The present disclosure advances the art by providing a method and system for forming electronic devices. In particular, and by example only, methods are described for forming devices for harvesting energy in the terahertz frequency range on flexible substrates, wherein the methods provide favorable accuracy in registration of the various device elements and facilitate low-cost R2R manufacturing.

Systems, methods, and apparatus for light collection and conversion to electricity are disclosed herein. The disclosed method involves receiving, by at least one concentrating element (e.g., a lens), light from at least one light source, where the light comprises direct light and diffuse light. The method further involves focusing, by at least one concentrating element, the direct light onto at least one concentrator photovoltaic cell. Also, the method involves passing, by at least one concentrating element, the diffuse light onto at least one solar cell of an array of solar cells arranged on a flat plate, where at least one concentrator photovoltaic cell is bonded on top of at least one of the solar cells in the array. In addition, the method involves collecting, by at least one concentrator photovoltaic cell, the direct light. Further, the method involves collecting, by at least one solar cell, the diffuse light.

A solar-powered autonomous CMOS circuit structure is fabricated with monolithically integrated photovoltaic solar cells. The structure includes a device layer including an integrated circuit and a solar cell layer. Solar cell structures in the solar cell layer can be series connected during metallization of the device layer or subsequently. The device layer and the solar cell layer are formed using a silicon-on-insulator substrate. Subsequent spalling of the silicon-on-insulator substrate through the handle substrate thereof facilitates production of a relatively thin solar cell layer that can be subjected to a selective etching process to isolate the solar cell structures.

Aspects relate to an integrated system that is electrically powered. The integrated system includes a circuit board and a photovoltaic device. The circuit board includes one or more on-board electronic components and an upper surface configured as a substrate. The photovoltaic device is integrally deposited on the upper surface of the circuit board and electrically connected to the one or more on-board electronic components, wherein the upper surface of the circuit board is a photovoltaic device substrate.

The disclosure relates to a manufacturing method comprising the formation of elemental LED or photovoltaic structures on a first substrate, each comprising at least one p-type layer, an active zone and an n-type layer, formation of a first planar metal layer on the elemental structures, provision of a transfer substrate comprising a second planar metal layer, assembly of the elemental structures with the transfer substrate by bonding of the first and second metal layers by molecular adhesion at room temperature, and removal of the first substrate.

A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer. The multi-junction solar cell can also be comprised of a heavily doped silicon layer on a non-light receiving back surface of the high-crystalline germanium solar cell and a tunnel junction between the high-crystalline silicon solar cell and the high-crystalline germanium solar cell.

A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar including a first p-doped layer and a n+ layer and the high-crystalline germanium solar cell including a second p layer and a heavily doped layer. The multi-junction solar cell can also be comprised of a heavily doped silicon layer on a non-light receiving back surface of the high-crystalline germanium solar cell and a tunnel junction between the high-crystalline silicon solar cell and the high-crystalline germanium solar cell.

A device comprising a thin film solar cell with an integrated flexible antenna, such as a meander line antenna, is disclosed. In an embodiment, the device comprises a substrate and an array of solar cells disposed on the substrate, wherein the array of solar cells are interconnected by metal conductors that carry DC power from the solar cells and which form at least part of the flexible antenna. In their capacity as an antenna, the metal conductors operate cooperatively with the solar cells to radiate an RF signal, receive an RF signal, or both radiate and receive an RF signal. The device optionally comprises a choke disposed on the substrate and electrically coupled to the array of solar cells, wherein the choke operates to impede conduction of the RF signal. A method of making the disclosed device is also disclosed.

Various technologies described herein pertain to assembling electronic devices into a microsystem. The electronic devices are disposed in a solution. Light can be applied to the electronic devices in the solution. The electronic devices can generate currents responsive to the light applied to the electronic devices in the solution, and the currents can cause electrochemical reactions that functionalize regions on surfaces of the electronic devices. Additionally or alternatively, the light applied to the electronic devices in the solution can cause the electronic devices to generate electric fields, which can orient the electronic devices and/or induce movement of the electronic devices with respect to a receiving substrate. Further, electrodes on a receiving substrate can be biased to attract and form connections with the electronic devices having the functionalized regions on the surfaces. The microsystem can include the receiving substrate and the electronic devices connected to the receiving substrate.

An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is optically coupled to a first side of the optical through silicon via. A light generating source optically coupled to a second side of the optical through silicon via is provided. The photo detector is configured to receive a light, generated by the light generating source, propagating through the optical through silicon via. The light, generated by the light generating source, is controlled by a signal generated by a signal generating source.