A high-performance optical device is provided. An optical device includes a first transmitting portion that is disposed at the center of a predetermined area in a first substrate, a light-receiving portion that receives light passing through the first transmitting portion, N light-emitting portions (N is an integer of 2 or more) that are disposed around the first transmitting portion in the predetermined area, and a control circuit that controls the light-emitting portions. The control circuit is functionally divided into N control portions, namely, first to N-th control portions. The N control portions are disposed in areas overlapping the N light-emitting portions, respectively, when viewed from above. The optical device can reduce noise light and achieve a high S/N ratio, and also the sensitivity of the optical device can be improved.

In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

The present invention is related to solid state light emitting diodes (LEDs), photodetector/photovoltaic devices, displays, applications and methods for making the same. As demonstrated experimentally, the LEDs, as disclosed herein, have high light emission efficiency, high contrast, high brightness, low ambient light reflection, low light glare, and a tunable display viewing angle. The same LED disclosed here can be used as high efficiency displays and high efficiency photovoltaic device or photodetectors. This means that the same device, where used in array form, can be used as the display (LED operation mode) and power supply (photovoltaic device mode) and camera (photodetector and imaging mode).

An optical sensor includes a pattern extending in a first direction substantially parallel to a line connecting two land centers that are connected to the light emitting unit. The pattern in the first direction is formed on at least one of right and left relative to the line connecting the two land centers. The optical sensor also includes a pattern extending in a direction between lands of the light emitting unit. The direction between the lands of the light emitting unit is a second direction substantially perpendicular to the first direction.

The technology disclosed in this patent document can be used to construct devices with opto-electronic circuitry for sensing and identification applications, to provide untethered devices for deployment in living objects and other applications, and to provide fabrication techniques for making such devices for commercial production. As illustrated by specific examples disclosed herein, the disclosed technology can be implemented to provide fabrication methods, substrates, and devices that enable wireless, inorganic cell-scaled sensor and identification systems that are optically-powered and optically-readout.

The present invention discloses an integrated photodiode manufacturing method, a photodiode, and a photoelectric keyboard; the said method comprises the provision of a parallel support, and there is a plurality of pins on the said parallel support; on the parallel support, the infrared light chip and the visible light chip are fixed and installed; the electrodes of the said infrared chip and the said visible light chip are connected to the corresponding said pins respectively to form the electrical circuits independently with each other; the said infrared light chip and the said visible light chip are packaged with the packaging adhesive and/or the fluorescent adhesive to form the photodiode. The said packaging adhesive is transparent or translucent adhesive, and the said fluorescent adhesive is photoluminescence fluorescent material adaptable to the color of the said visible light chip; the packaged photodiode is baked and cured to form the photodiode integrating infrared light and visible light. By the present method, a kind of photodiode emitting infrared light and visible light simultaneously can be manufactured. In application, the present integrated photodiode can reduce the amount of components and reduce the cost.

The invention relates to a light-emitting component. The light-emitting component comprises an emitter group of light-emitting semiconductor chips configured to generate different light radiations and an electronic semiconductor chip for driving the light-emitting semiconductor chips. The light-emitting semiconductor chips are arranged on the electronic semiconductor chip. The electronic semiconductor chip comprises a plurality of integrated photodiodes. Each light-emitting semiconductor chip of the emitter group is associated with at least one photodiode of the electronic semiconductor chip in order to detect the light radiation generated by the respective light-emitting semiconductor chip.

An electronic device is provided. The electronic device includes a cover including a transparent portion, an optical sensor that is spaced from the cover and includes a light-emitting portion configured to transmit first light portions to the outside through the transparent portion of the cover and at least one light-receiving portion spaced from the light-emitting portion, configured to receive second light portions through the transparent portion, and surrounding the outside of the light-emitting portion, a first optical coating disposed on one surface of the transparent portion and facing the light-emission portion, and a second optical coating spaced from the first optical coating, disposed on one surface of the transparent portion, and facing the at least one light-receiving portion. The first optical coating includes patterns that are concentric around a location overlapping the light-emitting portion.

An optoelectronic device has a transparent carrier. The carrier has a two-dimensional arrangement of optoelectronic semiconductor chips. The optoelectronic semiconductor chips are electrically contacted by conductor tracks arranged on the carrier. At least some of the optoelectronic semiconductor chips are operable as light emitters in order to shine light at an eye. At least some of the optoelectronic semiconductor chips are operable as light receivers in order to detect light reflected at the eye.