A solar module includes a plurality of photovoltaic cells and a sandwich structure on which the plurality of photovoltaic cells is structurally supported. The sandwich structure includes top and bottom structural plates and an open-cell inner material located between the top and bottom structural plates.

An electronic power cell memory back-up battery is disclosed. The electronic power cell memory back-up battery utilizes stored light photons to produce usable energy, and can be used to replace batteries or other power sources in electronic devices. The electronic power cell memory back-up battery disclosed includes a light source and a photovoltaic device in optical communication with the light source. The photovoltaic device creates electrical power in response to receiving light from the light source. A portion of the electrical power generated by the photovoltaic device is used to power the light source. In some embodiments power input contacts are included for use in providing initial start-up power to the light source. In some embodiments the light source comprises a light-emitting device and a photoluminescent material optically coupled to the light-emitting device, where the photoluminescent material emits light in response to receiving light from the light-emitting device.

An optical sensor is described that includes a light emitter and a photodetector assembly directly attached to a transparent substrate. In one or more implementations, the optical sensor comprises at least one light emitter and a photodetector assembly (e.g., photodiodes, phototransistors, etc.). The light emitter(s) and the photodetector assembly are directly mounted (e.g., attached) to a transparent substrate.

The invention relates to a method for classifying a light-emitting semiconductor component (301) for an image sensor application, wherein the semiconductor component (301) is designed as a light source for an image sensor (302), comprising the following steps: providing the light-emitting semiconductor component (301); determining at least one of the following parameters of the light emitted with an emission spectrum by the light-emitting semiconductor component (301) during operation: R=qR().Math.S()d.Math.texp, G=qG().Math.S()d.Math.texp, B=qB().Math.S()d.Math.texp, wherein qR(), qG(), and qB() are spectral sensitivities of a red, green, and blue color channel of the image sensor (302), S() is the emission spectrum of the light-emitting semiconductor component (301), texp is an exposure time, and designates a wavelength; classifying the light-emitting semiconductor component (301) into a class from a group of classes, which are characterized by different value ranges of at least one parameter that depends on at least one of the parameters R, G, and B. The invention further relates to an image sensor application.

The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device A1 of the present invention includes: a substrate 1, including a semiconductor material, and including a main surface 111 and a back surface 112; a semiconductor light-emitting element 7A at the substrate; a semiconductor light-receiving element 7B at the substrate; a conductive layer 3, conducting the semiconductor light-emitting element 7A and the semiconductor light-receiving element 7B; and an insulating layer 2 between at least a portion of the conductive layer 3 and the substrate; wherein the substrate 1 includes a recess 14 recessed from the main surface 111 and including a bottom surface 142A of a light-emitting side recess where the semiconductor light-emitting element 7A is disposed, and a bottom surface 142B of a light-receiving side recess where the semiconductor light-receiving element 7B is disposed; a light-emitting side transparent portion 18A for light from the semiconductor light-emitting element 7A to pass through the bottom surface 142A of the light-emitting side recess to the back surface 112; and a light-receiving side transparent portion 18B for light from the back surface 112 to pass through the bottom surface 142B of the light-receiving side recess to the semiconductor light-receiving element 7B.

An optical smoke detection unit for a danger alarm includes a light-emitting diode (LED) including at least one LED chip in an LED housing and connection contacts contacting the LED chip and running out of the LED housing. The smoke detection unit may include a photo-detector spectrally sensitive to emitted light for detecting smoke and a control unit for controlling the LED and for evaluating a sensor signal of the photo-detector for characteristic fire magnitudes. The LED may include a photosensor spectrally sensitive to the emitted light. The control unit may detect an electrical characteristic magnitude of the photosensor while providing electrical control of the LED, and based on the detected electrical characteristic magnitude, (a) derive and output ageing information about the LED and/or (b) determine a reduction of light current of the LED and modify the electrical control of LED to correct such reduction.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit scale. An ID chip or an IC card of the present invention has an integrated circuit in which a TFT (a thin film transistor) is formed from an insulated thin semiconductor film Further, an ID chip or an IC card of the present invention has a light-emitting element and a light-receiving element each using a non-single-crystal thin film for a layer conducting photoelectric conversion. Such a light-emitting element or a light-receiving element may be formed consecutively to (integrally with) an integrated circuit or may be formed separately and attached to an integrated circuit.

A method for producing a plurality of optoelectronic semiconductor components (100) is provided, comprising the following steps: a) providing an auxiliary carrier (2); b) providing a plurality of semiconductor chips (10), wherein each of the semiconductor chips has a carrier body (12) and a semiconductor body (4) arranged on an upper side (22) of the carrier body; c) attaching the plurality of semiconductor chips on the auxiliary carrier, wherein the semiconductor chips are spaced apart from one another in a lateral direction (L) and wherein the semiconductor bodies are facing the auxiliary carrier, as seen from the carrier body; d) forming a scattering layer (18), at least in regions between the semiconductor bodies of adjacent semiconductor chips; e) forming a composite package (20); f) removing the auxiliary carrier (2); and g) individually separating the composite package into a plurality of optoelectronic semiconductor components (100).