Provided is an ultraviolet light receiving device having photosensitivity effective to target wavelengths in the ultraviolet region. A Schottky junction ultraviolet light receiving device has the photosensitivity peak wavelength in an ultraviolet region of 230 nm or more and 320 nm or less, and exhibits a rejection ratio of 10.sup.5 or more, the rejection ratio being the ratio of the responsivity Rp to the peak photosensitivity wavelength to the average of the responsivity Rv to a visible region of 400 nm or more and 680 nm or less (Rp/Rv).

A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.

A weakly coupled enhanced graphene film includes an enhanced graphene structure based on weak coupling, wherein the enhanced graphene structure based on weak coupling comprises a plurality of graphene units stacked vertically; the graphene unit is a single graphene sheet, or consists of two or more graphene sheets stacked in AB form; two vertically adjacent graphene units are weakly coupled, to promote the hot electron transition and increase the joint density of states, thereby increasing the number of hot electrons in high-energy states; the stacking direction of the graphene units in the graphene structure is in the thickness direction of the graphene film; and the graphene film enhances the accumulation of hot electrons in high-energy states by the enhanced graphene structure based on weak coupling.

Disclosed is a circular interdigital array plasmon electrode photoelectric detector suitable for non-polarized light. The detector includes a substrate, a semiconductor layer and a circular interdigital array electrode, where rectangular electrodes on left side and right side of the circular interdigital array electrode respectively form a positive electrode and a negative electrode, the positive and negative electrodes are connected to the circular interdigital array electrode through electrode connecting wires, and a circular electrode array and the electrode connecting wires form a circular interdigital array electrode structure. A preparation method for a circular interdigital array plasmon electrode photoelectric detector is also provided. According to the present disclosure, by adjusting inner circle and outer circle radii and the arrangement manner of circular electrodes, the polarization-insensitive effect of the detector for incident light is achieved, and the absorption efficiency for the incident light and the bandwidth of the detector are increased.

Disclosed is a circular interdigital array plasmon electrode photoelectric detector suitable for non-polarized light. The detector includes a substrate, a semiconductor layer and a circular interdigital array electrode, where rectangular electrodes on left side and right side of the circular interdigital array electrode respectively form a positive electrode and a negative electrode, the positive and negative electrodes are connected to the circular interdigital array electrode through electrode connecting wires, and a circular electrode array and the electrode connecting wires form a circular interdigital array electrode structure. A preparation method for a circular interdigital array plasmon electrode photoelectric detector is also provided. According to the present disclosure, by adjusting inner circle and outer circle radii and the arrangement manner of circular electrodes, the polarization-insensitive effect of the detector for incident light is achieved, and the absorption efficiency for the incident light and the bandwidth of the detector are increased.

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a lateral LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body; and a second electrode in contact with the first surface of the semiconductor body, the first and second electrodes defining an area through which light energy from at least one light source can impinge on the first surface, wherein the LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

Provided is a semiconductor device including: a semiconductor layer having an uneven structure configured to include a recessed portion on one surface side thereof; a first electrode film (first deposited film) provided on the one surface of the semiconductor layer; and a second electrode film (second deposited film) provided on a bottom surface of the recessed portion, wherein an enlarged portion having a cross-sectional area enlarged with respect to a portion on an opening portion side of the recessed portion is provided.

A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky diode.

A surface plasmon-based photodetector includes: a silicon substrate; a grating in contact with a surface of the silicon substrate, in which the grating forms a Schottky diode with the semiconductor substrate; and a complementary-metal-oxide-semiconductor (CMOS) sample and hold stage as well as an analog-to-digital circuit (ADC) in the silicon substrate and arranged to detect electrical current generated at the Schottky diode.

The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded Al.sub.yGa.sub.1-yN layer, and an undoped N-polar plane Al.sub.xGa.sub.1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiN.sub.z passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector' in the UV solar-blind band.