A light-receiving device includes graphene including a light-receiving part; major electrodes electrically connected with the graphene, the major electrodes including a source electrode and a drain electrode, the light-receiving part being positioned between the source electrode and the drain electrode; a gate electrode electrically connected with the light-receiving part of the graphene via capacitive coupling; a circuit part electrically connected with the major electrode and the gate electrode; and an ionic substance contacting the light-receiving part of the graphene. The ionic substance is one of an anion having an acid dissociation constant of not less than 3 or a cation having an acid dissociation constant of not more than 11.

The present disclosure describes an embodiment of a thin film transistor based light sensor circuit. The thin film transistor based light sensor circuit includes two thin film transistors, in which a channel region of one of the thin film transistors includes a light sensing area and a channel region of the other thin film transistor has a capping material disposed thereon. The thin film transistor based light sensor circuit further includes a comparator device electrically coupled to the two thin film transistors and configured to detect a current difference between the thin film transistors in response to the thin film transistor with the channel region having the light sensing area being exposed to light.

A pixel circuit includes: a phototransistor configured to receive, by one region of a source and a drain, inflow of photo-carriers generated by light entering a substrate, and configured to output a voltage signal from the one region; and a blocking layer provided on another region of the drain and the source and on a side of a channel far from a surface, and configured to prevent the photo-carriers from directly flowing into the other region. The phototransistor causes a sub-threshold current to flow between the source and the drain in a pinch-off state. Each of the source and the drain of the phototransistor is periodically reset to a reset voltage. The reset voltage is set to a voltage between a voltage at which a dark current of the phototransistor becomes zero and a voltage at which a bias voltage of the phototransistor becomes zero.

A detector of terahertz (THz) energy includes a MOSFET having an extended source region, and a channel region depleted of free carriers, which MOSFET operates in a sub-threshold voltage state and has an output that is an exponential function of THz energy supplied to the gate.

A photodetecting device and method of using the same are provided. The photodetecting device includes a transistor, a silicon nano-channel and a filter dye layer. The transistor includes a source, a drain and a gate. The silicon nano-channel connects the source and the drain, and is configured to receive light. The filter dye layer is over a light-receiving surface of the silicon nano-channel.

A thin film transistor array panel includes a substrate, an insulation layer, a first semiconductor, and a second semiconductor. The insulation layer is disposed on the substrate and includes a stepped portion. The first semiconductor is disposed on the insulation layer. The second semiconductor is disposed on the insulation layer and includes a semiconductor material different than the first semiconductor. The stepped portion is spaced apart from an edge of the first semiconductor.

A pixel circuit includes: a phototransistor configured to receive, by one region of a source and a drain, inflow of photo-carriers generated by light entering a substrate, and configured to output a voltage signal from the one region; and a blocking layer provided on another region of the drain and the source and on a side of a channel far from a surface, and configured to prevent the photo-carriers from directly flowing into the other region. The phototransistor causes a sub-threshold current to flow between the source and the drain in a pinch-off state. Each of the source and the drain of the phototransistor is periodically reset to a reset voltage. The reset voltage is set to a voltage between a voltage at which a dark current of the phototransistor becomes zero and a voltage at which a bias voltage of the phototransistor becomes zero.

A pixel circuit includes: a phototransistor configured to receive, by one region of a source and a drain, inflow of photo-carriers generated by light entering a substrate, and configured to output a voltage signal from the one region; and a blocking layer provided on another region of the drain and the source and on a side of a channel far from a surface, and configured to prevent the photo-carriers from directly flowing into the other region. The phototransistor causes a sub-threshold current to flow between the source and the drain in a pinch-off state. Each of the source and the drain of the phototransistor is periodically reset to a reset voltage. The reset voltage is set to a voltage between a voltage at which a dark current of the phototransistor becomes zero and a voltage at which a bias voltage of the phototransistor becomes zero.

A photosensitive device and a display panel are provided. The photosensitive device includes a substrate and a photosensitive functional layer. The photosensitive functional layer includes a thin film transistor layer and a quantum dot layer. The quantum dot layer is configured to emit an excitation light under an excitation of an external light. A photo-generated current efficiency of the photosensitive device can be improved, and stability and versatility of the photosensitive device can also be improved.

A photosensitive device and a display panel are provided. The photosensitive device includes a substrate and a photosensitive functional layer. The photosensitive functional layer includes a thin film transistor layer and a quantum dot layer. The quantum dot layer is configured to emit an excitation light under an excitation of an external light. A photo-generated current efficiency of the photosensitive device can be improved, and stability and versatility of the photosensitive device can also be improved.