A pixel structure and an image sensor are provided, to improve photoelectric conversion efficiency under a weak light condition and resolve a problem that an image generated in weak light is dim. The pixel structure includes a metallic ground plane, and a substrate unit cell located on the metallic ground plane. The pixel structure further includes a nano antenna unit that is located on the substrate unit cell and that includes one or more nano antennas, each of the one or more nano antennas corresponding to one optical band and including M parts A nano gap is formed between the M parts, a metal-insulator-metal diode is formed at the nano gap, and M is a multiple of 2. The pixel structure further includes a packaging unit that covers the nano antenna unit. The image sensor includes a plurality of pixel structures.

The present invention relates to a photothermal effect-based mid-infrared detecting apparatus including an optical sensor that detects visible light, an infrared light layer disposed on the optical sensor and including a material that absorbs a mid-infrared light, and a processor that detects the mid-infrared light by analyzing a sensor signal output from the optical sensor, wherein the optical sensor receives heat generated by the mid-infrared light incident on the infrared light layer and outputs the sensor signal modulated by the heat to the processor.

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a lateral LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body; and a second electrode in contact with the first surface of the semiconductor body, the first and second electrodes defining an area through which light energy from at least one light source can impinge on the first surface, wherein the LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

A light controlled semiconductor switch (LCSS), method of making, and method of using are provided. In embodiments, a lateral LCSS includes: a semiconductor body including a photoactive layer of gallium nitride (GaN) doped with carbon; a first electrode in contact with a first surface of the semiconductor body; and a second electrode in contact with the first surface of the semiconductor body, the first and second electrodes defining an area through which light energy from at least one light source can impinge on the first surface, wherein the LCSS is configured to switch from a non-conductive off-state to a conductive on-state when the light energy impinging on the semiconductor body is sufficient to raise electrons within the photoactive layer into a conduction band of the photoactive layer.

Provided is a semiconductor light-receiving element having high light reception sensitivity and high ESD withstand voltage. The semiconductor light-receiving element (100) includes an n-type InP substrate (110), an n-type InGaAs light-absorbing layer (130), and an InP window layer (140). A p-type impurity diffusion region (150) that reaches an upper part of the n-type InGaAs light-absorbing layer (130) is formed in the InP window layer (140). The n-type InGaAs light-absorbing layer (130) has a thickness of 2.2 m or more and a carrier density due to an n-type impurity of 2.510.sup.15/cm.sup.3 or more.

Provided is a semiconductor light-receiving element having high light reception sensitivity and high ESD withstand voltage. The semiconductor light-receiving element (100) includes an n-type InP substrate (110), an n-type InGaAs light-absorbing layer (130), and an InP window layer (140). A p-type impurity diffusion region (150) that reaches an upper part of the n-type InGaAs light-absorbing layer (130) is formed in the InP window layer (140). The n-type InGaAs light-absorbing layer (130) has a thickness of 2.2 m or more and a carrier density due to an n-type impurity of 2.510.sup.15/cm.sup.3 or more.

Provided is a semiconductor light-receiving element including: a substrate; a semiconductor lamination portion formed on a first region of the substrate; and a first electrode and a second electrode which are electrically connected to the semiconductor lamination portion. The semiconductor lamination portion includes a light absorbing layer that has a first conductivity type and contains In.sub.xGa.sub.1-xAs, a buffer layer that has the first conductivity type and is provided between the substrate and the light absorbing layer, and a second region that has a second conductivity type different from the first conductivity type, is located on a side opposite to the substrate with respect to the light absorbing layer, and is in contact with the light absorbing layer.

The present disclosure provides a semiconductor structure and a method of manufacturing the same. The semiconductor structure includes a sensing device, a solar cell, and an interconnecting structure. The solar cell is disposed above the sensing device and is electrically connected to the sensing device. The interconnecting structure is disposed between the sensing device and the solar cell and has a first surface facing the solar cell and a second surface facing the sensing devices. The interconnecting structure comprises a first energy storage component and a second energy storage component. The first energy storage component is disposed closer to the first surface of the interconnecting structure than the second energy storage component.

A photodiode with improved response, particular in the blue light portion of the spectrum, is disclosed. An oxide window is formed adjacent a silicide junction. An etch stop layer is applied over the silicide junction, and the oxide window is then etched to form a thin film. A nitride layer is then applied. The resulting photodiode has increased transmission of blue light.

A photodetector device includes a group of pixels. A common reference electrode is shared between the pixels of the group of pixels. A continuous and common colloidal quantum dot thin film is shared by the pixels, including a photosensitive region capable of photogenerating electric charges. An electrode for collecting photogenerated charges is provided for each pixel. The electrodes collecting the charges are configured to collect electrically positive photogenerated charges.