According to an aspect, a detection device includes: a first detection circuit including a first photodiode sensitive to first light and a second photodiode sensitive to second light; and a second detection circuit including a third photodiode sensitive to third light. The first photodiode and the second photodiode are coupled in series and in opposite directions to form a first detection element. One end side of the first detection element is coupled to a first signal line via a first transistor. Another end side of the first detection element is configured to be supplied with a first drive signal. A cathode of the third photodiode is coupled to a second signal line via a second transistor. An anode of the third photodiode is configured to be supplied with a second drive signal.

A photoelectric conversion element 10A according to an embodiment of the present disclosure includes: a first electrode 21; a second electrode 23 that is disposed to be opposed to the first electrode 21; and a photoelectric conversion layer 22 that is provided between the first electrode 21 and the second electrode 23. The photoelectric conversion layer 22 includes a hole transporting material as a first organic semiconductor material. The hole transporting material absorbs blue light.

According to an aspect, a detection device includes: a plurality of photodiodes arranged on a substrate; a front light including a light guide plate disposed so as to overlap the photodiodes, a light source configured to emit light to a first side surface of the light guide plate, and a plurality of scattering portions that are provided on the light guide plate and configured to scatter light from the light source; an optical filter layer including at least one light-blocking layer that has a plurality of openings; and a plurality of lenses provided such that each of the photodiodes overlaps more than one of the lenses in plan view.

A purpose of the present invention is to countermeasure a connection failure of an electrode in an optical sensor using PIN type photo conductive film. A structure of the present invention is as follows. A semiconductor device including an optical sensor, the optical sensor including: a thin film transistor formed on a substrate, and a photo diode formed above the thin film transistor, in which the photo diode includes an anode, a photo conductive film and a cathode, the cathode is constituted from a titanium film, and a first transparent conductive film is formed between the titanium film and the photo conductive film.

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

The present technology relates to a solid-state imaging device and an electronic apparatus capable of improving sensitivity while suppressing deterioration of color mixing. The solid-state imaging device includes: a substrate; a first photoelectric conversion region that is provided in the substrate; a second photoelectric conversion region that is provided in the substrate; a trench that is provided between the first photoelectric conversion region and the second photoelectric conversion region and penetrates through the substrate; a first concave portion region that has a plurality of concave portions provided on a light receiving surface side of the substrate, above the first photoelectric conversion region; and a second concave portion region that has a plurality of concave portions provided on the light receiving surface side of the substrate, above the second photoelectric conversion region. The technology of the present disclosure can be applied to, for example, a backside illumination solid-state imaging device and the like.

In a light detection device, switches are connected in parallel to each other. Each of the switches is connected to an APD. A read line electrically connects the switch and a signal processor to each other. The switch is configured such that a second terminal is connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in a conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage greater than or equal to a breakdown voltage is applied to the APD in the conductive state. The switch is configured such that the second terminal is not connected to the read line and a voltage less than a breakdown voltage is applied to the APD in the conductive state.

Provided is a control circuit and a distance measurement system. The control circuit includes first wiring to which a first power supply voltage is applied, second wiring to which a second power supply voltage is applied. The control circuit further includes a current supply unit, a first withstand voltage unit, an inverter connected to a cathode of the SPAD element, and a second withstand voltage unit. Furthermore, the control circuit includes an N-type first transistor that is provided between the cathode of the SPAD element and an input terminal of the inverter, and has a gate connected to the second wiring, and a P-type second transistor that is provided between the second wiring and a source of the first transistor, and has a gate connected to an output terminal of the inverter.

A detection device, including a substrate, a switch element, a photosensitive element, and a planarization layer, is provided. The switch element is disposed on the substrate. The photosensitive element includes a bottom electrode, a top electrode, and a first semiconductor disposed between the bottom electrode and the top electrode. The planarization layer is disposed between the bottom electrode and the switch element. The bottom electrode is coupled to the switch element.

A detection device, including a substrate, a switch element, a photosensitive element, and a planarization layer, is provided. The switch element is disposed on the substrate. The photosensitive element includes a bottom electrode, a top electrode, and a first semiconductor disposed between the bottom electrode and the top electrode. The planarization layer is disposed between the bottom electrode and the switch element. The bottom electrode is coupled to the switch element.