Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a gate disposed on a quantum well stack; an insulating material disposed on the gate; and a conductive via extending through the insulating material and in conductive contact with the gate.

A graphene/doped 2D layered material Van der Waals heterojunction superconducting composite structure, a superconducting device and a manufacturing method therefor, which relate to the technical field of superconducting materials. Said structure includes: a (2n+1)-layered structure formed by graphene layers and doped 2D layered materials which are alternately provided. An outer layer of the layered structure is the graphene layer, n is an integer between 1 to 50, a superconducting region is formed by a region in which the graphene perpendicularly overlaps the doped 2D layered material, and the graphene layers and the doped two-dimensional layered materials are self-assembled into one piece by means of a Van der Waals force.

The invention relates to a ferroelectric, which has a piezoelectric material having a hafnium proportion of 2% or less, to the use of a ferroelectric of this type in energy generation and for implementation in memory, processor and sensor technologies, to the use of a ferroelectric, in which use energy demand is lowered by superconductivity, and to a method for producing a ferroelectric, in which method a sintering method is used.

A device, system and method for measuring the temperature at the center of a normal hotspot and the heat escape time in superconducting filament or nanowire toward the substrate. The device includes structured layers; a superconducting filament is implemented as an active layer where an electrical current pulse or single photon radiation generates a hot spot; a sensitive semiconductor layer of germanium serves as a temperature sensor (thermometer); and a thin layer of insulating silicon oxide is intercalated between the superconducting layer and the germanium having a thickness in the range of 2-10 nm and width 5-100 μm. This device provides a direct measurement of the temperature at the center of a hot spot and determination of the heat escape time toward a substrate; and can be used to determine the sensitivity of a superconducting single photon detector device to a next upcoming photon.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

An oxide superconductor includes: REBa.sub.2Cu.sub.3O.sub.7-x (RE being one element selected from a “RE element group” of Pr, Nd, Sm, Eu, Gd, Y, Tb, Dy, Ho, Er, Tm, Yb, and Lu). The RE includes at least three types of metallic elements (M1, M2, and M3), and the three types of metallic elements are any element of the RE element group selected in order. In an oxide system satisfying R(M1)≤20 mol % and R(M2)≥60 mol % and R(M3)≤20 mol %, R(M1) being an average metallic element ratio of M1 in M1+M2+M3, SD(Ms)>0.15 is satisfied at a position at 50% of an average film thickness of a cross section including the c-axis, Ms being the metallic element of not larger of R(M1) and R(M3), SD(Ms) being a standard deviation/average value of a concentration of Ms.

An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 μm.

The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.

A superconductor tape and method for manufacturing, measuring, monitoring, and controlling same are disclosed. Embodiments are directed to a superconductor tape which includes a superconductor film overlying a buffer layer which overlies a substrate. In one embodiment, the superconductor film is defined as having a c-axis lattice constant higher than 11.74 Angstroms. In another embodiment, the superconductor film comprises BaMO.sub.3, where M=Zr, Sn, Ta, Nb, Hf, or Ce, and which has a (101) peak of BaMO.sub.3 elongated along an axis that is between 60° to 90° from an axis of the (001) peaks of the superconductor film. These and other embodiments achieve well-aligned nanocolumnar defects and thus a high lift factor, which can result in superior critical current performance of the tape in, for example, high magnetic fields.

The present invention relates to a one-electrode cell and series of two or more cells as a device at temperatures from below to above room temperature comprising a very high permittivity ferroelectric.

In a device constituted by one or more ferroelectricity-induced superconductor cells, the cells do not have to be in physical contact with one another; one terminal can be connected to a first cell and the other connected to a third cell without physical contact between any of the three cells. With the spontaneous and dynamic alignment of the dipoles of the ferroelectric, a potential difference is induced in different points of the surface of the cell, cells or device and a current can be harvested by conductor-terminals.

The present invention can be used for contactless charging of energy storage devices and as a part of several components or products.