A curved photovoltaic tile (100) and a manufacturing method thereof. The method includes: cutting at least one complete solar cell (11) to obtain a plurality of flat solar cells (12); electrically connecting the plurality of flat solar cells (12) to form a flat solar cell unit (13); arranging the flat solar cell unit (13) on a flat backsheet (14) to obtain a flat assembly (10); shaping the flat assembly (10) to obtain a curved assembly (20); and stacking and fixing the curved assembly (20) and a curved panel (30) to obtain the curved photovoltaic tile (100), wherein the curved assembly (20) has a same shape as the curved panel (30).

A backside emitter solar cell structure having a heterojunction. On one side edge of the backside emitter solar cell structure having the heterojunction, on an edge region of a crystalline semiconductor substrate of the backside emitter solar cell structure having the heterojunction having a doping of a first conductivity type, there is a layer sequence with a double intrinsic layer formed.

A photovoltaic cell (1) including a first front collector layer (4), an amorphous silicon layer (6) on the first layer (4) and a second conductive layer (8) on the amorphous silicon layer (6). Electrical connection of the second conductive layer (8) to the first layer (4) is made through the amorphous silicon layer (6) at the periphery of the photovoltaic cell, the electrically conductive layer (8) comprising a positive peripheral bus (8), which is connected to the TCO first layer (4) and to at least one positive connection terminal at one end of the positive peripheral bus, and a negative peripheral bus, which is connected to a negative connection terminal, and the positive and negative peripheral buses being asymmetrical relative to one another, with the positive peripheral bus being longer than the negative peripheral bus.

A photovoltaic cell (1) including a first front collector layer (4), an amorphous silicon layer (6) on the first layer (4) and a second conductive layer (8) on the amorphous silicon layer (6). Electrical connection of the second conductive layer (8) to the first layer (4) is made through the amorphous silicon layer (6) at the periphery of the photovoltaic cell, the electrically conductive layer (8) comprising a positive peripheral bus (8), which is connected to the TCO first layer (4) and to at least one positive connection terminal at one end of the positive peripheral bus, and a negative peripheral bus, which is connected to a negative connection terminal, and the positive and negative peripheral buses being asymmetrical relative to one another, with the positive peripheral bus being longer than the negative peripheral bus.

A conductive layer, comprising a first TCO layer, a second TCO layer, a third TCO layer and a fourth TCO layer which are stacked. The first TCO layer is prepared in a first atmosphere, and the first atmosphere is a mixed gas of argon and hydrogen; the second TCO layer is prepared in a second atmosphere, the second atmosphere is a mixed gas of argon, hydrogen, and oxygen, a partial pressure gradient of hydrogen is reduced, and a partial pressure gradient of oxygen is increased; the third TCO layer is prepared in a third atmosphere, and the third atmosphere is a mixed gas of argon and oxygen; the fourth TCO layer is prepared in a fourth atmosphere, the fourth atmosphere is a mixed gas of argon and oxygen, and a partial pressure gradient of oxygen is decreased.

A conductive layer, comprising a first TCO layer, a second TCO layer, a third TCO layer and a fourth TCO layer which are stacked. The first TCO layer is prepared in a first atmosphere, and the first atmosphere is a mixed gas of argon and hydrogen; the second TCO layer is prepared in a second atmosphere, the second atmosphere is a mixed gas of argon, hydrogen, and oxygen, a partial pressure gradient of hydrogen is reduced, and a partial pressure gradient of oxygen is increased; the third TCO layer is prepared in a third atmosphere, and the third atmosphere is a mixed gas of argon and oxygen; the fourth TCO layer is prepared in a fourth atmosphere, the fourth atmosphere is a mixed gas of argon and oxygen, and a partial pressure gradient of oxygen is decreased.

A solar cell, a method for manufacturing the solar cell, and an electric device are provided. The solar cell includes: a substrate provided with a first surface and a second surface arranged opposite to the first surface, the first surface including first regions and second regions, which are alternately arranged; a tunnel oxide layer and a doped polysilicon layer arranged on the first regions in the first surface, the tunnel oxide layer being arranged between the first surface and the doped polysilicon layer; a first passivation layer including a first passivation sub-layer covering the doped polysilicon layer in the first regions and a second passivation sub-layer covering the second regions; and an intrinsic amorphous silicon layer and a doped amorphous silicon layer arranged on the second surface, the intrinsic amorphous silicon layer being arranged between the second surface and the doped amorphous silicon layer.

Disclosed are embodiments of a thin-film photovoltaic technology including a single-junction crystalline silicon solar cell with a photonic-plasmonic back-reflector structure for lightweight, flexible energy conversion applications. The back-reflector enables high absorption for long-wavelength and near-infrared photons via diffraction and light-concentration, implemented by periodic texturing of the bottom-contact layer by nanoimprint lithography. The thin-film crystalline silicon solar cell is implemented in a heterojunction design with amorphous silicon, where plasma enhanced chemical vapor deposition (PECVD) is used for all device layers, including a low-temperature crystalline silicon deposition step. Excimer laser crystallization is used to integrate crystalline and amorphous silicon within a monolithic process, where a thin layer of amorphous silicon is converted to a crystalline silicon seed layer prior to deposition of a crystalline silicon absorber layer via PECVD. The crystalline nature of the absorber layer and the back-reflector enable efficiencies higher than what is achievable in other thin-film silicon devices.

This application provides a heterojunction solar cell and a preparation method. The heterojunction solar cell includes: a silicon substrate being n-type or p-type doped, and having a front surface and a back surface opposite to each other; a first passivation layer and a second passivation layer sequentially located on the front surface of the silicon substrate; a third passivation layer and a fourth passivation layer sequentially located on the back surface of the silicon substrate; a silicon oxycarbide layer located on a surface of the fourth passivation layer away from the silicon substrate, wherein the silicon oxycarbide layer is n-type or p-type doped to form PN junction with the silicon substrate, an atomic percentage of carbon is greater than an atomic percentage of oxygen in the silicon oxycarbide layer. The heterojunction solar cell of the present application improves the performance of the solar cell. The carbon and the oxygen in the silicon oxycarbide layer have a fixed effect on the hydrogen, which is beneficial for reducing the loss of hydrogen.

A solar cell includes a substrate, a transparent conductive film layer and a composite metal grid structure. The transparent conductive film layer is disposed on a side or both sides of the substrate; and the composite metal grid structure is disposed on a side, away from the substrate, of the transparent conductive film layer, and the transparent conductive film layer is electrically connected to the composite metal grid structure. The composite metal grid structure includes a first electrode layer and a second electrode layer, and the first electrode layer is located between the transparent conductive film layer and the second electrode layer. The composite metal grid structure including the first electrode layer and the second electrode layer is used in the solar cell, so that stability is relatively high, consumption of silver may be reduced to lower costs, electrical performance is good, and conversion efficiency can be improved.