Display devices using feedback-enhanced light emitting diodes are disclosed. The display devices include but are not limited to active and passive matrix displays and projection displays. A light emissive element disposed between feedback elements is used as light emitting element in the display devices. The light emissive element may include organic or non-organic material. The feedback elements coupled to an emissive element allow the emissive element to emit collimated light by stimulated emission. In one aspect, feedback elements that provide this function include, but are not limited to, holographic reflectors with refractive index variations that are continuous.

A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.

Light-emitting devices and methods, wherein, in some embodiments, the devices each include a first mirror having a first face, wherein the first mirror includes a metal and, in some embodiments, is a grown-epitaxial metal mirror (GEMM); and an epitaxial structure, wherein the epitaxial structure is lattice matched with and in contact with at least a first portion of the first face of the first mirror, wherein the epitaxial structure includes an active region configured to emit light at a wavelength , and wherein the active region is located a first non-zero distance away from the first face of the first mirror such that there is plasmonic coupling between the active region and the first mirror.

This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL

A method of manufacturing a package, the method comprising the steps of: preparing a resin compact having a recess, and including a pair of leads arranged at a bottom surface of the recess, a first resin body forming a lateral wall of the recess, and a second resin body arranged between the pair of leads; forming a reflective film entirely on at least the bottom surface of the recess and an inner surface of the lateral wall of the recess; and removing the reflective film formed on the pair of leads in the recess in the resin compact on which the reflective film has been formed.

An organic light-emitting display having an improved aperture ratio, the organic light-emitting display including a rear electrode, an opposite electrode, and a pixel electrode between the rear electrode and the opposite electrode. Here, an insulating layer is interposed between the pixel electrode and the rear electrode, wherein the pixel electrode, the insulating layer, and the rear electrode are configured as a capacitor of the organic light-emitting display. In such a structure, as the capacitor is disposed in a light-emitting area where the pixel electrode exists, it is not necessary to provide an additional space for a capacitor, thus improving an aperture ratio of the display.

A display device includes a substrate, a plurality of pixels, a light emitting element, and an inorganic insulating layer. The pixels are provided to the substrate. The light emitting element is provided to each of the pixels. The inorganic insulating layer has translucency and covers at least part of the light emitting element. The inorganic insulating layer includes a side part and an extending part. The side part is provided to the side surface of the light emitting element. The extending part is provided at a side on the lower end of the side part and extending toward the outer side of the light emitting element than the side part in planar view seen from the normal direction of the substrate.

A radiation emitting semiconductor chip may include a semiconductor layer sequence having an active region configured to generate electromagnetic radiation, a first dielectric mirror layer arranged above the semiconductor layer sequence, and a second dielectric mirror layer arranged above the first dielectric mirror layer. The first dielectric mirror layer may have at least one first recess. A first current spreading layer may be arranged in the first recess and above the first dielectric mirror layer. The second dielectric mirror layer may have at least one second recess extending up to the first current spreading layer. The first recess may not overlap with the second recess in lateral direction in plan view. Furthermore, a method for producing a radiation emitting semiconductor chip is disclosed.

A multispectral filter for electromagnetic radiation, the filter including at least two-colour filters, each colour filter including: a metal grating including metal patterns repeated according to a given period, each metal pattern being spaced apart from an adjacent metal pattern by a given non-zero spacing; a continuous reflective layer; a pattern of dielectric material of Fabry-Perot cavity between the metal grating and the continuous reflective layer; the thickness of the patterns of dielectric material of the two-colour filters being different.

A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first surface of the metal substrate and configured to emit at least ultraviolet light; a pair of electrodes disposed to be spaced apart from each other on at least the first surface of the metal substrate, and electrically connected to the light emitting device; and an insulating layer provided between the metal substrate and the pair of electrodes. UV reflectance of the first surface of the metal body is higher than UV reflectance of the pair of electrodes.