A memory device includes a plurality of sub-word line drivers with, each sub-word line driver configured to receive a main word line signal and configured to drive a respective local word line to at least one of an active state, a soft-landing state, an off state based on the main word line signal and a phase signal. The memory device also includes a plurality of phase drivers with each phase driver configured to generate the respective phase signal. The memory device can further include a processing device configured to drive the respective local word line to the soft-landing state prior to entering the off state when transitioning from the active state to the off state so as to provide row hammer stress mitigation between adjacent local word lines corresponding to the plurality of sub-word line drivers. Each sub-word line driver includes a diode-connected transistor.

A method of operating a memory controller performing activation of a memory device, the method including determining a selection signal for each tile column in a memory block of the memory device by activating respective local word lines, wherein the block selection signal is determined by performing a radix n operation on a vector identifying elements to be read or written.

Aspects of the disclosure provide a chip package that includes a first die and a second die. The first die has a processing circuit and a first interface circuit. The second die is disposed in a proximity to the first die and coupled to the first die. The second die includes internal functional circuits, two or more second interface circuits with an identical configuration, and a switch circuit. A specific second interface circuit is electrically connected to the first interface circuit via wires. The switch circuit is configured to select the specific second interface circuit from the two or more second interface circuits, and couple the specific second interface circuit to the internal functional circuits on the second die.

In various embodiments, an apparatus, system, and method may increase data integrity in a redundant storage system. In one embodiment, a request is received for data stored at a storage system having a plurality of storage elements, where one or more of the plurality of storage elements include parity information. A determination is made that one of the plurality of storage elements is unavailable, the unavailable storage element being a functional storage element and including at least a portion of the data. Responsive to the determination, the data is reconstructed based on at least a portion of the parity information and data from one or more of the plurality of storage elements other than the unavailable storage element; a response is provided to the request such that the response includes the reconstructed data.

A storage device may include a controller and a memory array including a plurality of dies arranged into a plurality of channels. In some examples, the controller may be configured to define, from the memory array, a plurality of die-sets based on respective chip enable lines associated with the plurality of dies, wherein each die-set of the plurality of die-sets includes at least one die from each of the plurality of channels; define, from a selected die-set of the plurality of die-sets, a plurality of blocksets, wherein each blockset includes a block from each die of the selected die-set; receive a unit of data to be stored; and issue commands that cause the unit of data to be stored in blocks of a selected blockset of the plurality of blocksets.