Patent classifications
H01L51/30
Salts of phosphorus oxide as N-dopants for organic electronics
An organic electronic component contains a substrate, a first electrode, a second electrode and at least one electron transport layer between the first and second electrode. The electron transport layer is a salt-like derivative of a phosphorus oxo compound as n-dopant.
Transistor manufacturing method and transistor
A transistor manufacturing method includes: forming a first insulator layer of which formation material is a fluorine-containing resin, on a substrate having a source electrode, a drain electrode, and a semiconductor layer so as to cover the semiconductor layer; forming a second insulator layer so as to cover the first insulator layer; forming a base film on at least part of a surface of the second insulator layer; and after depositing a metal which is an electroless plating catalyst on a surface of the base film, forming a gate electrode on the surface of the base film by electroless plating, wherein the forming of the base film is performed by applying a liquid substance which is a formation material of the base film to the surface of the second insulator layer, and the second insulator layer has a higher lyophilic property with respect to the liquid substance than the first insulator layer.
Quantum dot, photoelectric conversion element including the same, light receiving element, photoelectric conversion apparatus, moving object, method for producing quantum dot, and method for producing photoelectric conversion element
A quantum dot includes an inorganic particle, and an organic ligand and an inorganic ligand on a surface of the inorganic particle, and the molar percentage of the inorganic ligand relative to the total amount of the inorganic ligand and the organic ligand is 25% or more and 99.8% or less.
Diketopyrrolopyrrole polymers as organic semiconductors
A polymer includes repeating unit(s) of the formula (I). a, b, c, d, e and f are 0, 1, 2, or 3. Ar.sup.1 and Ar.sup.1′ are independently of each other a group of formula (AR1). Ar.sup.2, Ar.sup.2′, Ar.sup.3, Ar.sup.3′, Ar.sup.4 and Ar.sup.4′ are independently of each other a group of formula (AR2). The polymer is preferably a co-polymer. ##STR00001##
Organic electroluminescent device emitting blue light
The present invention relates to organic electroluminescent devices comprising a light-emitting layer B comprising two host materials, a n-type (electron-transporting) and a p-type (hole-transporting) host material, a thermally activated delayed fluorescence (TADF) material and an emitter material, which exhibits a narrow—expressed by a small full width at half maximum (FWHM)—deep-blue emission at an emission maximum of 440 to 475 nm. Further, the present invention relates to a method for generating blue light by means of an organic electroluminescent device according to the present invention.
Ambipolar field-effect device using engineered work-functions
Devices, circuits, and methods for fabricating circuits. A device having ambipolar characteristics includes a semiconductor layer and multiple gates, a source contact, and a drain contact coupled to the semiconductor layer. One channel may have elections as the majority charge carrier and may be formed proximate to one of the gates. Another channel may have holes as the majority charge carrier and be formed proximate another gate. Each of the channels is generally parallel to the other and couples the source contact to the drain contact. The device may be optimized by adjusting the work-functions in one or more of source and drain contacts or gates to compensate for differences in the effective masses of the majority carriers in each of the channels. The ambipolar nature of the devices allows logic circuits to be fabricated using one or two of the devices.
Multilayer reflection electrode film, multilayer reflection electrode pattern, and method of forming multilayer reflection electrode pattern
A multilayer reflection electrode film includes a Ag film that is formed of Ag or an Ag alloy; and a transparent conductive oxide film that is disposed on the Ag film, in which the transparent conductive oxide film is formed of an oxide that includes Zn and Ga and further includes one element or two or more elements selected from the group consisting of Sn, Y, and Ti.
Circular polarizer and display
The present disclosure provides a circular polarizer for use on a display including a transparent substrate disposed on the display and a plurality of strip dielectric wire grids disposed on the transparent substrate; each dielectric wire grid is provided with a wire grid array formed by a plurality of wire grids, and each of the dielectric wire grids respectively corresponds to a region above one of R sub-pixel unit, G sub-pixel unit and B sub-pixel unit of the display and has a corresponding thickness, so that each of the dielectric wire grids forms a quarter-phase delay on the sub-pixel units of the corresponding display. The implementation of the disclosure can solve the problem that the traditional organic phase retarder can not achieve the wide circular partial effect, and improve the visual effect.
Organic light emitting display panel having a reflector in the pixel definition layer
An organic light emitting display panel is provided, includes a substrate, a transparent anode, a pixel definition layer, an organic light emitting layer and a plurality of cathodes having reflective function provided on the substrate. A plurality of open slots is provided on the pixel definition layer. The anodes are provided on one end of the open slot adjacent to the substrate, the organic light emitting layer is packed in the open slot, the cathodes are provided on another side of the open slot away from the substrate. A method of manufacturing an organic light emitting display panel is also provided. The reflective cathode is made only in light emitting region, can prevent sub-pixels from light interference emitted from adjacent sub-pixels as well as increase color purity and improve color shift phenomenon in a bottom emission type device.
Blade coating on nanogrooved substrates yielding aligned thin films of high mobility semiconducting polymers
A method for enhancing charge carrier mobility of a field-effect transistor device. The method comprises generating uniaxial nanogrooves on a substrate and blade coating a solution comprising a semiconducting polymer onto the substrate. The polymer solution is spread onto the substrate in a direction parallel to the nanogrooves and a main-chain axis of the polymer is parallel to the nanogrooves. The semiconducting polymer can be then annealed, so that a polymer film is formed which is layered on top of the substrate, with polymer chains aligned parallel to a direction of charge carrier movement.