A photosensitive chip, a manufacturing method thereof, and a photosensitive module are provided. The photosensitive chip includes an isosceles trapezoid body, a positive electrode, and a negative electrode. The isosceles trapezoid body comprises an N-type semiconductor layer and a P-type semiconductor layer. The P-type semiconductor layer is disposed adjacent to the N-type semiconductor layer. The positive electrode is electrically connected to the P-type semiconductor layer, and the negative electrode is electrically connected to the N-type semiconductor layer.

A photosensitive chip, a manufacturing method thereof, and a photosensitive module are provided. The photosensitive chip includes an isosceles trapezoid body, a positive electrode, and a negative electrode. The isosceles trapezoid body comprises an N-type semiconductor layer and a P-type semiconductor layer. The P-type semiconductor layer is disposed adjacent to the N-type semiconductor layer. The positive electrode is electrically connected to the P-type semiconductor layer, and the negative electrode is electrically connected to the N-type semiconductor layer.

A light receiving device includes a first light-receiving element and a second light-receiving element, each including a semiconductor substrate including a light receiving region, and a support substrate including a supporting surface supporting the first light-receiving element and the second light-receiving element. The semiconductor substrate of the first or second light-receiving element includes a main surface including the light receiving region, a back surface on an opposite side of the main surface in a perpendicular direction, and a recess sunk from the back surface towards the main surface. The other semiconductor substrate of the first light-receiving element or second light-receiving element is disposed inside the recess. An angle formed between a side surface of the recess and the supporting surface is 75 or greater and 105 or less, where the side surface is continuous from an opening edge of the recess to a bottom surface of the recess.

A light receiving device includes a first light-receiving element and a second light-receiving element, each including a semiconductor substrate including a light receiving region, and a support substrate including a supporting surface supporting the first light-receiving element and the second light-receiving element. The semiconductor substrate of the first or second light-receiving element includes a main surface including the light receiving region, a back surface on an opposite side of the main surface in a perpendicular direction, and a recess sunk from the back surface towards the main surface. The other semiconductor substrate of the first light-receiving element or second light-receiving element is disposed inside the recess. An angle formed between a side surface of the recess and the supporting surface is 75 or greater and 105 or less, where the side surface is continuous from an opening edge of the recess to a bottom surface of the recess.

A semiconductor apparatus includes a first substrate that includes a first wiring structure and a first semiconductor layer, and a second substrate that includes a second wiring structure and a second semiconductor layer, wherein a first metal pattern and a second metal pattern are bonded to electrically connect the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer is larger than the first semiconductor layer in a plan view seen from a side with the first semiconductor layer, wherein the second wiring structure includes a guard structure that has a third metal pattern and is disposed at a same height as the second metal pattern, and wherein, in the plan view, a contact portion between the third metal pattern and a diffusion preventing film in contact with the third metal pattern is disposed at a position outside the first semiconductor layer.

A semiconductor apparatus includes a first substrate that includes a first wiring structure and a first semiconductor layer, and a second substrate that includes a second wiring structure and a second semiconductor layer, wherein a first metal pattern and a second metal pattern are bonded to electrically connect the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer is larger than the first semiconductor layer in a plan view seen from a side with the first semiconductor layer, wherein the second wiring structure includes a guard structure that has a third metal pattern and is disposed at a same height as the second metal pattern, and wherein, in the plan view, a contact portion between the third metal pattern and a diffusion preventing film in contact with the third metal pattern is disposed at a position outside the first semiconductor layer.

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.

A photodetector including a substrate having a semiconductor material layer, such as a silicon-containing layer, and a germanium-based well embedded in the semiconductor material layer, where a gap is located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer. The gap between the lateral side surface of the germanium-based well and the surrounding semiconductor material layer may reduce the surface contact area between the germanium-containing material of the well and the surrounding semiconductor material, which may be a silicon-based material. The formation of the gap located between a lateral side surface of the germanium-based well and the surrounding semiconductor material layer may help minimize the formation of crystal defects, such as slips, in the germanium-based well, and thereby reduce the dark current and improve photodetector performance.

The present disclosure provides an integrated circuit (IC) structure with a solar cell and an image sensor array. An integrated structure according to the present disclosure includes a first substrate including a plurality of photodiodes, an interconnect structure disposed on the first substrate, a first bonding layer disposed on the interconnect structure, a second bonding layer disposed on the first bonding layer, a second substrate disposed on the second bonding layer, and a transparent conductive oxide layer disposed on the second substrate.

A pixel structure and an image sensor are provided, to improve photoelectric conversion efficiency under a weak light condition and resolve a problem that an image generated in weak light is dim. The pixel structure includes a metallic ground plane, and a substrate unit cell located on the metallic ground plane. The pixel structure further includes a nano antenna unit that is located on the substrate unit cell and that includes one or more nano antennas, each of the one or more nano antennas corresponding to one optical band and including M parts A nano gap is formed between the M parts, a metal-insulator-metal diode is formed at the nano gap, and M is a multiple of 2. The pixel structure further includes a packaging unit that covers the nano antenna unit. The image sensor includes a plurality of pixel structures.