Provided are a solar cell, a method for preparing a photovoltaic module, and a photovoltaic module. The solar cell includes: a substrate, a first dielectric layer and a first doped conductive layer. The substrate has a first surface and a second surface opposite to the first surface. The first surface includes alternating electrode regions and non-electrode regions, and transition regions, where each respective transition region of the transition regions is abutted on one side by a respective electrode region of the electrode regions and on an opposing side by a respective non-electrode region of the non-electrode regions, and has a first surface structure, the first surface structure includes a plurality of prism structures inclined towards the respective electrode region, and the plurality of the prism structures are sequentially disposed at least along an extension direction of the transition region. The first dielectric layer is formed over the respective electrode region.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

A disclosed semiconductor photodetector includes a first semiconductor layer having a first refractive index and a first band gap; a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer having a second refractive index and a second band gap; a first electrode; and a second electrode. The second refractive index is greater than the first refractive index, and the second band gap is smaller than the first band gap. The first semiconductor layer includes a p-type first region, an n-type second region, and a non-conductive third region between the first region and the second region. The second semiconductor layer includes a p-type fourth region in ohmic contact with the first electrode, an n-type fifth region in ohmic contact with the second electrode, and a non-conductive sixth region between the fourth region and the fifth region.

A solar cell assembly preparation method. In the process of preparing a conductive layer, several conductive layers separated by a first trench are formed on the substrate. After the conductive layers are formed, the separating function of second separating members and the separating function of third separating members are respectively utilized to ensure that the functional layer groups formed on one side of the conductive layers are separated by and located on two sides of an entirety formed by the second separating members and the third separating members.

A solar cell assembly preparation method. In the process of preparing a conductive layer, several conductive layers separated by a first trench are formed on the substrate. After the conductive layers are formed, the separating function of second separating members and the separating function of third separating members are respectively utilized to ensure that the functional layer groups formed on one side of the conductive layers are separated by and located on two sides of an entirety formed by the second separating members and the third separating members.

A method of manufacturing an optoelectronic or photovoltaic device, including the following successive steps: a) forming, by PLD deposition, an active layer comprising a perovskite material on the upper side of a first charge transport layer; b) depositing, by PLD, a second charge-transport layer of inorganic material on the top face of the active layer.

Provided are a perovskite precursor and a preparation method, a perovskite material and a preparation method, a perovskite thin film, a perovskite precursor slurry, a perovskite solar cell and a preparation method, and an electric device. The perovskite precursor includes a precursor substrate and doping ions. The doping ions include at least one of alkali metal ions, alkaline earth metal ions, transition metal ions, group IIIA element ions, acid radical ions, and halogen ions. At least a part of the doping ions are embedded into a crystal lattice of the precursor substrate.

A solar cell according to an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer on the p-electrode, and an n-type layer between the p-type light-absorbing layer and the n-electrode. A first region is included in the p-type light-absorbing layer from a surface on the n-type layer side toward the p-electrode. The first region includes n-type dopant. A thickness of the first region is 1500 [nm] or more and a thickness of the p-type light-absorbing layer [nm]. A concentration of the n-type dopant of the first region is 1.010.sup.14 [cm.sup.3] or more and 1.010.sup.19 [cm.sup.3] or less. The concentration of the n-type dopant of the first region and a concentration of hole of the first region satisfy 10 the concentration of the n-type dopant/the concentration of hole 5.010.sup.26.

A heterojunction solar cell and a manufacturing method thereof are provided. The manufacturing method includes the following steps: A: forming a tunnel oxide layer on a first main surface of a semiconductor substrate; B: forming a first intrinsic polysilicon layer on the tunnel oxide layer; C: forming the first intrinsic polysilicon layer into a P-type polysilicon layer by diffusion annealing; D: removing a borosilicate glass (BSG) layer formed by the diffusion annealing; E: forming a mask layer on the P-type polysilicon layer; F: performing texturing and cleaning on a second main surface of the semiconductor substrate, and removing the mask layer; G: forming a second intrinsic amorphous silicon layer on the second main surface of the semiconductor substrate; and H: forming an N-type oxygen-doped microcrystalline silicon layer on the second intrinsic amorphous silicon layer.

A heterojunction solar cell and a manufacturing method thereof are provided. The manufacturing method includes the following steps: A: forming a tunnel oxide layer on a first main surface of a semiconductor substrate; B: forming a first intrinsic polysilicon layer on the tunnel oxide layer; C: forming the first intrinsic polysilicon layer into a P-type polysilicon layer by diffusion annealing; D: removing a borosilicate glass (BSG) layer formed by the diffusion annealing; E: forming a mask layer on the P-type polysilicon layer; F: performing texturing and cleaning on a second main surface of the semiconductor substrate, and removing the mask layer; G: forming a second intrinsic amorphous silicon layer on the second main surface of the semiconductor substrate; and H: forming an N-type oxygen-doped microcrystalline silicon layer on the second intrinsic amorphous silicon layer.