The present invention discloses a solar-blind AlGaN ultraviolet (UV) photodetector and a preparation method thereof. The solar-blind AlGaN UV photodetector comprises an UV photodetector epitaxial wafer, including an undoped N-polar plane AlN buffer layer, a carbon-doped N-polar plane AlN layer, a carbon-doped N-polar plane composition-graded Al.sub.yGa.sub.1-yN layer, and an undoped N-polar plane Al.sub.xGa.sub.1-xN layer that are grown sequentially on a silicon substrate, and also comprises an insulating layer, an ohmic contact electrode, and a Schottky contact electrode arranged on the UV photodetector epitaxial wafer, as well as a SiN.sub.z passivation layer arranged on both sides of the UV photodetector epitaxial wafer, where x=0.5-0.8, y=0.75-0.95, and z=1.33-1.5. The present invention realizes the preparation of the high-performance solar-blind AlGaN UV photodetector, and improves the responsivity and detectivity of the AlGaN UV photodetector' in the UV solar-blind band.

The present disclosure provides a silicon-based infrared band avalanche photodetector and a fabrication method thereof. The photodetector includes a bottom electrode layer, a silicon film layer, and a top metal film layer stacked sequentially, where the bottom electrode layer forms an ohmic contact with the silicon film layer, and the top metal film layer forms a Schottky contact with the silicon film layer. The photodetector absorbs near-infrared light through the top metal film layer, generates hot carriers, and injects the hot carriers into the silicon film layer, and the hot carriers are collected by the bottom electrode layer to form a photocurrent, thereby achieving the detection of infrared light with energy below a band gap of silicon. Moreover, broadband or narrowband optical high absorption at different infrared wavelengths can be achieved by adjusting a thickness of the silicon film layer and a type of the top metal film layer.

The present disclosure provides a silicon-based infrared band avalanche photodetector and a fabrication method thereof. The photodetector includes a bottom electrode layer, a silicon film layer, and a top metal film layer stacked sequentially, where the bottom electrode layer forms an ohmic contact with the silicon film layer, and the top metal film layer forms a Schottky contact with the silicon film layer. The photodetector absorbs near-infrared light through the top metal film layer, generates hot carriers, and injects the hot carriers into the silicon film layer, and the hot carriers are collected by the bottom electrode layer to form a photocurrent, thereby achieving the detection of infrared light with energy below a band gap of silicon. Moreover, broadband or narrowband optical high absorption at different infrared wavelengths can be achieved by adjusting a thickness of the silicon film layer and a type of the top metal film layer.

A radiation detection device includes at least one heterojunction Schottky barrier diode (HSBD). The at least one HSBD includes at least one boron-doped diamond layer located on top of at least one epitaxial layer, the epitaxial layer located on top of at least one buffer layer, and the buffer layer located on top of a bulk substrate layer. At least one contact layer is located on a side of the bulk substrate layer opposite the epitaxial layer.

A radiation detection device includes at least one heterojunction Schottky barrier diode (HSBD). The at least one HSBD includes at least one boron-doped diamond layer located on top of at least one epitaxial layer, the epitaxial layer located on top of at least one buffer layer, and the buffer layer located on top of a bulk substrate layer. At least one contact layer is located on a side of the bulk substrate layer opposite the epitaxial layer.

A semiconductor device includes a semiconductor layer, which is disposed on the surface of a substrate and causing an oxidation reaction and a reduction reaction when irradiated with light, an oxidation catalyst layer, which is disposed on part of the surface of the semiconductor layer, forms along with the semiconductor layer a Schottky junction, and oxidizes an oxidation target substance, a reduction catalyst layer, which is disposed on part of the surface of the semiconductor layer where the oxidation catalyst layer is not disposed so as to be separated from the oxidation catalyst layer, forms along with the semiconductor layer an ohmic junction, and reduces a reduction target substance, and an insulation layer, which is disposed on the entirety of the surface of the semiconductor layer where none of the oxidation catalyst layer and the reduction catalyst layer is disposed so as to be in contact with the oxidation catalyst layer and the reduction catalyst layer.

A semiconductor device includes a semiconductor layer, which is disposed on the surface of a substrate and causing an oxidation reaction and a reduction reaction when irradiated with light, an oxidation catalyst layer, which is disposed on part of the surface of the semiconductor layer, forms along with the semiconductor layer a Schottky junction, and oxidizes an oxidation target substance, a reduction catalyst layer, which is disposed on part of the surface of the semiconductor layer where the oxidation catalyst layer is not disposed so as to be separated from the oxidation catalyst layer, forms along with the semiconductor layer an ohmic junction, and reduces a reduction target substance, and an insulation layer, which is disposed on the entirety of the surface of the semiconductor layer where none of the oxidation catalyst layer and the reduction catalyst layer is disposed so as to be in contact with the oxidation catalyst layer and the reduction catalyst layer.

A photodiode according to an embodiment includes a semiconductor substrate, a Schottky junction structure layer disposed on the semiconductor substrate and including a first layer including a conductive material and a semiconductor layer, and a pinning layer disposed adjacent to the Schottky junction structure layer and fixing potentials of the semiconductor substrate and the first layer.

A method for controlling a concentration of donors in an Al-alloyed gallium oxide crystal structure includes implanting a Group IV element as a donor impurity into the crystal structure with an ion implantation process and annealing the implanted crystal structure to activate the Group IV element to form an electrically conductive region. The method may further include depositing one or more electrically conductive materials on at least a portion of the implanted crystal structure to form an ohmic contact. Examples of semiconductor devices are also disclosed and include a layer of an Al-alloyed gallium oxide crystal structure, at least one region including the crystal structure implanted with a Group IV element as a donor impurity with an ion implantation process and annealed to activate the Group IV element, an ohmic contact including one or more electrically conductive materials deposited on the at least one region.

An electromagnetic wave detector includes at least one photoelectric conversion element and a plasmon filter disposed so as to be opposite to the at least one photoelectric conversion element. A plurality of through-holes are periodically made in the plasmon filter. The at least one photoelectric conversion element includes a semiconductor layer including a region overlapping with at least one through-hole in the plurality of through-holes in planar view, an insulating layer formed so as to cover a part of the region, a two-dimensional material layer that is disposed on the other portion of the region and the insulating layer and electrically connected to the other portion of the region, a first electrode portion electrically connected to the two-dimensional material layer, and a second electrode portion electrically connected to the semiconductor layer.