Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter has predetermined spectral characteristics, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 110.sup.4 g/m.sup.2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.

Provided is a photodetector element having a photoelectric conversion element, an optical filter provided on a light incident side of the photoelectric conversion element, a dielectric multi-layer film provided on a light incident side of the optical filter, and an interlayer provided between the photoelectric conversion element and the optical filter, in which the photoelectric conversion element has a quantum dot layer, a first electrode, and a second electrode, the optical filter is a laminated film including a first filter layer including a coloring material and a second filter layer including a coloring material, and the interlayer includes at least one kind of atom selected from the group consisting of Si, Al, Zr, Sn, Zn, Ce, and Hf, or includes a paraxylene polymer, or has a water vapor permeability as determined by a method in accordance with JIS K 7129 of 110.sup.4 g/m.sup.2/day or less. Provided also are an image sensor and a method for manufacturing a photodetector element.

One aspect of the present invention relates to a photovoltaic cell. In one embodiment, the photovoltaic cell includes a first conductive layer, an N-doped semiconductor layer formed on the first conductive layer, a first silicon layer formed on the N-doped semiconductor layer, a nanocrystalline silicon (nc-Si) layer formed on a first silicon layer, a second silicon layer formed on the nc-Si layer, a P-doped semiconductor layer on the second silicon layer, and a second conductive layer formed on the P-doped semiconductor layer, where one of the first silicon layer and the second silicon layer is formed of amorphous silicon, and the other of the first silicon layer and the second silicon layer formed of polycrystalline silicon.

The present invention provides a material for photoelectric conversion elements for use in imaging elements which comprises a compound represented by the following formula (1). The material for photoelectric conversion elements for use in imaging elements, which comprises a compound represented by the following formula (1), is used to produce a photoelectric conversion element which is excellent in terms of hole- or electron-leakage prevention, thermal resistance to processing temperatures, transparency to visible light, etc. (In formula (1), R.sub.1 and R.sub.2 each independently represent a substituted or unsubstituted aromatic group.)

##STR00001##

The present disclosure relates to an optical receiver. The optical receiver has a first photosensor and a second photosensor disposed within a substrate. The first photosensor has a first angled surface located on a first side of a depression within the substrate, and the second photosensor has a second angled surface located on a second side of the depression, opposite the first side of the depression. A plurality of blocking structures are disposed over the substrate. The plurality of blocking structures block radiation that is not incident on the first and second angled surfaces. By receiving incident radiation on the first and second angled surfaces, the first and second photosensors are able to generate directional-dependent photocurrents that vary depending upon an angle of incident radiation. Based upon the directional-dependent photocurrents, an angle of incident radiation can be determined.

A capacitance diode or variable capacitance diode includes first and second electrodes and a layer configuration disposed in contact-making fashion between the two electrodes. The layer configuration has, one after the other in a direction from the first electrode towards the second electrode, a layer formed of a ferroelectric material and an electrically insulating layer formed of a dielectric material having electrically charged defects. A method for producing a capacitance diode or a variable capacitance diode, a storage device and a detector including a capacitance diode or a variable capacitance diode are also provided.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

An image capturing and display apparatus comprises a plurality of photoelectric conversion elements for converting incident light from the outside of the image capturing and display apparatus to electrical charge signals, and a plurality of light-emitting elements for emitting light of an intensity corresponding to the electrical charge signals acquired by the plurality of photoelectric conversion elements. A pixel region is defined as a region in which the plurality of photoelectric conversion elements are arranged in an array. Signal paths for transmitting signals from the plurality of photoelectric conversion elements to the plurality of light-emitting elements lie within the pixel region.

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.

A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are two-dimensionally arranged, wherein each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter. One photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts light in a visible light region, the other photoelectric conversion region photoelectrically converts light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.