H10F10/146

SOLAR CELL AND METHOD FOR PRODUCING SOLAR CELL

A solar cell includes: first and second conductivity type diffusion layers which are formed on a backside of a light-receiving surface of a substrate, first and second electrode portions, first and second electrode line portions, and first and a second electrode bus bar portions; a first insulator film which is formed to cover a side portion and a top of the second electrode portion in an intersection region of the second electrode portion and the first electrode bus bar portion, a second insulator film which is formed to cover a side portion and a top of the first electrode portion in an intersection region of the first electrode portion and the second electrode bus bar portion, wherein the second electrode portion is formed continuously in a line shape under the first insulator film, and the first electrode portion is formed continuously in a line shape under the second insulator film.

Impurity-diffusing composition and method for producing semiconductor element

An impurity-diffusing composition including (A) a polysiloxane represented by Formula (1) and (B) an impurity diffusion component. ##STR00001## In the formula, R.sup.1 represents an aryl group having 6 to 15 carbon atoms, and a plurality of R.sup.1 may be the same or different. R.sup.2 represents any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, an acyl group having 2 to 6 carbon atoms, and an aryl group having 6 to 15 carbon atoms, and a plurality of R.sup.2 may be the same or different. R.sup.3 and R.sup.4 each represent any of a hydroxyl group, an alkyl group having 1 to 6 carbon atoms, an alkoxy group having 1 to 6 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, and an acyl group having 2 to 6 carbon atoms, and a plurality of R.sup.3 and a plurality of R.sup.4 each may be the same or different. The ratio of n:m is 95:5 to 25:75.

Light receiving element module and manufacturing method therefor

Light receiving elements of a back connection type including first and second electrodes on their back sides are connected by an inter-element connecting body including a tabular main body section and an inter-element connecting section to form a light receiving element module. The main body section is selectively directly connected to the first electrode and arranged on the second electrode via an insulating layer. The main body section covers substantially the entire back side of each of the light receiving elements excluding a part of the second electrode. The second electrode is connected to the inter-element connecting section of an adjacent light receiving element. The main body section forms a reflecting section between the main body section and the light receiving element to enable reflected light to be made incident on the light receiving element from a gap between the first and second electrodes.

METHOD OF MANUFACTURING SOLAR CELL
20170179332 · 2017-06-22 · ·

Disclosed herein are a solar cell and a method of manufacturing the same. The solar cell module includes a semiconductor substrate, a first passivation film located on a front surface of the semiconductor substrate, a second passivation film located on a rear surface of the semiconductor substrate, a front electric field region located on the first passivation film on the front surface of the semiconductor substrate and being of a same conductivity-type as that of the semiconductor substrate, an emitter region located on the second passivation film on the rear surface of the semiconductor substrate and being of a conductivity-type opposite that of the semiconductor substrate, first electrodes conductively connected to the front electric field region, and second electrode conductively connected to the emitter region.

SOLAR CELL AND METHOD OF MANUFACTURING THE SAME

Disclosed is a solar cell including a semiconductor substrate, a protective-film layer on a surface of the semiconductor substrate, a polycrystalline semiconductor layer over the protective-film layer, a first conductive area formed by selectively doping the semiconductor layer with a first conductive dopant, a second conductive area doped with a second conductive dopant and located between neighboring portions of the first conductive area, an undoped barrier area located between the first conductive area and the second conductive area, a first electrode connected to the first conductive area, and a second electrode connected to the second conductive area. Each of the first conductive area and the second conductive area includes a second crystalline area having a crystalline structure different from that of the barrier area, and the second crystalline areas of the first and second conductive areas include a second polycrystalline area and a fourth crystalline area having different depths.

SOLAR CELL FABRICATION USING LASER PATTERNING OF ION-IMPLANTED ETCH-RESISTANT LAYERS AND THE RESULTING SOLAR CELLS

Solar cell fabrication using laser patterning of ion-implanted etch-resistant layers, and the resulting solar cells, are described. In an example, a back contact solar cell includes an N-type single crystalline silicon substrate having a light-receiving surface and a back surface. Alternating continuous N-type emitter regions and segmented P-type emitter regions are disposed on the back surface of the N-type single crystalline silicon substrate, with gaps between segments of the segmented P-type emitter regions. Trenches are included in the N-type single crystalline silicon substrate between the alternating continuous N-type emitter regions and segmented P-type emitter regions and in locations of the gaps between segments of the segmented P-type emitter regions. An approximately Gaussian distribution of P-type dopants is included in the N-type single crystalline silicon substrate below the segmented P-type emitter regions. A maximum concentration of the approximately Gaussian distribution of P-type dopants is approximately in the center of each of the segmented P-type emitter regions between first and second sides of each of the segmented P-type emitter regions. Substantially vertical P/N junctions are included in the N-type single crystalline silicon substrate at the trenches formed in locations of the gaps between segments of the segmented P-type emitter regions.

SOLAR CELL AND METHOD FOR PRODUCING THEREOF

Solar cell including: a semiconductor substrate of a first conductivity type having a region of the first conductivity type and region of a second conductivity type on the back side; a first finger electrode composed of a first contact portion and first current collector, a second finger electrode composed of a second contact portion and second current collector, a first bus bar electrode, a second bus bar electrode on the backside; an insulator film disposed at least in the area just under the first bus bar electrode and second bus bar electrode; wherein the electrical contact between the first current collector and first bus bar electrode as well as electrical contact between the second current collector and the second bus bar electrode are made on the insulator film; and first contact portion and the second contact portion are in a continuous line shape at least just under the insulator film.

SINGLE-STEP METAL BOND AND CONTACT FORMATION FOR SOLAR CELLS
20170162730 · 2017-06-08 ·

A method for fabricating a solar cell is disclosed. The method can include forming a dielectric region on a surface of a solar cell structure and forming a first metal layer on the dielectric region. The method can also include forming a second metal layer on the first metal layer and locally heating a particular region of the second metal layer, where heating includes forming a metal bond between the first and second metal layer and forming a contact between the first metal layer and the solar cell structure. The method can include forming an adhesive layer on the first metal layer and forming a second metal layer on the adhesive layer, where the adhesive layer mechanically couples the second metal layer to the first metal layer and allows for an electrical connection between the second metal layer to the first metal layer.

METHOD OF FORMING ELECTRODE, ELECTRODE MANUFACTURED THEREFROM AND SOLAR CELL

A method of forming an electrode, an electrode for a solar cell manufactured, and a solar cell, the method including forming a pattern of a finger electrode by: coating a composition for forming a first electrode that includes a conductive powder, an organic vehicle, and a first glass frit that is free of silver and phosphorus, and drying the coated composition for forming a first electrode; forming a pattern of a bus electrode by: coating a composition for forming a second electrode that includes a conductive powder, an organic vehicle, and a second glass frit that includes silver and phosphorus, and drying the coated composition for forming a second electrode; and firing the resultant patterns.

THROUGH SILICON VIA BASED PHOTOVOLTAIC CELL

An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV; wherein the first and second contacts each include a conductive material that is substantially transparent. Other embodiments are described herein.