A photon source comprising: a quantum dot; and an optical cavity, the optical cavity comprising: a diffractive Bragg grating DBG; and a planar reflection layer, the DBG comprising a plurality of concentric reflective rings surrounding a central disk and at least one conductive track extending from the central disk across the plurality of concentric rings, the quantum dot being provided within the central disk and the planar reflection layer being provided on one side of the DBG to cause light to be preferentially emitted from the opposing side of the DBG.

A light-emitting element array according to the present technology includes: a light-emitting element group; a first wire; and a second wire. The light-emitting element group includes a plurality of first light-emitting elements and a plurality of second light-emitting elements that are arrayed in a planar manner to form a light-emitting element surface. The first wire extends in a direction parallel to the light-emitting element surface, has a region overlapping with the plurality of first light-emitting elements and a region overlapping with the plurality of second light-emitting elements as viewed from a direction perpendicular to the light-emitting element surface, is electrically connected to the plurality of first light-emitting elements, and is not electrically connected to the plurality of second light-emitting elements. The second wire extends in a direction parallel to the light-emitting element surface, has a region overlapping with the plurality of first light-emitting elements and a region overlapping with the plurality of second light-emitting elements as viewed from a direction perpendicular to the light-emitting element surface, is electrically connected to the plurality of second light-emitting elements, and is not electrically connected to the plurality of first light-emitting elements.

A light-emitting element includes a first reflection layer having a first reflectance; a second reflection layer having a second reflectance greater than the first reflectance; a first opening in the second reflection layer; a multi-layer light-emitting structure disposed between the first reflection layer and the second reflection layer; a light-transmitting semiconductor layer disposed on the first reflection layer and having an upper light-extracting surface, wherein the first reflection layer is closer to the upper light-extracting surface than the second reflection layer; and a first conductive pad disposed in the first opening, electrically connected to the multi-layer light-emitting structure; wherein the first reflection layer includes a Bragg reflector containing semiconductor material.

The present application discloses a display panel and a display apparatus. The display panel includes: a first substrate and a second substrate, and an isolation structure and a plurality of light-emitting devices between the first substrate and the second substrate, the second substrate and the first substrate being both connected to the isolation structure, the first substrate, the isolation structure and the second substrate forming a plurality of excitation cavities, and each of the light-emitting devices being in one of the excitation cavities; a quantum dot layer including quantum dots, in the excitation cavities and on a side of the light-emitting devices facing away from the first substrate; where sidewalls of the excitation cavities are provided with a reflection portion, at least a part of the reflection portion covers at least a part of the first substrate and at least a part of the second substrate.

A semiconductor light-emitting device and a manufacturing method for same. The manufacturing method for the semiconductor light-emitting device comprises: forming a dielectric layer on a substrate, the dielectric layer being provided with a plurality of openings exposing the substrate; performing epitaxial growth on the substrate using the dielectric layer as a mask to form first reflectors in the openings of the dielectric layer; growing a light-emitting structure on the side of each first reflector away from the substrate; and forming a second reflector on the side of the light-emitting structure away from the first reflector. The manufacturing process can be simplified.

A light-emitting device includes a first nitride semiconductor structure; a stress relief structure on the first nitride semiconductor structure including a plurality of narrow band gap layers and a plurality of wide band gap layers alternately stacked, wherein one of the plurality of wide band gap layers includes a plurality of wide band gap sub-layers and one of the plurality of wide band gap sub-layers includes aluminum; an active structure on the stress relief structure including a plurality of quantum well layers and a plurality of barrier layers alternately stacked, wherein one of the plurality of barrier layers includes a plurality of barrier sub-layers and one of the plurality of barrier sub-layers includes aluminum, an aluminum composition of the wide band gap sub-layer is greater than or equal to that of the barrier sub-layer, and an average aluminum composition of the wide band gap layer is greater than that of the barrier layer; and an electron blocking structure on the active structure.

In an embodiment a radiation emitting semiconductor body includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active region located between the first semiconductor region and the second semiconductor region, wherein the active region comprises InGaAlP, wherein the first conductivity type is n-conductive and the second conductivity type is p-conductive, wherein the active region has a larger band gap in an edge region of the semiconductor body than in a central region of the semiconductor body, and wherein a band gap of the second semiconductor region in the edge region and in the central region is the same.

This application is directed to a flip light emitting diode chip and a manufacturing method therefor. Said chip comprises a substrate, an N-type semiconductor layer, an active layer, a P-type semiconductor layer, a transparent conductive layer, a transparent insulating layer, a reflective electrode, a connection electrode and DBR layer. The N-type semiconductor layer, active layer and ss P-type semiconductor layer are sequentially stacked on the substrate. The transparent conductive layer and transparent insulating layer are sequentially stacked on the P-type semiconductor layer. A plurality of through holes are provided in the transparent insulating layer, and includes a plurality of rows of first through holes. The first through holes in the same row have the same distance (d) to a groove provided on the P-type semiconductor layer and in a direction away from the groove. The sum of the cross-sectional areas of the first through holes in each row gradually increases.

A light-emitting device includes: a first semiconductor layer having a first electric conductivity type; a second semiconductor layer provided between the first semiconductor layer and a second electrode and having a second electric conductivity type; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; an insulating layer provided along a side surface of the first semiconductor layer; and a metal layer provided in contact with the insulating layer and along the side surface of the first semiconductor layer and that reflects light outputted from the first electrode side. The metal layer includes a first end in a first direction directed from the light-emitting layer toward the first semiconductor layer. The first semiconductor layer includes a second end in the first direction. In the first direction, a position of the first end is equal to or different from a position of the second end.

Disclosed are a semiconductor light-emitting device and a preparation method of the semiconductor light-emitting device. The preparation method of the semiconductor light-emitting device includes: forming a mask layer on a substrate, the mask layer is provided with a plurality of openings exposing the substrate; etching the substrate at each of the plurality of openings to form a first groove, and forming a first reflector in the first groove; epitaxially growing a light-emitting structure on the first reflector, and the light-emitting structure includes a first conductive type semiconductor layer, a multiple quantum well layer and a second conductive type semiconductor layer epitaxial grown in sequence; forming a second reflector in one side of the light-emitting structure away from the first reflector.