An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

An optoelectronic device includes an integrated circuit including electronic devices formed on a front side of a semiconductor substrate. A barrier layer is formed on a back side of the semiconductor substrate. A photonics layer is formed on the barrier layer. The photonics layer includes a core for transmission of light and a cladding layer encapsulating the core and including a different index of refraction than the core. The core is configured to couple light generated from a component of the optoelectronic device.

A photodiode has an absorption layer and a cap layer operatively connected to the absorption layer. A pixel is formed in the cap layer and extends into the absorption layer to receive charge generated from photons therefrom. The pixel defines an annular diffused area to reduce dark current and capacitance. A photodetector includes the photodiode. The photodiode includes includes an array of pixels formed in the cap layer. At least one of the pixels extends into the absorption layer to receive charge generated from photons therefrom. At least one of the pixels defines an annular diffused area to reduce dark current and capacitance.

A method of manufacturing a photodiode including a useful layer made of a semi-conductor alloy. The useful layer has a band gap value which decreases from its upper face to its lower face. A step of producing a first doped region forming a PN junction with a second doped region of the useful layer, said production of a first doped region including a first doping step, so as to produce a base portion; and a second doping step, so as to produce at least one protuberance protruding from the base portion and in the direction of the lower face.

A nitride semiconductor structure includes a nitride semiconductor layer having a principal plane and including a nitride semiconductor. The normal to the principal plane of the nitride semiconductor layer is inclined at 5 degrees or more and 17 degrees or less with respect to the [11-22] axis of the nitride semiconductor constituting the nitride semiconductor layer in the direction of the +c-axis of the nitride semiconductor. The nitride semiconductor structure may further include a substrate having a principal plane which supports the nitride semiconductor layer on the principal plane. The substrate may include any one selected from the group consisting of a nitride semiconductor, sapphire, and Si.

In an embodiment, a III-V nitride semiconductor device comprises an AlGaN epitaxial layer and a metal electrode. The AlGaN epitaxial layer is a C-plane n-type or undoped layer, and the AlGaN epitaxial layer has an epitaxial surface consisting of one or more semi-polar planes. The metal electrode is directly formed on the one or more semi-polar planes.

A semiconductor optical device has a substrate including a primary surface with first to fourth areas; a first conductivity-type semiconductor layer disposed on the third and fourth areas; a first semiconductor laminate disposed on the first conductivity-type semiconductor layer and the third area; a resin body disposed on the second to fourth areas; a first electrode connected with the first semiconductor laminate through a first opening of the resin body in the third area; a first pad electrode disposed on the first area; and a wiring conductor extending on a first side and a top of the resin body in the second and third areas and on the first area to connect the first electrode to the first pad electrode. The first side of the resin body is disposed in the second area. The first semiconductor laminate includes a second conductivity-type semiconductor region being in contact with the first electrode.

A method for fabricating an optically transparent conductor including depositing a plurality of metal nanowires on a substrate, annealing or illuminating the plurality of metal nanowires to thermally or optically fuse nanowire junctions between metal nanowires to form a metal nanowire network, disposing a graphene layer over the metal nanowire network to form a nanohybrid layer comprising the graphene layer and the metal nanowire network, depositing a dielectric passivation layer over the nanohybrid layer, patterning the dielectric passivation layer using lithography, printing, or any other method of patterning to define an area for the optically transparent conductor, and etching the patterned dielectric passivation layer to define the optically transparent conductor.

Gas detecting devices and in particular volatile substance sensors such as breath alcohol devices sensors. The semiconductor gas sensor device includes a laser structure and an optical waveguide resonator formed in a same compound semiconductor which includes at least one optical emission layer and one optical propagation layer. The optical waveguide resonator is formed in the optical propagation layer and is to its greater part separated from the remaining portion of the optical propagation layer. The laser structure is provided adjacent to a portion of the optical waveguide resonator and arranged to transmit electromagnetic radiation at a specific wavelength band to the optical waveguide resonator arranged to resonate at that specific wavelength band.