A thin-film transistor (TFT) array substrate includes a transistor disposed on a base substrate and a storage capacitor electrically connected to the transistor. The transistor includes a gate electrode, an active layer electrically insulated from the gate electrode, the active layer including a semiconductor material, and a first electrode and a second electrode disposed to be spaced apart from each other on the active layer. The storage capacitor includes a lower electrode including a light inflow path, and an upper electrode disposed to face the lower electrode and electrically connected to the second electrode.

A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other, and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode 21 and the second electrode 22. The photoelectric conversion material layer 30 is formed of the following structural formula (1).

##STR00001##

An optoelectronic device comprising a mesa structure including: a first and a second semiconductor portions forming a p-n junction, a first electrode electrically connected to the first portion which is arranged between the second portion and the first electrode, the device further comprising: a second electrode electrically connected to the second portion, an element able to ionize dopants of the first and/or second semiconductor portion through generating an electric field in the first and/or second semiconductor portion and overlaying at least one part of the side flanks of at least one part of the first and/or second semiconductor portion and of at least one part of a space charge zone formed by the first and second semiconductor portions, upper faces of the first electrode and of the second electrode form a substantially planar continuous surface.

A photoelectric conversion element includes (a-1) a first electrode 21 and a second electrode 22 disposed apart from each other and (a-2) a photoelectric conversion material layer 30 disposed between the first electrode and the second electrode. The photoelectric conversion material layer contains a substance formed of the following structural formula (1).

##STR00001##

A detector comprises a plurality of photoelectric converters to output an electrical signal corresponding to an incident light, and a plurality of filter circuits provided corresponding to each of the plurality of photoelectric converters or to each of a plurality of element groups respectively including a predetermined number of the photoelectric converters of the plurality of photoelectric converters, the plurality of filter circuits attenuating a signal having a predetermined frequency from the electrical signal output from the plurality of photoelectric converters,

In the above-described detector, the plurality of photoelectric converters may be provided in a first substrate, and the plurality of filter circuits may be provided in a second substrate laminated on the first substrate.

Provided is a photoelectric conversion element including: a lower electrode, a charge blocking layer which suppresses injection of a charge from the lower electrode, an organic layer which includes a photoelectric conversion layer, and an upper electrode which includes a transparent electrode layer, which are laminated in this order on a substrate. The photoelectric conversion layer is configured of an amorphous film and has a bulk hetero-structure of a P-type organic semiconductor and an N-type organic semiconductor formed of fullerenes. A difference between the ionization potential of the photoelectric conversion layer having the bulk hetero-structure and the electron affinity of the N-type semiconductor is 1.30 eV or greater.

According to an aspect, a detection device includes: a plurality of photodiodes arranged on a substrate; a front light including a light guide plate disposed so as to overlap the photodiodes and a light source configured to emit light to a side surface of the light guide plate; and an optical filter layer provided between the photodiodes and the light guide plate of the front light. The optical filter layer includes a plurality of light guide paths that at least partially overlap the photodiodes, and a light-blocking portion having higher absorptance of the light than the light guide paths. The detection device includes a reflective layer that is provided between the light guide plate and the optical filter layer and overlaps the light-blocking portion of the optical filter layer.

A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer provided between the first electrode and the second electrode, and including a first organic semiconductor material, a second organic semiconductor material, and a third organic semiconductor material that have mother skeletons different from one another. The first organic semiconductor material is one of fullerenes and fullerene derivatives. The second organic semiconductor material in a form of a single-layer film has a higher linear absorption coefficient of a maximal light absorption wavelength in a visible light region than a single-layer film of the first organic semiconductor material and a single-layer film of the third organic semiconductor material. The third organic semiconductor material has a value equal to or higher than a HOMO level of the second organic semiconductor material.

A first light receiving element according to an embodiment of the present disclosure includes a plurality of pixels, a photoelectric converter that is provided as a layer common to the plurality of pixels, and contains a compound semiconductor material, and a first electrode layer that is provided between the plurality of pixels on light incident surface side of the photoelectric converter, and has a light-shielding property.

[Object]

To provide an image capturing apparatus and electronic equipment that can suppress occurrence of a flare.

[Solving Means]

An image capturing apparatus includes a photoelectric conversion region having a photoelectric conversion portion for each pixel, and a light controlling region laminated on the photoelectric conversion region and configured to convert an optical characteristic incident thereon. The light controlling region has a plurality of unit structural bodies, and each of the plurality of unit structural bodies has a plurality of meta structural bodies. The plurality of meta structural bodies include two or more meta structural bodies whose optical characteristics are different from each other.