Addressable actuator and arrays thereof are described. Actuators may be dielectric elastomer actuators (DBAs). An addressable actuator may include a compliant substrate, with an optical receiver integrated with a first region of the compliant substrate and an actuator integrated with a second region of the compliant substrate, with the optical receiver coupled to the actuator. The optical receivers may comprise percolating networks of semiconductor materials, such as photoconductive channels of zinc oxide nanowires, which may be embedded in a compliant substate, or one or more compliant layers (which may be formed on a substrate). Compliant substrates or layers may include complaint materials such as an elastomer. An actuator array may comprise multiple of the actuators, with each actuator being independently optically addressable. A system may include light emitting devices optically coupled to respective optical receivers to control actuation of the actuators using light.

Provided are a solar cell and a light emitting device with low leakage current and low cost, using ZnO fine particles. A p-type ZnO layer (p-type layer) made primarily of p-type ZnO fine particles is formed. P-side electrodes are formed at a plurality of regions on the p-type layer. A thin insulating layer is formed between an n-type layer and the p-type layer. In the insulating layer, openings are formed at regions A each not overlapping the p-side electrodes and being apart from them in a plan view. In the configuration, by thus making the p-side electrodes apart from the regions A, the length of a current path in the p-type layer can be made substantially larger than the layer thickness.

An energy harvesting electro-optic display is disclosed comprising a photovoltaic cell that converts part of the incident light to electric current or voltage, wherein the electric current or voltage is used for the operation of the electro-optic display upon the conversion or stored in a storage component to be used for the operation of the display.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength Ac shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.

The invention relates to an optoelectronic device including a control circuit, a pixel comprising a photodetector, a light-emitting diode, and an intermediate region interposed between the photodetector and the light-emitting diode. The photodetector is sensitive to a detection wavelength .sub.2. The light-emitting diode comprises an active stack with a cutoff wavelength .sub.c shorter than .sub.2 and a buried electrode interposed between an interconnection stack of the circuit and the active stack, and covers a detection surface of the photodetector. The device furthermore comprises a via passing right through the active stack and extending as far as the interconnection stack; an electrical contact passing right through the active stack, in contact with the buried electrode; an electrical path electrically connecting the buried electrode to the control circuit and including the electrical through-contact and the via. The intermediate region is devoid of metal and the buried electrode is transparent to .sub.2.

A carrier-free micro light source image sensing device includes an image sensor, a light source module, and a packaging layer. The image sensor is placed on a first positioning area of a temporary carrier; the light source module is adjacent to one side of the image sensor. The light source module includes a supporter and a light-emitting element. The light source module is placed on a second positioning area of a temporary carrier. The altitude of a light-emitting face of the light source element is lower than or equal to that of a sensing face of the image sensor. The packaging layer covers the image sensor and the light source module but reveals the sensing face and the light-emitting face. The temporary carrier is removed after the packaging layer is cured. The present invention can minimize the size of the light source image sensing device, simplify the production process, improve the overall product quality, increase the signal-to-noise ratio, and enhance image quality.

According to an aspect, a detection device includes: an optical sensor; a first light source configured to emit first light to the optical sensor; a second light source configured to emit second light different from the first light to the optical sensor; and a detection circuit configured to acquire a first detection value when the first light is emitted to the optical sensor and a second detection value when the second light is emitted to the optical sensor. A light emission period of the second light source is relatively shorter than a light emission period of the first light source.

An optoelectronic device including at least an emissive component including at least a first electrode, a second electrode, and an emissive element disposed between an emissive face of the optoelectronic device and the second electrode, a photodetector component such that the second electrode of the emissive component is disposed between the photodetector component and the emissive element. The emissive component and the photodetector component are superimposed one above the other, and the second electrode has at least one hole passing through it, disposed vertically in line with at least a part of a detection surface of the photodetector component and/or a part of the detection surface of the photodetector component is not disposed vertically in line with the second electrode and form a ring located at the external edges of the detection surface of the photodetector component.

According to one embodiment, a semiconductor device includes: a substrate including a first surface extending in a first direction and a second direction; a first transistor; a light receiver; a light emitter provided on the light receiver; an input terminal provided on the first surface of the substrate; a first conductor configured to electrically couple a source electrode of the first transistor and a first electrode of the light receiver; a second conductor configured to electrically couple a gate electrode of the first transistor and a second electrode of the light receiver; and a third conductor configured to couple a third electrode of the light emitter and the input terminal, wherein the light emitter and the input terminal are provided at positions overlapping with each other in a third direction, and the third conductor is provided inside the substrate.

According to an embodiment, a method of manufacturing an optical sensor package includes forming a partition wall in each of substrate units on a substrate strip, mounting sensor elements on each of the substrate units, the sensor elements including a light-emitting unit and a light-receiving unit, and forming a molding member, using an encapsulant, in each of the substrate units, wherein the partition wall is arranged between the light-emitting unit and the light-receiving unit.