The present application provides a solar cell, including: a silicon substrate, and a plurality of fingers formed on a surface of the silicon substrate. The silicon substrate is doped with antimony, and a concentration of antimony in the silicon substrate is a atom/cm.sup.3. The plurality of fingers extend in a first direction, and a density of fingers with the same polarity in a second direction perpendicular to the first direction is n/cm. n and a meet the following relationship: 35k.Math.lg an35Ig a, where k is a constant less than or equal to 2, a ranges from 1E13 to 2E17.

The present application provides a solar cell, including: a silicon substrate, and a plurality of fingers formed on a surface of the silicon substrate. The silicon substrate is doped with antimony, and a concentration of antimony in the silicon substrate is a atom/cm.sup.3. The plurality of fingers extend in a first direction, and a density of fingers with the same polarity in a second direction perpendicular to the first direction is n/cm. n and a meet the following relationship: 35k.Math.lg an35Ig a, where k is a constant less than or equal to 2, a ranges from 1E13 to 2E17.

Junctions and methods of forming junctions are provided. The junction can include an n-type doped semiconductor and a hole-selective contact layer, and the n-type doped semiconductor can include a barrier intrinsic layer. Further, the hole-selective contact layer can be deposited directly on the barrier layer, forming an interface between the hole-selective contact layer and the barrier layer. A composition of the barrier layer is chosen to tailor a Fermi level at the interface such that the Fermi level at the interface is near a valence band edge of the n-type doped semiconductor. The barrier layer can be selected from one of an intrinsic layer and a lightly doped p-type layer.

Junctions and methods of forming junctions are provided. The junction can include an n-type doped semiconductor and a hole-selective contact layer, and the n-type doped semiconductor can include a barrier intrinsic layer. Further, the hole-selective contact layer can be deposited directly on the barrier layer, forming an interface between the hole-selective contact layer and the barrier layer. A composition of the barrier layer is chosen to tailor a Fermi level at the interface such that the Fermi level at the interface is near a valence band edge of the n-type doped semiconductor. The barrier layer can be selected from one of an intrinsic layer and a lightly doped p-type layer.

A thermophotovoltaic device comprises an emitter for emitting photons towards a receiver. The thermophotovoltaic device also comprises an intermediate layer comprising a thermal insulating material with a low thermal conductivity of at most 1.4 W/m-K. The intermediate layer is positioned between the emitter and the receiver. The receiver comprising a photovoltaic cell configured to convert at least a portion of the photons into electric energy.

A thermophotovoltaic device comprises an emitter for emitting photons towards a receiver. The thermophotovoltaic device also comprises an intermediate layer comprising a thermal insulating material with a low thermal conductivity of at most 1.4 W/m-K. The intermediate layer is positioned between the emitter and the receiver. The receiver comprising a photovoltaic cell configured to convert at least a portion of the photons into electric energy.

A solar cell according to an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer provided on the p-electrode and being mainly composed of a cuprous oxide compound, an n-type layer disposed between the p-type light-absorbing layer and the n-electrode, and a compound of first metal provided between the p-type light-absorbing layer and the n-type layer. Coverage of the compound of the first metal covering the p-type light absorption layer is 10% or more and less than 100%. The first metal is one or more elements selected from the group consisting of Al, Hf, Zr, and B. The cuprous oxide compound is in direct contact with the compound of the first metal and the n-type layer.

A solar cell according to an embodiment includes a p-electrode, an n-electrode, a p-type light-absorbing layer provided on the p-electrode and being mainly composed of a cuprous oxide compound, an n-type layer disposed between the p-type light-absorbing layer and the n-electrode, and a compound of first metal provided between the p-type light-absorbing layer and the n-type layer. Coverage of the compound of the first metal covering the p-type light absorption layer is 10% or more and less than 100%. The first metal is one or more elements selected from the group consisting of Al, Hf, Zr, and B. The cuprous oxide compound is in direct contact with the compound of the first metal and the n-type layer.

A superlattice film includes a superlattice structure that is arranged between a first conductor and a second conductor and includes a plurality of superimposed layers of nanocrystals; wherein each of the layers has an array of nanocrystals which have a same energy gap, and wherein the layers are sorted by the energy gap of the nanocrystals in ascending order from the first conductor towards the second conductor, so that a maximum energy gap layer is adjacent to the first conductor and a minimum energy gap layer is adjacent to the second conductor. The superlattice film further includes at least one among an electron blocking layer interposed between the maximum energy gap layer and the first conductor, and an electron transport layer interposed between the minimum energy gap layer and the second conductor.

A superlattice film includes a superlattice structure that is arranged between a first conductor and a second conductor and includes a plurality of superimposed layers of nanocrystals; wherein each of the layers has an array of nanocrystals which have a same energy gap, and wherein the layers are sorted by the energy gap of the nanocrystals in ascending order from the first conductor towards the second conductor, so that a maximum energy gap layer is adjacent to the first conductor and a minimum energy gap layer is adjacent to the second conductor. The superlattice film further includes at least one among an electron blocking layer interposed between the maximum energy gap layer and the first conductor, and an electron transport layer interposed between the minimum energy gap layer and the second conductor.