A detector module for detecting photons includes a detector formed from a semiconductive material, the detector having a first surface, an opposing second surface, and a plurality of sidewalls extending between the first and second surfaces, and a guard band coupled to the sidewalls, the guard band having a length that extends about a circumference of the detector, the guard band having a width that is greater than a thickness of the detector such that an upper rim segment of the guard band projects beyond the first surface of the detector, the upper rim segment being folded over a peripheral region of the first surface along the circumference of the detector, the guard band configured to reduce recombinations proximate to the edges of the detector.

An aim of the present invention is to provide a technology to inhibit degradation phenomena of TFTs in an imaging panel having such TFTs in each pixel. The imaging panel captures scintillation light, which are X-rays that have passed through a specimen and been converted by a scintillator. The imaging panel includes a plurality of gate lines and a plurality of data lines. The imaging panel includes a conversion element that converts scintillation light to electric charge, a thin film transistor connected to the gate line, data line, and conversion element, and a metal wiring line connecting to the conversion element and supplying a bias voltage to the conversion element. The metal wiring line is positioned approximately parallel to the data line so as to overlap the top of the thin film transistor.

A solid-state photodetector with variable spectral response that can produce a narrow or wide response spectrum of incident light. Some embodiments include a solid-state device structure that includes a first photodiode and a second photodiode that share a common anode region. Bias voltages applied to the first photodiode and/or the second photodiode may be used to control the thicknesses of depletion regions of the photodiodes and/or a common anode region to vary the spectral response of the photodetector. Thickness of the depletion regions and/or the common anode region may be controlled based on resistance between multiple contacts of the common anode region and/or capacitance of the depletion regions. Embodiments include control circuits and methods for determining spectral characteristics of incident light using the variable spectral response photodetector.

The opto-electronic module (1) comprises a first substrate member (P); a third substrate member (B); a second substrate member (O) arranged between said first and third substrate members and comprising one or more transparent portions (ta, tb) through which light can pass, said at least one transparent portion comprising at least a first optical structure (5a;5a;5b;5b); a first spacer member (S1) comprised in said first substrate member (P) or comprised in said second substrate member (O) or distinct from and located between these, which comprises at least one opening (4a;4b); a second spacer member (S2) comprised in said second substrate member (O) or comprised in said third substrate member (B) or distinct from and located between these, which comprises at least one opening (3); a light detecting element (D) arranged on and electrically connected to said first substrate member (P); a light emission element (E) arranged on and electrically connected to said first substrate member (P); and a sensing element (8) comprised in or arranged at said third substrate member (B).

Such modules (1) are particularly suitable as sensor modules for sensing a magnitude such as a pressure.

According to an aspect, a detection device includes a plurality of optical sensors arranged on a substrate. Each of the optical sensors includes a first photodiode and a second photodiode that is coupled in series and in an opposite direction to the first photodiode.

A multilayer photoelectric converter includes a first photoelectric converter, and a second photoelectric converter. The first photoelectric converter and the second photoelectric converter are stacked in this order from a side of the multilayer photoelectric converter where light is incident. The first photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 1a. The second photoelectric converter has a sensitivity characteristic with a sensitivity having a peak at a wavelength 2a. For the multilayer photoelectric converter, the relationship 1a<2a is satisfied. The sensitivity of the second photoelectric converter at the wavelength 2a is less than the sensitivity of the first photoelectric converter at the wavelength 1a.

An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

An optoelectronic device includes a first semiconductor die, having first and second surfaces and including a first array of transceiver elements. Each transceiver element includes an optical transducer, which directs outgoing coherent optical radiation through the first surface toward a target and to receive incoming optical radiation that has been reflected from the target. A single-photon optical detector outputs electrical pulses in response to photons of the incoming optical radiation. A waveguide conveys the incoming optical radiation from the optical transducer to the single-photon optical detector. A second semiconductor die is bonded to the second surface of the first semiconductor die and includes a second array of logic circuits, which are coupled to receive and process the electrical pulses output by the single-photon optical detectors in corresponding ones of the transceiver elements.

An X-ray image pickup system (10) includes an X-ray source (16), an image pickup panel (12), a scintillator (13), and an X-ray control unit (14E). The image pickup panel includes a photoelectric conversion element (26), a capacitor (50), a thin film transistor (24), and TFT control units (14A, 14B, 14F). To the photoelectric conversion element (26), scintillation light is projected. The capacitor (50) is connected to the photoelectric conversion element (26), and accumulates charges. The thin film transistor (24) is connected to the capacitor (50). The TFT control units (14A, 14B, 14F) control an operation of the thin film transistor (24). The thin film transistor (24) includes a semiconductor active layer (32) made of an oxide semiconductor. The X-ray control unit (14E) intermittently projects X-ray to the X-ray source (16). The TFT control units (14A, 14B, 14F) cause the thin film transistor (24) to operate when the X-ray is not projected, so as to read out the charges accumulated in the capacitor (50).

A single chip including an optoelectronic device on the semiconductor layer in a first region, the optoelectronic device comprises a bottom cladding layer, an active region, and a top cladding layer, wherein the bottom cladding layer is above and in direct contact with the semiconductor layer, the active region is above and in direct contact with the bottom cladding layer, and the top cladding layer is above and in direct contact with the active region, a silicon device on the substrate extension layer in a second region, a device insulator layer substantially covering both the optoelectronic device in the first region and the silicon device in the second region, and a waveguide embedded within the device insulator layer in direct contact with a sidewall of the active region of the optoelectronic device.