A photodetector device includes a group of pixels. A common reference electrode is shared between the pixels of the group of pixels. A continuous and common colloidal quantum dot thin film is shared by the pixels, including a photosensitive region capable of photogenerating electric charges. An electrode for collecting photogenerated charges is provided for each pixel. The electrodes collecting the charges are configured to collect electrically positive photogenerated charges.

The presently disclosed subject matter relates generally to GaAsSb NWs (NW) grown on a graphitic substrate, to methods of growing such NWs, and to use of such NWs in applications such as flexible near infrared photodetector.

The presently disclosed subject matter relates generally to GaAsSb NWs (NW) grown on a graphitic substrate, to methods of growing such NWs, and to use of such NWs in applications such as flexible near infrared photodetector.

A quantum dot ensemble of an embodiment of the present disclosure includes a plurality of quantum dots (120) each including a core (121) including a compound semiconductor and a shell layer (122) including one or more organic ligands (122A) coordinated to a surface of the core (121) and an oxide film (122B) that covers a portion of the surface of the core (121) to which the one or more organic ligands (122A) are not coordinated, and adjacent quantum dots of the plurality of quantum dots (120) are adjacent through the one or more organic ligands (122A) or the oxide film (122B).

A quantum dot ensemble of an embodiment of the present disclosure includes a plurality of quantum dots (120) each including a core (121) including a compound semiconductor and a shell layer (122) including one or more organic ligands (122A) coordinated to a surface of the core (121) and an oxide film (122B) that covers a portion of the surface of the core (121) to which the one or more organic ligands (122A) are not coordinated, and adjacent quantum dots of the plurality of quantum dots (120) are adjacent through the one or more organic ligands (122A) or the oxide film (122B).

A light receiving element includes a plurality of pixels, each pixel includes a photoelectric conversion unit that generates carriers according to an amount of received light; a first conductor portion is disposed inside a first insulator that provides insulation between adjacent pixels; a second conductor portion is disposed on an outer edge side of a light receiving region of the photoelectric conversion unit and has an opening region; and a charge accumulation region corresponds to the opening region and is disposed further on an outer edge side than the second conductor portion.

A light receiving element includes a plurality of pixels, each pixel includes a photoelectric conversion unit that generates carriers according to an amount of received light; a first conductor portion is disposed inside a first insulator that provides insulation between adjacent pixels; a second conductor portion is disposed on an outer edge side of a light receiving region of the photoelectric conversion unit and has an opening region; and a charge accumulation region corresponds to the opening region and is disposed further on an outer edge side than the second conductor portion.

A photodetector includes: a photoelectric conversion section; and an optical layer provided to cover the photoelectric conversion section, in which the optical layer includes: a plurality of pillars arranged side by side in a plane direction of a layer to guide at least light to be detected among incident light to the photoelectric conversion section; and a reflection suppressing film provided on at least one of an upper surface and a lower surface of the pillar, and the reflection suppressing film has a non-flat portion including at least one of a recess and a protrusion.

A photodetector includes: a photoelectric conversion section; and an optical layer provided to cover the photoelectric conversion section, in which the optical layer includes: a plurality of pillars arranged side by side in a plane direction of a layer to guide at least light to be detected among incident light to the photoelectric conversion section; and a reflection suppressing film provided on at least one of an upper surface and a lower surface of the pillar, and the reflection suppressing film has a non-flat portion including at least one of a recess and a protrusion.

Disclosed are a photodiode element, and a sensor and an electronic device including the same. The photodiode element includes a first electrode, a second electrode facing the first electrode, a photoelectric conversion layer between the first electrode and the second electrode and having an absorption spectrum in a first wavelength spectrum, a light-emitting layer between the photoelectric conversion layer and the second electrode and having an emission peak wavelength belonging to the first wavelength spectrum, and a first charge transport layer between the photoelectric conversion layer and the light-emitting layer.