A photovoltaic cell (1) including a first front collector layer (4), an amorphous silicon layer (6) on the first layer (4) and a second conductive layer (8) on the amorphous silicon layer (6). Electrical connection of the second conductive layer (8) to the first layer (4) is made through the amorphous silicon layer (6) at the periphery of the photovoltaic cell, the electrically conductive layer (8) comprising a positive peripheral bus (8), which is connected to the TCO first layer (4) and to at least one positive connection terminal at one end of the positive peripheral bus, and a negative peripheral bus, which is connected to a negative connection terminal, and the positive and negative peripheral buses being asymmetrical relative to one another, with the positive peripheral bus being longer than the negative peripheral bus.

According to the embodiment, there is provided a solar cell apparatus. The solar cell apparatus includes a back electrode layer on a substrate, a light absorbing layer on the back electrode layer, a buffer layer on the light absorbing layer, a front electrode layer on the buffer layer, and a connection part making contact with the front electrode layer, passing through the light absorbing layer, and making contact with the back electrode layer. The connection part includes a material different from a material constituting the front electrode layer.

A photo-voltaic cell has a first and second two-dimensional array of contact points on the first surface, each coupled to a respective one of base and emitter areas in or on the semi-conductor body. Electrically separate first and second conductor structures on the first surface emanate from each contact point, coupled to contact points of the first and second two-dimensional array respectively. The first conductor structure comprises sets of first conductor line branches, the first conductor line branches of each set branching out from a respective one of the contact points of the first two-dimensional array in at least three successive different directions at less than a hundred and eighty degrees to each other. The second conductor structure comprise second conductor line branches in at least three different directions in areas between respective pairs of adjacent non-parallel ones of the first conductor line branches, each second conductor line branch coupled at least to a respective one of the contact points of the second two-dimensional array.

A paste (32) for use in metallization of a solar cell (12) includes an organic vehicle (44) and a mixture of copper-containing particles (46), metal-oxide-containing nanoparticles (50), and secondary oxide particles (52) different from the metal-oxide-containing nanoparticles (50). The secondary oxide particles (52) include particles (42) of a metal oxide and a metal of the metal oxide capable of reducing at least some of the metal-oxide-containing nanoparticles (50) to metal when heated. The organic vehicle (44) is capable of reducing the metal oxide of the secondary oxide particles (52) upon decomposition of the organic vehicle (44). A paste (32) includes a mixture of particles (42) including metallic copper particles (46), nanoparticles (50), and metal oxide particles (52) in the organic vehicle (44). The nanoparticles (50) include at least one oxide of nickel, copper, cobalt, manganese, and lead. The metal oxide of the metal oxide particles (52) has a more negative Gibbs Free Energy of Formation than a metal oxide of the at least one oxide of the nanoparticles (50).

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

Photovoltaic module with a plurality of thin film photovoltaic cells (2). Each thin film photovoltaic cell (2) has a transparent electrode (12) provided on a transparent substrate (11), a solar cell stack (13) positioned on the transparent electrode (12), and a top electrode (14) positioned on the solar cell stack (13). A plurality of parallel connected PV cell units (3) are provided, each comprising a string of series connected PV cells (2). A positive connection part (6, 20a) and a negative connection part (5, 20b) are present in a single top interconnection layer, providing the parallel connection circuit of the parallel connected PV cell units (3). At least one cross over connection member (9a, 9b) is present in a layer different from the single top interconnection layer, which provides an electrical connection in the negative connection part (5, 20b) and/or in the positive connection part (6, 20a).

The present disclosure discloses a solar cell and a photovoltaic module, and belongs to the field of photovoltaic technologies. An example solar cell includes a first pattern region, the first pattern region includes a plurality of first fingers extending along a first direction and arranged at intervals along a second direction, each of the first fingers includes a plurality of first connection segments disposed at intervals along the first direction and second connection segments connected between two adjacent first connection segments, and the second direction intersects with the first direction. A plurality of second connection segments are arranged at intervals along the second direction, and at least one of the first connection segments is disposed between two adjacent second connection segments. The first connection segments burn through the passivation layer and are electrically connected to the doped region, and the second connection segments do not burn through the passivation layer.

Tri-layer semiconductor stacks for patterning features on solar cells, and the resulting solar cells, are described herein. In an example, a solar cell includes a substrate. A semiconductor structure is disposed above the substrate. The semiconductor structure includes a P-type semiconductor layer disposed directly on a first semiconductor layer. A third semiconductor layer is disposed directly on the P-type semiconductor layer. An outermost edge of the third semiconductor layer is laterally recessed from an outermost edge of the first semiconductor layer by a width. An outermost edge of the P-type semiconductor layer is sloped from the outermost edge of the third semiconductor layer to the outermost edge of the third semiconductor layer. A conductive contact structure is electrically connected to the semiconductor structure.

An example of an apparatus to convert light energy to electrical energy is provided. The apparatus includes a semiconductor material to absorb energy from a photon. The energy is to be converted to a current. Furthermore, the apparatus includes a positive electrode disposed on a backside of the semiconductor material to collect the current from the backside. In addition, the apparatus includes a via to connect the backside of the semiconductor material electrically to a frontside of the semiconductor material. The apparatus also includes a plurality of fingers disposed on the frontside of the semiconductor material to collect the current from the frontside. The apparatus further includes a trunkline connected to the plurality of fingers to deliver the current to the via. The trunkline is to increase a cross-sectional area toward the via to reduce parasitic resistance.

A photovoltaic cell (1) including a first front collector layer (4), an amorphous silicon layer (6) on the first layer (4) and a second conductive layer (8) on the amorphous silicon layer (6). Electrical connection of the second conductive layer (8) to the first layer (4) is made through the amorphous silicon layer (6) at the periphery of the photovoltaic cell, the electrically conductive layer (8) comprising a positive peripheral bus (8), which is connected to the TCO first layer (4) and to at least one positive connection terminal at one end of the positive peripheral bus, and a negative peripheral bus, which is connected to a negative connection terminal, and the positive and negative peripheral buses being asymmetrical relative to one another, with the positive peripheral bus being longer than the negative peripheral bus.