Methods of forming silicon germanium tin (Si.sub.xGe.sub.1-xSn.sub.y) films are disclosed. Exemplary methods include growing films including silicon, germanium and tin in an epitaxial chemical vapor deposition reactor. Exemplary methods are suitable for high volume manufacturing. Also disclosed are structures and devices including silicon germanium tin films.

A memory device, including a first memory region including a first substrate, a plurality of first semiconductor devices on the first substrate, and a first interlayer insulating layer covering the plurality of first semiconductor devices; and a second memory region including a second substrate on the first interlayer insulating layer and a plurality of second semiconductor devices on the second substrate, the second substrate including a first region in a plurality of grooves in the first interlayer insulating layer and a second region including grains extending from the first region, the second region being on an upper surface of the first interlayer insulating layer.

A novel doping technology for semiconductor wafers has been developed, referred to as a quantum doping process that permits the deposition of only a fixed, controlled number of atoms in the form of a monolayer in a substitutional condition where only unterminated surface bonds react with the dopant, thus depositing only a number of atoms equal to the atomic surface density of the substrate material. This technique results in providing a quantized set of possible dopant concentration values that depend only on the additional number of layers of substrate material formed over the single layer of dopant atoms.

Described is a method for producing a nitride compound semiconductor layer, involving the steps of:depositing a first seed layer (1) comprising a nitride compound semiconductor material on a substrate (10);desorbing at least some of the nitride compound semiconductor material in the first seed layer from the substrate (10);depositing a second seed layer (2) comprising a nitride compound semiconductor material; andgrowing the nitride compound semiconductor layer (3) containing a nitride compound semiconductor material onto the second seed layer (2).

In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

A method of fabricating a nanostructure, which comprises forming an elongated tubular nanostructure, and generating conditions for said tubular nanostructure to unwrap.

Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550 C. and preferable below 350 C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500 C. for less than 12 msec.

Provided is a composite substrate which has a high-performance semiconductor layer. A composite substrate of the present invention comprises: a supporting substrate which is formed of an insulating material; a semiconductor layer which is formed of a single crystal semiconductor that is superposed on and joined to the supporting substrate; and interfacial inclusions which are present in the interface between the supporting substrate and the semiconductor layer at a density of 10.sup.12 atoms/cm.sup.2 or less, and which are formed of a metal element that is different from the constituent elements of the supporting substrate and the semiconductor layer.

A template for growing a semiconductor, a method of separating a growth substrate and a method of fabricating a light emitting device using the same are disclosed. The template for growing a semiconductor includes a growth substrate including a nitride substrate; a seed layer disposed on the growth substrate and including at least one trench; and a growth stop layer disposed on a bottom surface of the trench, wherein the trench includes an upper trench and a lower trench, and the upper trench has a smaller width than the lower trench.

A change in electrical characteristics in a semiconductor device including an oxide semiconductor film is inhibited, and the reliability is improved. The semiconductor device includes a gate electrode, a first insulating film over the gate electrode, an oxide semiconductor film over the first insulating film, a source electrode electrically connected to the oxide semiconductor film, a drain electrode electrically connected to the oxide semiconductor film, a second insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, a first metal oxide film over the second insulating film, and a second metal oxide film over the first metal oxide film. The first metal oxide film contains at least one metal element that is the same as a metal element contained in the oxide semiconductor film. The second metal oxide film includes a region where the second metal oxide film and the first metal oxide film are mixed.