Provided is a light-emitting element with high external quantum efficiency and a low drive voltage. The light-emitting element includes a light-emitting layer which contains a phosphorescent compound and a material exhibiting thermally activated delayed fluorescence between a pair of electrodes, wherein a peak of a fluorescence spectrum and/or a peak of a phosphorescence spectrum of the material exhibiting thermally activated delayed fluorescence overlap(s) with a lowest-energy-side absorption band in an absorption spectrum of the phosphorescent compound, and wherein the phosphorescent compound exhibits phosphorescence in the light-emitting layer by voltage application between the pair of electrodes.

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having side areas covered by a shaped body; at least one via including an electrically conductive material; and at least one electrically conductive connection electrically conductively connected to the semiconductor chip and the via, wherein the via is laterally spaced part from the semiconductor chip; the via includes a contact pin, the contact pin including an electrically conductive material; and the contact pin is laterally completely enclosed by the shaped body.

Compact systems, compact devices and methods are provided to sense changes in luminescence due to environmental influences on a luminescent material. Such systems, devices and methods may be implemented in a compact device, e.g., an integrated circuit package, which may be incorporated into or attached to a device, such as a smartphone, watch, flashlight, vehicle, etc. The systems, devices, and methods described herein are useful in sensing luminescence, as well as changes in luminescence that are indicative of environmental influences, such as the presence and concentration of a gas or chemical, ambient temperature, pressure, light, etc., in an area surrounding a luminescent material included in a compact device.

The invention provides a luminescent nano particles based luminescent material comprising a matrix of interconnected coated luminescent nano particles, wherein for instance wherein the luminescent nano particles comprise CdSe, wherein the luminescent nano particles comprise a coating of CdS and wherein the matrix comprises a coating comprising ZnS. The luminescent material according may have a quantum efficiency of at least 80% at 25 C., and having a quench of quantum efficiency of at maximum 20% at 100 C. compared to the quantum efficiency at 25 C.

A wavelength converting material comprising a phosphate compound have a chemical formula of AB.sub.1-m-nPO.sub.4:M.sub.m, N.sub.n, wherein A comprises an alkali metal element, B comprises an alkaline earth metal element, M is a sensitizer comprising a rare-earth element, and N is an acceptor comprising a rare-earth element, wherein 0<m0.3 and 0<n0.3.

The present invention discloses a photocell device with a responsivity amplifying structure, comprising: a partially reflective filter layer that transmits light within a specific wavelength range and reflects other wavelengths; a gain layer that interacts with photons to alter their wavelength; and an optoelectronic reaction layer. The gain layer is positioned between the partially reflective filter layer and the reaction layer. Photons interacting with the gain layer either enter the reaction layer for conversion or are reflected back for interacting with the gain layer again and then entering the reaction layer for conversion. In another embodiment, an additional reflective filter is placed between the gain layer and the optoelectronic reaction layer.

Embodiments of the invention are directed to biosensors comprising one or more encapsulated functionalized domains, where the encapsulating matrix acts as the primary interface between the biosensor and the environment. Embodiments of the invention are also directed to the fabrication of the biosensor.

Provided are a light-receiving element which has more capability of detecting wavelengths than that of existing silicon light-receiving elements and a unit pixel of an image sensor by using it. The light-receiving element includes: a light-receiving unit which is floated or connected to external voltage and absorbs light; an oxide film which is formed to come in contact with a side of the light-receiving unit; a source and a drain which stand off the light-receiving unit with the oxide film in between and face each other; a channel which is formed between the source and the drain and forms an electric current between the source and the drain; and a wavelength expanding layer which is formed in at least one among the light-receiving unit, the oxide film and the channel and forms a plurality of local energy levels by using strained silicon.

An energy harvesting device is provided. The device includes a patterned graphene sheet arranged on a substrate, wherein the graphene sheet contains channels; a perovskite composition arranged on the graphene sheet, wherein the perovskite composition conforms to the channels of the graphene sheet; and a luminescent material composition or a 2D material composition arranged on the perovskite composition. The device is configured to convert electromagnetic radiation and/or thermal energy to an electrical signal.

Ultraviolet-light photodetector structures, and methods relating to the structure, where the structure includes a silicon-photoelectric conversion element and a UV-to-visible down conversion layer. The UV-to-visible down conversion layer has a halide-perovskite component. The halide-perovskite component has an absorption spectrum at wavelengths in the range of 400 nm or less and has an associate photoluminescence (PL) emission resulting in an emission spectrum with wavelengths in the range of above 400 nm. The UV-to-visible down conversion layer is associated with the silicon-photoelectric conversion element such that light in the absorption spectrum incident on the UV-to-visible down conversion layer results in a visible light emission which is incident on the silicon-photoelectric conversion element so as to produce an electrical signal.