An organic photodetector (OPD) comprises a microcavity defined by a reflective electrode and a semi-transparent electrode, wherein the microcavity comprises a transparent conductive oxide layer and an active layer comprising an n-type organic semiconductor and a p-type organic semiconductor, and wherein the blend of the n-type organic semiconductor and the p-type organic semiconductor exhibits low absorption at the resonance wavelength, which results in an excellent optical sensitivity in a favorably narrow wavelength region and allows to tune the response to different wavelengths depending on the desired application. In addition, methods of producing such organic photodetectors and methods of tuning the resonance of a microcavity formed in an organic photodetector (OPD) to a predetermined wavelength are provided.

Provided are van der Waals (VDW) films comprising one or more transition metal chalcogenide (TMD) films. Also provided are methods of making VDW films. The methods are based on transfer of monolayer TMD films under vacuum, for example, using a handle layer. Also provided are apparatuses and devices comprising one or more VDW film.

Provided is a method for manufacturing a field-effect transistor, the method including the steps of: forming a gate electrode on the surface of a substrate; forming a gate insulating layer on the gate electrode; forming a conductive film containing a conductor and a photosensitive organic component by a coating method on the gate insulating layer; exposing the conductive film from the rear surface side of the substrate with the gate electrode as a mask; developing the exposed conductive film to form a source electrode and a drain electrode; and forming a semiconductor layer by a coating method between the source electrode and the drain electrode. This method makes it possible to provide an FET, a semiconductor device, and an RFID which can be prepared by a simple process, and which have a high mobility, and have a gate electrode and source/drain electrodes aligned with a high degree of accuracy.

Provided are an electronic device and an organic electroluminescence element both of which are excellent in optical properties as well as long-term storage stability and scratch resistance. Herein, the electronic device includes at least one functional layer on a resin substrate, and the electronic device is configured so that the functional layer contains a component with a structure of X—Y—X′ as a resin component; X and X′ independently include at least any one of the formulae (1)˜(7) respectively; and Y is a bivalent group including at least one S atom and one aromatic ring.

The present invention teaches a CF substrate, its manufacturing method, and a WOLED display device. The CF substrate includes a substrate, a pixel definition layer, and multiple filter patterns. The pixel definition layer has multiple openings, each corresponding to a sub-pixel area of the substrate. Each filter pattern is disposed on the substrate inside an opening of the pixel definition layer, and includes a quantum dot layer and a filter layer sequentially formed on the substrate. The CF substrate requires a single lithographic process to form the openings. The quantum dot layers and filter layers of the filter patterns are then formed by solution film formation in the openings, effectively simplifying the manufacturing process and enhancing the production efficiency. Applying the CF substrate to a WOLED display device also enhances the lighting efficiency, color gamut, and product quality of the WOLED display device.

The present application provides a display substrate, including an array substrate and a pixel defining layer. The pixel defining layer is formed on the array substrate and defines a plurality of sub-pixel areas. The pixel defining layer further defines a first groove, and the first groove is arranged to surround a sub-pixel area of the plurality of sub-pixel areas. When the display panel receives a falling impact, the impact is transferred to the pixel defining layer, so that the pixel defining layer expands in its extending direction. The groove is similar to a structure of a wall performing a function of releasing stresses and reducing expansion of the pixel defining layer. The present application further discloses a method for manufacturing a display substrate, and a display panel.

Gated organic light-emitting diodes or vertical light emitting transistors are disclosed based on the modulation of charge carrier injection from electrodes into light-emitting materials by applying external gate potential. This gate modulation were achieved in two disclosed methods: 1) a porous electrode allowing mobile ions to stabilize electrochemically doped semiconducting materials that can form ohmic contact with electrodes: 2) an electrode with gate-tunable work function such as Al:LiF composite electrodes.

A light emitting capacitor can include a first and second electrode, an electroluminescent layer, and at least one elastomeric layer. The electroluminescent layer, which can include an elastomeric material doped with semiconducting nanoparticles, can be disposed between the first and second electrodes. The elastomeric layer can encapsulate the first electrode, second electrode, and electroluminescent layer. The first and second electrodes can be hydrogel or conductive electrodes. The light emitting capacitor can provide dynamic coloration or sensory feedback. The light emitting capacitor can be used in, for example, robotics, wearables (displays, sensors, textiles), and fashion.

A method for manufacturing an organic device 10 according to an embodiment includes: a film forming step of continuously forming first to N-th layers (N is an integer of 2 or more) on a first electrode layer 14 formed on a main surface 12a of a flexible substrate while continuously conveying the flexible substrate 12, wherein in the film forming step, the first to N-th layers are sequentially formed on the first electrode layer by supplying materials of the first to N-th layers from first to N-th film forming sources to the flexible substrate through first to N-th shielding parts arranged between the first to N-th film forming sources and the flexible substrate, the first to N-th shielding parts are fixed in a conveyance direction of the flexible substrate in a state of being spaced apart from the flexible substrate, and a shielding area due to at least one shielding part of the first to N-th shielding parts is different from a shielding area due to other shielding part.

A manufacturing method for carbon nanotube composite film is disclosed. The method comprises steps of: providing a substrate; coating a first aqueous solution dissolved with a charged polymer on a substrate to form a polymer film; dispersing a single-wall carbon nanotube powder into a second aqueous solution dissolved with a charged compound in order to obtain a semiconductor-type single-wall carbon nanotube aqueous solution, and charge properties of the charged compound and the charged polymer are opposite; coating the semiconductor-type single-wall carbon nanotube aqueous solution on the polymer film; after standing for a predetermined period of time, washing with a deionized water to remove an unabsorbed semiconductor-type single-wall carbon nanotube and excess charged polymer; and air drying, forming a carbon nanotube film on the polymer film. A manufacturing method for carbon nanotube TFT and a carbon nanotube TFT are also disclosed. The carbon nanotubes can be well tiled onto the substrate.