Provided are a material that achieves higher sensitivity and higher resolution of a photoelectric conversion element for imaging, and a photoelectric conversion element for imaging using the above material. A material for a photoelectric conversion element for imaging, the material having a structure of the following general formula (1), wherein L each independently represents a single bond, an aromatic hydrocarbon group having 6 to 30 carbon atoms, or the like; a represents the number of substitutions, and represents an integer of 1 to 6; Ar.sup.1 each independently represents a group represented by the following formula (2); and Ar.sup.2 each independently represents an aromatic heterocyclic group having 3 to 30 carbon atoms and containing a nitrogen-containing six-membered cyclic structure, or the like, provided that a group bonded to L is the aromatic heterocyclic group. The ring B represents a heterocyclic ring represented by the formula (2a) and fused with an adjacent ring at any position; * in the formula (2) represents a bonding position to L in the formula (1); and X represents O, S, or NAr.sup.3. ##STR00001##

A photodetector element has a photoelectric conversion layer containing aggregates of semiconductor quantum dots QD1 that contain a metal atom and containing a ligand L1 that is coordinated to the semiconductor quantum dot QD1, and a hole transport layer containing aggregates of semiconductor quantum dots QD2 that contains a metal atom and containing a ligand L2 that is coordinated to the semiconductor quantum dot QD2, the hole transport layer being arranged on the photoelectric conversion layer, where the ligand L2 includes a ligand represented by any one of Formulae (A) to (C). ##STR00001##

A purpose of the present invention is to countermeasure a connection failure of an electrode in an optical sensor using PIN type photo conductive film. A structure of the present invention is as follows. A semiconductor device including an optical sensor, the optical sensor including: a thin film transistor formed on a substrate, and a photo diode formed above the thin film transistor, in which the photo diode includes an anode, a photo conductive film and a cathode, the cathode is constituted from a titanium film, and a first transparent conductive film is formed between the titanium film and the photo conductive film.

An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13.sub.C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13.sub.B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

[Problem] To implement a negative voltage monitoring circuit with high accuracy. [Solution] A negative voltage monitoring circuit includes a first voltage-dividing circuit, a first amplifier circuit, a second amplifier circuit, and an error determination circuit. The first voltage-dividing circuit divides a power supply voltage and outputs a first voltage. The first amplifier circuit is configured such that the first voltage is inputted to a noninverting input terminal and an output voltage is subjected to negative feedback. The second amplifier circuit is configured such that a second voltage is inputted to the noninverting input terminal, the second voltage being obtained by dividing a potential difference between the power supply voltage and a voltage to be monitored, the voltage being applied to an anode of a light receiving element, and an output voltage is subjected to negative feedback. The error determination circuit outputs an error signal on the basis of a difference between the output of the first amplifier circuit and the output of the second amplifier circuit.

To perform accurate distance measurement from the distance measuring start point even when the surrounding brightness changes suddenly. A distance measuring device includes: a light receiving unit that receives a reflected light pulse signal reflected by an object; a distance measuring unit that performs distance measuring processing on the basis of an output signal of the light receiving unit; and a bias control unit that controls a bias voltage of the light receiving unit before the distance measuring unit starts the distance measuring processing.

An electromagnetic wave detector includes a heat-absorbing layer, an insulating film, a two-dimensional material layer, and a first electrode portion. The heat-absorbing layer includes a thermoelectric material layer and a phase-transition material layer. The insulating film is disposed on part of the heat-absorbing layer. The two-dimensional material layer is disposed on the heat-absorbing layer and the insulating film and is electrically connected to the heat-absorbing layer. The first electrode portion is disposed on the insulating film and is electrically connected to the heat-absorbing layer with the two-dimensional material layer in between.

In an optical semiconductor array (1A) having a semiconductor substrate (10) and a plurality of mesa-shaped optical semiconductor elements (11a to 11d) separated by grooves (12a, 12b) on the semiconductor substrate (10), each of the plurality of optical semiconductor elements (11a to 11d) comprises a semiconductor laminated part (20) including a first semiconductor layer (20a) in contact with the semiconductor substrate (10), and a connecting hole (21a) formed at a portion separated from the groove (12a, 12b) in the semiconductor laminated part (20) so as to extend from a surface of the semiconductor laminated part (20) to the first semiconductor layer (20a).

In an optical semiconductor array (1A) having a semiconductor substrate (10) and a plurality of mesa-shaped optical semiconductor elements (11a to 11d) separated by grooves (12a, 12b) on the semiconductor substrate (10), each of the plurality of optical semiconductor elements (11a to 11d) comprises a semiconductor laminated part (20) including a first semiconductor layer (20a) in contact with the semiconductor substrate (10), and a connecting hole (21a) formed at a portion separated from the groove (12a, 12b) in the semiconductor laminated part (20) so as to extend from a surface of the semiconductor laminated part (20) to the first semiconductor layer (20a).

ESD surge protection that does not depend on pixel circuits is disclosed. In one example, a light receiving device includes an effective pixel including a light receiving element that detects presence or absence of photons and a readout circuit that processes a signal output from the light receiving element. A first terminal applies a predetermined voltage to the light receiving element, a second terminal applies a first power supply voltage to the readout circuit, and a protection circuit protects a light receiving element and a circuit element of the readout circuit from overvoltage. The protection circuit includes a light receiving element of a dummy pixel connected to the first terminal, and a diode element connected to the light receiving element of the dummy pixel in a polarity relationship in a reverse direction between the light receiving element of the dummy pixel and the second terminal.