A thermoelectric conversion material made of a polycrystalline material represented by a composition formula (1) shown below and having an MgAgAs type crystal structure is provided. An insulating coat is provided on at least one surface of the polycrystalline material. Composition formula (1): (A.sub.a1Ti.sub.b1).sub.xD.sub.yX.sub.100-x-y, wherein 0.2≦a1≦0.7, 0.3≦b1≦0.8, a1+b1=1, 30≦x≦35, 30≦y≦35 hold, wherein A is at least one element selected from the group consisting of Zr and Hf, D is at least one element selected from the group consisting of Ni, Co, and Fe, and X is at least one element selected from the group consisting of Sn and Sb.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

A method of thermoelectric power generation by converting heat to electricity via the use of a ZrCoBi-based thermoelectric material, wherein a thermoelectric conversion efficiency of the ZrCoBi-based thermoelectric material is greater than or equal to 7% at a temperature difference of up to 800 K.

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of Ba.sub.1-a-b-cSr.sub.bCa.sub.cK.sub.aMg.sub.2Bi.sub.2-dSb.sub.d. In the chemical formula, the following relationships are satisfied: 0.002≤a≤0.1, 0≤b, 0≤c, a+b+c≤1, and 0≤d≤2. In addition, the thermoelectric conversion material has a La.sub.2O.sub.3-type crystal structure.

A thermoelectric conversion module is disclosed that corrects the difference in thermal resistance between a P-type thermoelectric conversion member and an N-type thermoelectric conversion member. In this thermoelectric conversion module, since insulators included in the P-type thermoelectric conversion member and the N-type thermoelectric conversion member have a different thermal resistance, it is possible to correct the difference in thermal resistance between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element.

A thermoelectric conversion element that can efficiently make a temperature difference across a thermoelectric conversion material is provided. In the thermoelectric conversion element, on a first surface of a thermoelectric conversion module comprising a P-type thermoelectric element, an N-type thermoelectric element, and an electrode, a thermally conductive resin layer A and a thermally conductive resin layer B having a lower thermal conductivity than the thermally conductive resin layer A are provided in an alternating manner so as to be in direct contact with the first surface, and on a second surface on the opposite side of the first surface of the thermoelectric conversion module, a thermally conductive resin layer a and a thermally conductive resin layer b having a lower thermal conductivity than the thermally conductive resin layer a are provided in an alternating manner so as to be in direct contact with the second surface.

A method for obtaining copper arsenic chalcogen derived nanoparticles, including selecting a first precursor material from the group comprising copper, arsenic, antimony, bismuth, and mixtures thereof, selecting a second material from the group comprising sulfur, selenium, tellurium, and mixtures thereof, and then reacting both precursors in a solvent medium at conditions conducive to the formation of copper arsenic chalcogen derived nanoparticles.

A semiconductor structure comprises one or more semiconductor devices, each of the semiconductor devices having two or more electrical connections; one or more first conductors connected to a first electrical connection on the semiconductor device, the first conductor comprising a first material having a positive Seebeck coefficient; and one or more second conductors connected to a second electrical connection on the semiconductor device, the second conductor comprising a second material having a negative Seebeck coefficient. The first conductor and the second conductor conduct electrical current through the semiconductor device and conduct heat away from the semiconductor device.

A method of forming a thermoelectric device structure and the resultant thermoelectric device structure. The method forms a first pattern of epitaxial thermoelectric elements of a first conductivity type on a first semiconductor substrate, forms a second pattern of epitaxial thermoelectric elements of a second conductivity type on a second semiconductor substrate, separates the epitaxial thermoelectric elements of the first conductivity type and places the epitaxial thermoelectric elements of the first conductivity type and the epitaxial thermoelectric elements of the second conductivity type on a heat sink, and integrates the heat sink to a device substrate including an electronic device to be cooled.

A thermoelectric conversion material expressed by a chemical formula X.sub.3T.sub.3-yT′.sub.ySb.sub.4 (0.025≦y≦0.5), wherein the X includes one or more elements selected from Zr and Hf, the T includes one or more elements selected from Ni, Pd, and Pt, while including at least Ni, and the T′ includes one or more elements selected from Co, Rh, and Ir.