A hybrid photonic-electric interposer that includes an electrical part having electrical signal paths and a photonic part having photonic signal paths, with the electrical signal paths and the photonic signal paths being formed in parallel planes. The photonic part includes a plurality of sets of light emitting devices, waveguides, and photodetectors. In each one of said sets, the respective light emitting device, waveguide, and photodetector are coplanar with one another. In some instances, the photonic part may be disposed underneath the electrical part with the waveguides of the photonic part arrayed under metal interconnect layers of the electrical part and surrounded by a low refractive index dielectric. The light emitting devices of the photonic part may be light emitting diodes or lasers, and each of the light emitting devices may be configured to be modulated directly by an electrical signal to transmit photonic signals according to a non-return-to-zero modulation scheme.

An interconnect substrate includes a core layer that is translucent, a first photoelectric conversion member disposed on a first surface of the core layer, a first interconnect layer electrically connected to the first photoelectric conversion member, a second photoelectric conversion member disposed on a second surface of the core layer that is opposite the first surface, and a second interconnect layer electrically connected to the second photoelectric conversion member, wherein the first photoelectric conversion member and the second photoelectric conversion member are arranged at such positions as to exchange optical signals with each other through the core layer.

An optocoupler includes a light output chip and a light-sensing chip. A light-receiving surface of the light-sensing chip is disposed to face a light output surface of the light output chip. The light-sensing chip and the light output chip are a green light-emitting diode and a blue light-emitting diode, respectively. Accordingly, the optocoupler has a stable output performance at a working temperature ranging from 55 C. to 150 C. and a high response frequency.

A photo-detecting device includes a first semiconductor layer, a second semiconductor layer located on the first semiconductor layer, a light-absorbing layer located between the first semiconductor layer and the second semiconductor layer, an insulating layer located on the second semiconductor layer, and an electrode structure located on the insulating layer. The second semiconductor layer includes a first region having a first conductivity-type and a second region having a second conductivity-type different from the first conductivity-type. The first region is surrounded by the second region, and includes a geometric center and an interface between the first region and the second region. The insulating layer covers the first region and the second region. The electrode structure includes an outer sidewall located on the second region. In a top view, the interface is located between the geometric center and the outer sidewall.

The present disclosure provides a visible light communication device, a display substrate, a display device, and a manufacturing method of the display substrate. The visible light communication device includes: a protrusion structure arranged on a base substrate and protruding toward a photosensitive side of the visible light communication device; a first electrode covering the protrusion structure; a visible light sensing layer arranged at a side of the first electrode away from the protrusion structure; and a second electrode arranged at a side of the visible light sensing layer away from the first electrode. A surface of each of the first electrode, the visible light sensing layer and the second electrode away from the base substrate is provided with a protrusion facing the photosensitive side of the visible light communication device due to the protrusion structure.

Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.

Devices and methods for analyzing polymer arrays formed on integrated surfaces of microLEDs. One microarray includes a plurality of individually controllable microLED elements, a plurality of photodetector elements, an integrated surface, and a CMOS driver chip. Each microLED element is paired with a photodetector element. The CMOS driver chip controls activation of the microLED elements and the photodetector elements.

The semiconductor device includes a high electron mobility transistor (HEMT) and a light emitter. The HEMT has a nucleation layer, buffer layer, channel layer, barrier layer, source and drain electrodes, p-doped III-V layer, and gate electrode. The nucleation layer is on a substrate, with the buffer and channel layers stacked above it. A 2DEG region forms at the interface between the channel and barrier layers. The source and drain electrodes are on the barrier layer, and the p-doped III-V layer is formed to achieve a desired threshold voltage. The gate electrode is placed between the source and drain. The light emitter is positioned above the HEMT, emitting an optical signal synchronized with the gate drive signal to create a synchronous optoelectronic-gated switch.

An optocoupler includes a GaN-based Light Emitting Diode (LED) and a GaN-based photo-detector, where at least one of the LED and photo-detector is a flip chip. In some embodiments, the photo-detector comprises a GaN-based LED configured to operate as a photo-detector.

The semiconductor light-emitting device includes: a substrate; a light-receiving chip that includes a light-receiving element having a light-receiving surface formed on the chip surface; an edge-emitting chip that has a first light-emitting surface that emits first laser beam and a second light-emitting surface that emits second laser beam in an opposite direction, and that is joined to a position different from the light-receiving surface on the chip surface; a sealing member with a material through which the first and second laser beams can pass, the sealing member covering the edge-emitting chip and the light-receiving chip; and a reflection part provided in the sealing member and that reflects at least a portion of the second laser beam toward the light-receiving surface. The light-receiving surface is formed in a position on the chip surface for receiving at least a part of the reflected light by the reflection part.