A heterojunction battery, a preparation method therefor, and an application thereof are provided. The heterojunction battery includes a substrate, a first intrinsic amorphous silicon layer, an N-type doped amorphous silicon layer or microcrystalline silicon layer or nanocrystalline silicon layer, a first transparent conductive oxide layer, a second intrinsic amorphous silicon layer, a P-type doped amorphous silicon layer or microcrystalline silicon layer or nanocrystalline silicon layer, a second transparent conductive oxide layer, and a dielectric film. The heterojunction battery further includes a metal mesh. The metal mesh penetrates through the dielectric film and is fixedly connected to the first transparent conductive oxide layer and the second transparent conductive oxide layer, respectively. The metal mesh is composed of multiple first metal wires and multiple second metal wires. The first metal wires are perpendicular to the second metal wires.

A photovoltaic cell is provided, including a substrate having a front surface with metal pattern regions and a rear surface, first pyramid structures in each metal pattern region, platform protrusion structures on the rear surface, a first tunneling layer and a first doped conductive layer on a portion of the front surface in a respective metal pattern region, and a second tunneling layer and a second doped conductive layer on the rear surface. A height of each first pyramid structure is greater than that of each platform protrusion structure. A one-dimensional dimension of a bottom portion of each first pyramid structure is less than that of each platform protrusion structure. A doping element type of the first doped conductive layer is the same as that of the substrate. A doping element type of the second doped conductive layer is different from that of the first doped conductive layer.

A method for treating a photovoltaic module, the method including in succession a first procedure of exposing at least one photovoltaic cell of the photovoltaic module to electromagnetic radiation, during which the temperature of the photovoltaic cell increases until reaching a temperature, referred to as performance enhancement temperature, that is greater than or equal to 100 C.; a second procedure of exposing the photovoltaic cell to electromagnetic radiation, during which the temperature of the photovoltaic cell is maintained between T.sub.s5 C. and T.sub.s+5 C., where T.sub.s is the performance enhancement temperature, the second exposure procedure having a duration greater than or equal to 5 s; and a procedure of cooling the photovoltaic cell until a temperature of less than 100 C. is reached.

A solar cell and a preparation method thereof are provided. A method for preparing the solar cell includes following steps: forming an amorphous silicon layer on a tunneling oxide layer at a first side; forming a doped polycrystalline silicon layer in a first process by a diffusion doping treatment; forming a doped oxide layer on the doped polycrystalline silicon layer in a second process; and after the doped oxide layer is formed, doping the first side selectively and heavily by a laser doping process, and forming a selective emitter region in a heavily doped region.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

A photovoltaic device includes a substrate structure and at least one Se-containing layer, such as a CdSeTe layer. A process for manufacturing the photovoltaic device includes forming the CdSeTe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process can also include controlling a thickness range of the Se-containing layer.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.

The present application provides a silicon-based heterojunction solar cell and a manufacturing method thereof. The silicon-based heterojunction solar cell includes: a silicon substrate, as well as a first passivation layer, an N-type doped layer, a first transparent conductive oxide layer and a first electrode. The first passivation layer, the N-type doped layer, the first transparent conductive oxide layer and the first electrode are sequentially stacked on the front side of the silicon substrate along a first direction. The first passivation layer includes a first sub-passivation layer, a carbon-doped amorphous silicon layer and a second sub-passivation layer which are sequentially stacked along the first direction.