include single crystal (Al.sub.xGa.sub.1-x).sub.2O.sub.3 with a monoclinic or corundum crystal symmetry, and where 0x1.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

An indirect bandgap thin film semiconductor circuit can be combined with a compound semiconductor LED such as to provide an active matrix LED array that can have high luminous capabilities such as for a light projector application. In another example, a highly efficient optical detector is achievable through the combination of indirect and direct bandgap semiconductors. Applications can include display technologies, light detection, MEMS, chemical sensors, or piezoelectric systems. An LED array can provide structured illumination, such as for a light and pattern source for projection displays, such as without requiring spatial light modulation (SLM). An example can combine light from separate monolithic light projector chips, such as providing different component colors. An example can provide full color from a single monolithic light projector chip, such as including selectively deposited phosphors, such as to contribute individual component colors to an overall color of a pixel.

The disclosure concerns an infrared emitter is provided comprising a metalized membrane emitting infrared light in operation. The membrane comprises a two dimensional array of infrared wavelength sized through-holes and to each side a thin metal layer comprising also an array of through-holes. The through-holes are arranged as a two-dimensional periodic array and each of said through-holes have a cross section having a maximum and a minimum dimension of less than any wavelength of the emitted infrared light. The peak wavelength of the emitted infrared light is proportional to the periodicity of the through-holes. At least one of the metal layers is connected to an electrical current source that provides an electrical current that heats at least one of the metal layers so that a narrow bandwidth and highly directive light beam of infrared light is emitted. The membrane is arranged on a membrane support and both are made of a material that resists to temperatures higher than 400.

Carbon-based light emitting diodes (LEDs) and techniques for the fabrication thereof are provided. In one aspect, a LED is provided. The LED includes a substrate; an insulator layer on the substrate; a first bottom gate and a second bottom gate embedded in the insulator layer; a gate dielectric on the first bottom gate and the second bottom gate; a carbon material on the gate dielectric over the first bottom gate and the second bottom gate, wherein the carbon material serves as a channel region of the LED; and metal source and drain contacts to the carbon material.

A light emitting device includes a semiconductor nanocrystal and a charge transporting layer that includes an inorganic material. The charge transporting layer can be a hole or electron transporting layer. The inorganic material can be an inorganic semiconductor.

The present invention provides an adhesion promoter for promoting adhesiveness of a cured product of an addition curable organopolysiloxane resin composition, the adhesion promoter comprising at least one alkoxy group bonded to a silicon atom, and at least one cyano group-containing organic group bonded to a silicon atom in one molecule. There can be provided an adhesion promoter which can make a cured product of an addition curable organopolysiloxane resin composition excellent in heat resistance, workability, adhesiveness, and gas barrier property by adding it to the composition.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

Provided is a surface light-emitting device comprising a substrate composed of an oriented polycrystalline zinc oxide sintered body in a plate shape, a light emitting functional layer provided on the substrate, and an electrode provided on the light emitting functional layer. According to the present invention, a surface light-emitting device having high luminous efficiency can be inexpensively provided.