Patent classifications
H01L41/277
Microelectromechanical systems, devices, and methods for fabricating a microelectromechanical systems device, and methods for generating a plurality of frequencies
A MEMS device may include a first electrode region; a first piezoelectric layer arranged over the first electrode region; a second electrode region arranged over the first piezoelectric layer; a second piezoelectric layer arranged over the first piezoelectric layer and the second electrode region; a third electrode region arranged over the second piezoelectric layer; a first input port coupled to the first electrode region and/or the second electrode region for providing a first electrical signal to the first piezoelectric layer to generate a first vibration in the first piezoelectric layer; a second input port coupled to the second electrode region and/or the third electrode region for providing a second electrical signal to the second piezoelectric layer to generate a second vibration in the second piezoelectric layer; and an output port configured to receive an output signal including a superposition of the first vibration and the second vibration.
STACKED PIEZOELECTRIC COMPOSITES AND METHODS OF MAKING
The present application relates to stacked piezoelectric composites comprising piezoelectric structures. Suitably, the composites are useful as tissue-stimulating implants, including spinal fusion implants. The present application also relates to methods of making stacked piezoelectric composites.
FLEXIBLE PIEZOELECTRIC FILM-BASED POWER SOURCE
A compact system for optimizing energy harvesting efficiency using of very thin (less than 10 μm thickness) PVDF films. The system is comprised of a flexible substrate such as polypropylene (PP) or Polydimethylsiloxane (PDMS) that supports PVDF thin films sandwiched between two aluminum electrode sheets. The PVDF films may be fabricated at different selected thicknesses by increasing spin rates. The PVDF films may also be fabricated in various different stacking arrangements in order to further allow the electrode to more efficiently produce energy.
Stacked piezoelectric composites and methods of making
The present application relates to stacked piezoelectric composites comprising piezoelectric structures. Suitably, the composites are useful as tissue-stimulating implants, including spinal fusion implants. The present application also relates to methods of making stacked piezoelectric composites.
ELECTROMECHANICAL TRANSDUCER ELEMENT, LIQUID DISCHARGE HEAD, LIQUID DISCHARGE DEVICE, LIQUID DISCHARGE APPARATUS, AND METHOD OF MAKING ELECTROMECHANICAL TRANSDUCER ELEMENT
An electromechanical transducer element includes a first electrode on a diaphragm, an electromechanical transducer film on the first electrode, and a second electrode on the electromechanical transducer film. The electromechanical transducer film has a stacking structure. The electromechanical transducer film has a linear tapered shape that narrows from a first side facing the first electrode to a second side facing the second electrode in a cross section along a stacking direction.
PIEZOELECTRIC MEMS DEVICES AND METHODS OF FORMING THEREOF
In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.
Surface acoustic wave device and method of manufacturing the same
An end-surface-reflection surface acoustic wave device, which reflects a surface acoustic wave between first and second end surfaces facing each other, includes a support substrate, an intermediate layer, a piezoelectric layer, and an IDT electrode. The first end surface is located at one end portion in a surface-acoustic-wave propagation direction and extends from a main surface of the piezoelectric layer to at least a portion of the intermediate layer. The second end surface is located at the other end portion in the surface-acoustic-wave propagation direction and extends from the main surface of the piezoelectric layer to at least a portion of the intermediate layer. The support substrate includes support substrate portions that are located outside the first and second end surfaces in the surface-acoustic-wave propagation direction.
ELECTROACTIVE POLYMER TRANSDUCER PUMP
An electroactive polymer transducer device includes a housing, a base film, plate or wall within the housing, and at least one stack of layers deposited on the base film, plate or wall with at least one housing wall extending from the base film, wherein the at least one stack of layers includes an alternating sequence of one or more plastic electroactive material layers and electrically conductive layers on top of each other. A method of making an electroactive polymer transducer device is also described.
METHOD FOR TRANSFERRING A PIEZOELECTRIC LAYER ONTO A SUPPORT SUBSTRATE
A method for transferring a piezoelectric layer onto a support substrate comprises:providing a donor substrate including a heterostructure comprising a piezoelectric substrate bonded to a handling substrate, and a polymerized adhesive layer at the interface between the piezoelectric substrate and the handling substrate,forming a weakened zone in the piezoelectric substrate, so as to delimit the piezoelectric layer to be transferred,providing the support substrate,forming a dielectric layer on a main face of the support substrate and/or of the piezoelectric substrate,bonding the donor substrate to the support substrate, the dielectric layer being at the bonding interface, andfracturing and separating the donor substrate along the weakened zone at a temperature below or equal to 300 C.
FILM BULK ACOUSTIC RESONATOR
Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.