The invention relates to an optoelectronic device (1) comprising at least one first light source (100) configured to emit a first light beam (101) emitting at at least a first wavelength .sub.1 and emitted in at least one direction referred to as the first emission direction (110), the device being characterized in that it furthermore comprises at least one first reflector (150) bordering the first light source, configured to reflect in a first direction of reflection of the light rays with the first wavelength .sub.1 emitted in the first emission direction, and in that the at least one first reflector comprises a plurality of first passive nanowires (151).

A light-emitting device package includes a frame including one side on which a first electrode is formed and the other side on which a second electrode is formed, an LED chip including a first conductive connection pad electrically connected to the first electrode and a second conductive connection pad electrically connected to the second electrode, a reflective member disposed on the frame, forming a cavity for accommodating the LED chip therein, and reflecting light emitted from the LED chip, and a wavelength conversion member filled in the cavity to cover the LED chip, wherein the reflective member includes a first side and a second side different from the first side, and a first height of the first side and a second height of the second side are formed to be different from each other.

The invention relates to an optoelectronic device (1) comprising at least one first light source (100) configured to emit a first light beam (101) emitting at at least a first wavelength .sub.1 and emitted in at least one direction referred to as the first emission direction (110), the device being characterized in that it furthermore comprises at least one first reflector (150) bordering the first light source, configured to reflect in a first direction of reflection of the light rays with the first wavelength .sub.1 emitted in the first emission direction, and in that the at least one first reflector comprises a plurality of first passive nanowires (151).

A method for etching a semiconductor structure is provided, the semiconductor structure includes a sub-surface quantum structure of a first III-V semiconductor material, beneath a surface layer of a second III-V semiconductor material having a charge carrier density of less than 510.sup.17 cm.sup.3. The sub-surface quantum structure may include, for example, a quantum well, or a quantum wire, or a quantum dot. The method includes the steps of exposing the surface layer to an electrolyte, and applying a potential difference between the first III-V semiconductor material and the electrolyte, to electrochemically etch the sub-surface quantum structure to form a plurality of nanostructures, while the surface layer is not etched. A semiconductor structure, uses thereof, and devices incorporating such semiconductor structures are further provided.

A display device may include: a base layer including a display area and a non-display area; and a plurality of pixels provided on the display area, and each including a plurality of sub-pixels. Each of the sub-pixels may include a pixel circuit layer, and a display element layer including an emission area formed to emit light, and a non-emission area provided around a perimeter of the emission area. The display element layer may include: a partition wall provided on the emission area of each of the sub-pixels; a bank provided on the non-emission area of each sub-pixel, and disposed on a surface equal to a surface on which the partition wall is disposed; a first electrode and a second electrode provided on the partition wall and spaced apart from each other; and at least one light emitting element provided between the first and second electrodes in the emission area of each sub-pixel, and configured to emit the light.

Disclosed is a polarization-intensity coupled light emitting device. In the light emitting device, a semiconductor structure is configured to generate light in response to carrier injection; a spin injector is configured to inject carriers into the semiconductor structure, wherein the light generated by the semiconductor structure has a circular polarization state determined by the magnetization state of the spin injector; a magnetization controller is configured to change the magnetization state of the spin injector; and a chiral metasurface is configured to make differential response to left-handed circularly polarized light component and right-handed circularly polarized light component of the light generated by the semiconductor structure. When the magnetization direction of spin injector is switched, both intensity and circular polarization of the light from the light emitting device can be modulated simultaneously.

Disclosed is a spin light emitting device based on two-dimensional material. The light emitting device comprises: a two-dimensional structure configured to emit circularly polarized light in response to spin-polarized carrier injection, wherein the two-dimensional structure is a two-dimensional Van der Waals heterostructure; a spin injector configured to inject spin-polarized carriers into the two-dimensional Van der Waals heterostructure, wherein the light emitted by the two-dimensional structure has a circular polarization state determined by the magnetization state of the spin injector; and a magnetization controller configured to change the magnetization state of the spin injector. The spin-based light emitting device emits circularly polarized light or single photons on the basis of two-dimensional material at room temperature without introducing a magnetic field, and has the capability of electrical control.

The invention relates to a radiation-emitting semiconductor chip, having: a semiconductor body comprising an active region which is designed to generate electromagnetic radiation; a resonator which comprises a first end region and a second end region; and at least one cut-out in the semiconductor body, said cut-out passing completely through the active region, wherein: the active region is situated in the resonator, and the cut-out defines a reflectivity for the electromagnetic radiation. The invention also relates to a radiation-emitting semiconductor component, a method for producing a radiation-emitting semiconductor chip, and a method for producing radiation-emitting semiconductor components.

A quantum light source includes a quantum emitter located within both a bullseye cavity and a Fabry-Perot cavity. The Fabry-Perot cavity is formed from first and second mirrors that face each other to define an optical axis extending therebetween. The bullseye cavity lies in a plane perpendicular to the optical axis and in between the first and second mirrors. The quantum emitter may be a quantum dot, a point defect in a crystal (e.g., nitrogen-vacancy center in diamond), an atom, or another type of quantum system. Spontaneous emission from the quantum emitter is strongly coupled into a mode of the Fabry-Perot cavity while the bullseye cavity uses destructive interference to prevent emission of photons along directions transverse to the axis of the Fabry-Perot cavity. Light leaks out of the Fabry-Perot cavity into a well-defined traveling-wave mode that can be efficiently coupled to an optical fiber.

A light emitting device comprising a germanium first layer; a nucleation layer; a buffer layer comprising a III-V composition; and an active layer. The sum product of As concentration and layer thickness in each of the layers is less than 20%. This enables the devices to be fabricated in an environment which must be free, or substantially free, of arsenic.