Provided is a method of manufacturing an ultrasound probe. The method includes: preparing a backing layer having first and second surfaces with different heights due to forming a groove in the backing layer, wherein first and second electrodes are exposed on the first and second surfaces, respectively; forming a third electrode that is in contact with the first electrode; forming a base piezoelectric unit on the third electrode, the base piezoelectric unit including a piezoelectric layer; forming a piezoelectric unit by removing an upper region of the base piezoelectric unit; and forming a fourth electrode on the backing layer and the piezoelectric unit.

An integrated structure of a crystal resonator and a control circuit (110) and an integrated method therefor. Integration of the crystal resonator with the control circuit (110) is accomplished by forming, in a device wafer (100) containing the control circuit, a lower cavity (120) with an opening exposed at a back side of the device wafer (100), forming a piezoelectric vibrator (500) on the back side of the device wafer (100) and electrically connecting the piezoelectric vibrator (500) to the control circuit (110) in the device wafer (100) from the back side of the device wafer (100). The crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration.

Stack assembly for radio-frequency applications. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die.

Ultrasonic sensing approaches are described with integrated MEMS-CMOS implementations. Embodiments include ultrasonic sensor arrays for which PMUT structures of individual detector elements are at least partially integrated into the CMOS ASIC wafer. MEMS heating elements are integrated with the PMUT structures by integrating under the PMUT structures in the CMOS wafer and/or over the PMUT structures (e.g., in the protective layer). For example, embodiments can avoid wafer bonding and can reduce other post processing involved with conventional manufacturing of PMUT ultrasonic sensors, while also improving thermal response.

A wafer scale ultrasonic sensor assembly includes a wafer substrate, an ultrasonic element, first and second protective layers, conductive wires, a transmitting material, an ASIC, a conductive bump, and a soldering portion. The wafer substrate includes a via. The ultrasonic element is exposed to the via. The conductive wires are on the first protective layer and connected to the ultrasonic element. The second protective layer covers the conductive wires, and the second protective layer has an opening corresponding to the ultrasonic element. The transmitting material contacts the ultrasonic element. The ASIC is connected to the wafer substrate, so that the via forms a space between the ASIC and the ultrasonic element. The conductive pillar is in a via defined through the ASIC, the wafer substrate, and the first protective layer, and the conducive pillar is respectively connected to the conductive wires and the soldering portion.

A thin-profile ultrasonic sensor includes a piezoelectric material layer having a first surface and a second surface, a plurality of thin film transistors (TFTs) on the first surface, and an electrode layer on the second surface. The first surface and the second surface are on opposite sides facing away from each other. The piezoelectric material layer is configured as a substrate to support the plurality of TFTs, no other substrate being required. The piezoelectric material layer is configured to transmit and receive ultrasonic signals.

A vibration actuator includes an elastic body on which at least one projection is formed and a vibrating body including an electromechanical conversion device, and drives a driven member that is in contact with a contact portion of the projection by causing an end portion of the projection to perform an ellipsoidal movement in response to a combination of two vibration modes generated in the vibrating body when an alternating driving voltage is applied. The elastic body is formed integrally with the projection and a bonding portion between the projection and the electromechanical conversion device. A space is provided between the contact portion and the electromechanical conversion device to which the projection is bonded. The spring portion is provided between the bonding portion and the contact portion and causes the projection to exhibit a spring characteristic when the contact portion is pressed by the driven member.

Stack assembly having electro-acoustic device. In some embodiments, a radio-frequency (RF) module can include a packaging substrate configured to receive a plurality of components, and an electro-acoustic device mounted on the packaging substrate. The RF module can further include a die having an integrated circuit and mounted over the electro-acoustic device to form a stack assembly. The electro-acoustic device can be, for example, a filter device such as a surface acoustic wave filter. The die can be, for example an amplifier die such as a low-noise amplifier implemented on a silicon die.

Embodiments of the present disclosure provide a force touch display panel, a detection method thereof, and a display apparatus. The force touch display panel includes: a substrate; a display structure disposed in a display area on the substrate; and a force common electrode layer, a piezoelectric material layer, and a force sense electrode layer, which are stacked in sequence over the display structure. The force sense electrode layer includes a force sense electrode configured for identifying different forces, and the force sense electrode additionally serves as a touch detection electrode configured for identifying a touch operation.

Flex circuits and methods for ultrasound transducers are provided herein. In at least one embodiment, an ultrasound device includes a plurality of transducer elements and a flex circuit. The flex circuit includes an insulating layer having a first surface and a second surface opposite the first surface. A plurality of first conductive pads is included on the first surface of the insulating layer, and each of the first conductive pads is electrically coupled to a respective transducer element. A plurality of second conductive pads are included on the second surface of the insulating layer, and each of the second conductive pads is electrically coupled to a respective first conductive pad and the respective transducer element.