The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

An optical device includes a first substrate, a second substrate, a first transmitting portion, N light-emitting portions, and a light-receiving portion. The first transmitting portion is disposed in the first substrate. The N light-emitting portions are disposed in the first substrate, and the N is an integer of 2 or more. The light-receiving portion is configured to receive light passing through the first transmitting portion and is disposed in the second substrate.

The invention relates to a measuring system, comprising a substrate (10), which has a quantum dot layer (16), which is arranged on the substrate and which comprises an emission segment (30) having a first plurality of quantum dots (34), which first plurality has an average first energy gap, wherein the first plurality can emit radiation corresponding to the average first energy gap, wherein the quantum dot layer (16) comprises at least one absorption segment (32) having a second plurality of quantum dots (36) and the second plurality has an average second energy gap that is less than the average first energy gap so that radiation (60) emitted by the emission segment (30) can be absorbed by the at least one absorption segment (32).

After sequentially forming a first multilayer structure comprising a first set of semiconductor layers suitable for formation of a photodetector, an etch stop layer and a second multilayer structure comprising a second set of semiconductor layers suitable for formation of a light source over a substrate, the second multilayer structure is patterned to form a light source in a first region of the substrate. A first trench is then formed extending through the etch stop layer and the first multilayer structure to separate the first multilayer structure into a first part located underneath the light source and a second part that defines a photodetector located in a second region of the substrate. Next, an interlevel dielectric (ILD) layer is formed over the light source, the photodetector and the substrate. A second trench that defines a microfluidic channel is formed within the ILD layer and above the photodetector.

Image display devices with suppressed generation of diffracted light are disclosed. In one example, an image display device includes pixels arranged two-dimensionally, and a pixel region including some of the pixels that has transmissive windows that transmit visible light and have different sizes. The pixels include a self-light-emitting element, a light emitting region in which light is emitted by the self-light-emitting element, and a non-light emitting region including the transmissive window.

An optical sensing apparatus, a method for manufacturing an optical sensing apparatus, and an electronic device can improve the optical detection accuracy and user experience. The optical sensing apparatus includes: a sensor chip configured to receive an incident light signal for optical detection; and a transparent conductive layer provided above the sensor chip and connected to a grounding terminal of the sensor chip, where the transparent conductive layer is configured to be coupled with an electromagnetic wave in an environment, and transmit the electromagnetic wave to the grounding terminal of the sensor chip.

The technology disclosed in this patent document can be used to construct devices with opto-electronic circuitry for sensing and identification applications, to provide untethered devices for deployment in living objects and other applications, and to provide fabrication techniques for making such devices for commercial production. As illustrated by specific examples disclosed herein, the disclosed technology can be implemented to provide fabrication methods, substrates, and devices that enable wireless, inorganic cell-scaled sensor and identification systems that are optically-powered and optically-readout.

A portable electronic device includes a foldable housing; a display; an illuminance sensor; a state detection sensor; a memory; and a processor. Based on data received from the state detection sensor, the portable electronic device is recognized to be in the folded state. Responsive to the portable electronic device being in a calibration trigger state which includes the folded state, a first image is displayed in a sensor area of a first display area located on the illuminance sensor, and a second image is displayed in an area of the second display area facing the sensor area. An illuminance value is calculated based on data received from the illuminance sensor while the first image and the second image are displayed, and then compared to a reference value stored in the memory to calculate a calibration value for calibrating measured illuminance values of the illuminance sensor.

The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device A1 of the present invention includes: a substrate 1, including a semiconductor material, and including a main surface 111 and a back surface 112; a semiconductor light-emitting element 7A at the substrate; a semiconductor light-receiving element 7B at the substrate; a conductive layer 3, conducting the semiconductor light-emitting element 7A and the semiconductor light-receiving element 7B; and an insulating layer 2 between at least a portion of the conductive layer 3 and the substrate; wherein the substrate 1 includes a recess 14 recessed from the main surface 111 and including a bottom surface 142A of a light-emitting side recess where the semiconductor light-emitting element 7A is disposed, and a bottom surface 142B of a light-receiving side recess where the semiconductor light-receiving element 7B is disposed; a light-emitting side transparent portion 18A for light from the semiconductor light-emitting element 7A to pass through the bottom surface 142A of the light-emitting side recess to the back surface 112; and a light-receiving side transparent portion 18B for light from the back surface 112 to pass through the bottom surface 142B of the light-receiving side recess to the semiconductor light-receiving element 7B.

A light emitting device disclosed herein includes at least one light source and an array of coupling lightguide strips continuous with a lightguide region of a lightguide formed from a film, light extraction features, a cladding layer in the light emitting region of the film, and a light input surface defined by the stacked bounding edges of the coupling lightguide strips, wherein an area percentage of the light input surface comprising a core region is at least 98 percent. In another embodiment, the light from the at least one light source is not directly coupled into the cladding layer at the light input surface. In a further embodiment, a total thickness of the coupling lightguide strips at the light input surface is less than (n) times a thickness of the lightguide region of the lightguide where (n) is the number of coupling lightguide strips.