The solar cell structure according to the present invention comprises a nanowire (205) that constitutes the light absorbing part of the solar cell structure and a passivating shell (209) that encloses at least a portion of the nanowire (205). In a first aspect of the invention, the passivating shell (209) of comprises a light guiding shell (210), which preferably has a high- and indirect bandgap to provide light guiding properties. In a second aspect of the invention, the solar cell structure comprises a plurality of nanowires which are positioned with a maximum spacing between adjacent nanowires which is shorter than the wavelength of the light which the solar cell structure is intended to absorbing order to provide an effective medium for light absorption. Thanks to the invention it is possible to provide high efficiency solar cell structures.

In an embodiment a semiconductor detector includes a doped semiconductor body with a detection region, a front side and a rear side opposite the front side, a first electrical ring electrode and a second electrical ring electrode arranged around a read-out point on the front side, wherein the ring electrodes are configured to generate an electric field profile in the semiconductor body to guide free charge carriers to the read-out point, the ring electrodes overlapping at least partially with the detection region, as seen in plan view of the front side, a passivation layer arranged on the front side in a direction parallel to the front side between the first ring electrode and the second ring electrode and a first doped layer extending along the front side and electrically conductively connecting the first ring electrode to the second ring electrode without interruptions, wherein the first doped layer and a rest of the semiconductor body are oppositely doped to each other, and wherein a specific resistance of the first doped layer is between 1 cm and 1000 cm, inclusive.

A photodetector includes a photodiode that has a germanium junction formed between an n-doped region and a p-doped region. The germanium junction is formed to have an input interface at a light input end of the germanium junction. The input interface has a substantially flat shape or a convex-faceted shape. The photodetector also includes an input waveguide connected to the input interface of the germanium junction. The input waveguide has a substantially linear shape along a lengthwise centerline of the input waveguide. The input waveguide is oriented so that the lengthwise centerline of the input waveguide is positioned at a non-zero angle relative to input interface of the germanium junction.

The present invention relates to a water treatment system for removing at least some of ionic materials included in source water to provide soft water comprising less ionic materials than the source water to a demand source. The water treatment system may comprise: a filter module provided so as to remove at least some of ionic materials included in source water by means of an electrical force to discharge soft water; a supply channel provided so as to supply the source water to the filter module; a discharge channel provided so as to guide the soft water discharged from the filter module to a demand source; a circulation channel branched from the supply channel; a reclaim channel branched from the discharge channel; a connection channel branched from the reclaim channel and connected to the circulation channel; and a descaling part connected to the connection channel and provided so as to provide a descaling material for removing scale to the inside of the connection channel.

A solar cell, and methods of fabricating said solar cell, are disclosed. The solar cell can include a first emitter region over a substrate, the first emitter region having a perimeter around a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.

An apparatus wherein, in plane view, a first semiconductor region of a first conductivity type overlaps at least a portion of a third semiconductor region, a second semiconductor region overlaps at least a portion of a fourth semiconductor region of a second conductivity type, a height of a potential of the third semiconductor region with respect to an electric charge of the first conductivity type is lower than that of the fourth semiconductor region, and a difference between a height of a potential of the first semiconductor region and that of the third semiconductor region is larger than a difference between a height of a potential of the second semiconductor region and that of the fourth semiconductor region.

A semifinished product of a multi-junction solar cell includes a first semiconductor body that is designed as a first partial solar cell and has a first band gap, a second semiconductor body that is designed as a second partial solar cell and has a second band gap. The first semiconductor body and the second semiconductor body form a bonded connection to a tunnel diode and the first band gap is different from the second band gap. A first substrate material is adapted as a substrate layer, wherein a sacrificial layer is formed between the first substrate material and the first partial solar cell and the first substrate material is removed from the first semiconductor body, the sacrificial layer being destroyed in the process.

A solar cell using a printed circuit board (PCB) includes a substrate that is formed of an insulating material and in and through which a plurality of fixing holes and communication holes are alternately formed; a plurality of photoelectric effect generators that have ball or polyhedral shapes fixed to the substrate to be disposed over the plurality of fixing holes, and generate photoelectric effects by receiving light through light-receiving portions that are exposed to an upper portion of the substrate; a plurality of upper electrodes that are formed on a top surface of the substrate, and are connected to the respective light-receiving portions of the photoelectric effect generators; and a plurality of lower electrodes that are formed on a bottom surface of the substrate to be connected to respective non-light-receiving portions of the photoelectric effect generators, and communicate with the plurality of upper electrodes through the plurality of communication holes.

A graphene device and a method of operating the same are provided. The graphene device includes: an active layer including a plurality of meta atoms spaced apart from each other, each of the meta atoms having a radial shape, and a graphene layer that contacts each of the plurality of meta atoms; and a dielectric layer covering the active layer.

One embodiment of the present invention provides a double-sided heterojunction solar cell module. The solar cell includes a frontside glass cover, a backside glass cover situated below the frontside glass cover, and a number of solar cells situated between the frontside glass cover and the backside glass cover. Each solar cell includes a semiconductor multilayer structure situated below the frontside glass cover, including: a frontside electrode grid, a first layer of heavily doped amorphous Si (a-Si) situated below the frontside electrode, a layer of lightly doped crystalline-Si (c-Si) situated below the first layer of heavily doped a-Si, and a layer of heavily doped c-Si situated below the lightly doped c-Si layer. The solar cell also includes a second layer of heavily doped a-Si situated below the multilayer structure; and a backside electrode situated below the second layer of heavily doped a-Si.